2SC4299
Abstract: No abstract text available
Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max
|
Original
|
PDF
|
2SC4299
FM100
100max
800min
50typ
2SC4299
|
2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max
|
Original
|
PDF
|
2SC3679
Pulse10)
100max
800min
75typ
700mA
MT-100
2SC3679
|
2SC4020
Abstract: 2SC4020 equivalent
Text: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VEBO 7 V V(BR)CEO 3(Pulse 6) A hFE IC µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat)
|
Original
|
PDF
|
2SC4020
100max
800min
MT-25
40typ
2SC4020
2SC4020 equivalent
|
Ib22
Abstract: No abstract text available
Text: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30 VEBO IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W
|
Original
|
PDF
|
2SC4020
100max
800min
40typ
MT-25
Ib22
|
2SC4304
Abstract: FM20 DSA0016509
Text: 2SC4304 Silicon NPN Triple Diffused Planar Transistor High Voltage High Speed Switchihg Transistor hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A
|
Original
|
PDF
|
2SC4304
800min
15typ
50typ
100mA
100max
O220F)
2SC4304
FM20
DSA0016509
|
2SC4445
Abstract: transistor case To 106
Text: 2SC4445 Application : Switching Regulator and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V BR CEO V 3(Pulse6) A hFE IC=10mA 800min VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 60(Tc=25°C) W VBE(sat)
|
Original
|
PDF
|
2SC4445
FM100
100max
800min
15typ
50typ
2SC4445
transistor case To 106
|
2SC4300
Abstract: No abstract text available
Text: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
|
Original
|
PDF
|
2SC4300
100max
800min
Pulse10)
75typ
FM100
2SC4300
|
2SC4299
Abstract: No abstract text available
Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max
|
Original
|
PDF
|
2SC4299
FM100
100max
800min
50typ
2SC4299
|
2SC4301
Abstract: No abstract text available
Text: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)
|
Original
|
PDF
|
2SC4301
FM100
100max
800min
Pulse14)
105typ
2SC4301
|
2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
|
Original
|
PDF
|
2SC3679
Pulse10)
100max
800min
75typ
MT-100
2SC3679
|
Untitled
Abstract: No abstract text available
Text: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2
|
Original
|
PDF
|
2SC4908
100max
800min
40typ
O220F)
|
2SC4300
Abstract: No abstract text available
Text: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
|
Original
|
PDF
|
2SC4300
100max
800min
Pulse10)
75typ
700mA
FM100
2SC4300
|
2SC4301
Abstract: No abstract text available
Text: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)
|
Original
|
PDF
|
2SC4301
FM100
100max
800min
Pulse14)
105typ
2SC4301
|
2SC4908
Abstract: FM20
Text: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions 2SC4908 Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2
|
Original
|
PDF
|
2SC4908
100max
800min
40typ
O220F)
2SC4908
FM20
|
|
|
2SC4304
Abstract: FM20
Text: 2SC4304 Silicon NPN Triple Diffused Planar Transistor High Voltage High Speed Switchihg Transistor hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A
|
Original
|
PDF
|
2SC4304
800min
15typ
50typ
100mA
100max
O220F)
2SC4304
FM20
|
2SC4445
Abstract: No abstract text available
Text: 2SC4445 Application : Switching Regulator and General Purpose Conditions 2SC4445 Unit V ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V BR CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max
|
Original
|
PDF
|
2SC4445
FM100
100max
800min
15typ
50typ
2SC4445
|
2SC3680
Abstract: No abstract text available
Text: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A
|
Original
|
PDF
|
2SC3680
100max
800min
Pulse14)
105typ
MT-100
2SC3680
|
Untitled
Abstract: No abstract text available
Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)
|
Original
|
PDF
|
2SC3678
100max
800min
50typ
MT-100
|
2SC3678
Abstract: No abstract text available
Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A
|
Original
|
PDF
|
2SC3678
100max
800min
50typ
400mA
500mA
MT-100
2SC3678
|
BEP-13-3110D
Abstract: BEP-7-316D BEP-17-318D FEP-17-C FEP-13-C BEP-20-8110D FEP-13 BEP-10-318D EP10 EP20
Text: Ferrite Cores EP Series For Power Supply and Signal Transformer EP Cores E Type EP7 EP10 EP13 EP17 EP20 A øC CORE SHAPES AND DIMENSIONS/CHARACTERISTICS 2D Dimensions mm A 9.2±0.2 11.5±0.3 12.5±0.3 18±0.4 24±0.5 øC 3.3±0.1 3.3±0.15 4.35±0.15 5.68±0.18
|
Original
|
PDF
|
PC40EP7-Z
H5AEP10-Z
H5C3EP10-Z
PC40EP10-Z
PC50EP10-Z
H5AEP13-Z
H5C3EP13-Z
PC40EP13-Z
PC50EP13-Z
H5AEP17-Z
BEP-13-3110D
BEP-7-316D
BEP-17-318D
FEP-17-C
FEP-13-C
BEP-20-8110D
FEP-13
BEP-10-318D
EP10
EP20
|
STK 407 - 040
Abstract: stk 407 070 LP 8029 m4 stk 407 090 LM 7804 STK 407 040 LM 7801 LP 8029 l2 9SMnPb28k makrolon 8030
Text: Miniatur-Abstandhalter Miniatur-Abstandhalter LPR 8000-Mini ff LPR 8001-70-Mini ff Miniature PCB Spacer r Selbstverriegelung wiederlösbar durch Zurückdrücken der Nase. Self-locking and releasable. r Montage: / Mounting: Bohrungen von 3,2 mm; max. 1,6 mm Materialstärke.
|
Original
|
PDF
|
8000-Mini
8001-70-Mini
8004-Mini
8005-Mini
8201-Mini
D-85640
STK 407 - 040
stk 407 070
LP 8029 m4
stk 407 090
LM 7804
STK 407 040
LM 7801
LP 8029 l2
9SMnPb28k
makrolon 8030
|
2SC5124
Abstract: No abstract text available
Text: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)
|
Original
|
PDF
|
2SC5124
Pulse20)
100mA
2SC5124
|
gps 680
Abstract: No abstract text available
Text: TEM MODE RESONATOR SILVER PLATED m u R a ta DRR Series FEATURES • High Q ■ IR Reflowable ■ Surface Mountable APPLICATIONS ■ Radio telephone VCO ■ Measuring Instruments OSC ■ G.P.S. or Geostar OSC ■ HDTV tuner OSC PART NUMBERING SYSTEM [ ORR I
|
OCR Scan
|
PDF
|
2R330
1R180
10MHz
17/fo
33/fo
360min
1990MHz)
400min
2700MHz)
480min
gps 680
|
Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE J> • 7cnG741 QQQQTflR 37T * S A K J Silicon NPN Triple Diffused Planar ☆High Voltage Switching Transistor 2SC4299 Application Example : e Outline Drawing 5 . . F M I 0 0 Sw itch in g R eg u lator and G e n e ra l P u rp o se
|
OCR Scan
|
PDF
|
nG741
2SC4299
800min
45x01
T0220)
|