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    801R4BN

    Abstract: 801R2BN APT801R2BN
    Text: o ADVANCED POW ER Te c h n o l o g y D Ô S POWER MOS IV® 801R2BN APT751R2BN APT801R4BN APT751R4BN 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


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    APT801R2BN APT751R2BN APT801R4BN APT751R4BN 801R2BN 751R4BN 751R2BN 801R4BN APT801R2/751R2/801R4/751R4BN 801R4BN APT801R2BN PDF

    801R2BN

    Abstract: APT801R2BN
    Text: A dvanced POW ER Te c h n o l o g y O D Ô 801R2BN APT751R2BN APT801R4BN APT751R4BN s ü í ’W tR MOS 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20í> 1.20Q 1.400 1.40<> N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Ail Ratings: T c = 25 C unless otherwise specified.


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    APT801R2BN APT751R2BN APT801R4BN APT751R4BN 751R2BN 801R2BN 751R4BN 801R4BN APT801R 2/751R2/801R4/751R4BN PDF