LDM_0808_300M_91
Abstract: No abstract text available
Text: LDM-0808-300m-91 TECHNICAL DATA High Power Infrared Laser Diode Features • CW Output Power: 300 mW • Typical 808 nm Emission Wavelength • High-efficiency Quantum Well Structure • TO5 Package Applications • Solid-state Laser Pumping • Medical Usage
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LDM-0808-300m-91
LDM_0808_300M_91
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808nm 500mw
Abstract: ADL-80V03TL 80V03
Text: ADL-80V03TL Infrared Laser Diode 6-2D-LD80-010_Rev.00 808nm 500mW High Power Operation • Features 1. Low operation current 2. High pumping efficiency 3. Stable wavelength 4. High reliability • Applications 1. Pumping source for DPSS green laser 2. Medical applications
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ADL-80V03TL
6-2D-LD80-010
808nm
500mW
divers-vis/ari/808nm/
adl-80v03tl
808nm 500mw
80V03
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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Laser Diode 808 2 pin 1000 mw
Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Text: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm
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Untitled
Abstract: No abstract text available
Text: ADL-80Y04TZ Infrared Laser Diode 6-2D-LD80-001_Rev.00 808nm 200mW High Power Operation • Features 1. Low threshold current 2. Low operation current 3. High pumping efficiency 4. Stable wavelength 5. High reliability • Applications 1. Pumping source for DPSS green laser
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ADL-80Y04TZ
6-2D-LD80-001
808nm
200mW
divers-vis/ari/808nm/
adl-80y04tz
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808 nm 1000 mw
Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323V
SLD323V
SLD300
structur00
M-248
LO-11)
808 nm 1000 mw
1000mW laser diode
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-25
SLD323V-3
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Laser-Diode 808
Abstract: RLT80810G 808 nm 300 mW LD
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 +/- 3 nm typ., singlemode
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RLT80810G
Laser-Diode 808
RLT80810G
808 nm 300 mW LD
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 808nm Single Fiber Output Dual-Wavelength Laser Diodes BLD-81-tt-2W-14-F-f-c-l-22 BLD-81-tt-4W-14-F-f-c-l-22 BLD-81-tt-5W-14-F-f-c-l-22 BLD-81-tt-8W-14-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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808nm
BLD-81-tt-2W-14-F-f-c-l-22
BLD-81-tt-4W-14-F-f-c-l-22
BLD-81-tt-5W-14-F-f-c-l-22
BLD-81-tt-8W-14-F-f-c-l-22
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808 nm 100 mw
Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.
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SLD323V
SLD323V
SLD300
M-248
LO-11)
808 nm 100 mw
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-3
1000mW laser diode
808 nm 1000 mw
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SLD300
Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.
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SLD323XT
SLD323XT
SLD300
M-273
LO-10)
65MAX
M-273
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-3
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808nm 300mW
Abstract: No abstract text available
Text: ADL-80X01TZ Infrared Laser Diode 6-2D-LD80-002_Rev.01 808nm 300mW High Power Operation • Features 1. Low threshold current 2. Low operation current 3. High pumping efficiency 4. Stable wavelength 5. High reliability • Applications 1. Pumping source for DPSS green laser
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ADL-80X01TZ
6-2D-LD80-002
808nm
300mW
divers-vis/ari/808nm/
adl-80x01tz
808nm 300mW
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Untitled
Abstract: No abstract text available
Text: rev.1.0 16.03.2015 S8081WG Description S8081WG is a infrared laser diode emitting at typically 808 nm with rated output power of 1 W cw, in a standard 9 mm TO package with flat window cap. Maximum Ratings T CASE = 25°C Parameter Symbol Values Unit Output power
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S8081WG
S8081WG
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Untitled
Abstract: No abstract text available
Text: ADL-80V03TZ Infrared Laser Diode 6-2D-LD80-008_Rev.00 808nm 500mW High Power Operation • Features 1. Lowest operation current 2. High pumping efficiency 3. Stable wavelength 4. High reliability • Applications 1. Pumping source for DPSS green laser 2. Medical applications
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ADL-80V03TZ
6-2D-LD80-008
808nm
500mW
divers-vis/ari/808nm/
adl-80v03tz
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Untitled
Abstract: No abstract text available
Text: AlGaAs Infrared Laser Diode ADL-80Y01TL DATE：2007/03/12 Ver 2.0 808nm 200mW High Power Operation • Features 1. Stable wavelength 2. Low operation current 3. High reliability • Applications 1. Pumping source for DPSS green laser 2. Medical applications
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ADL-80Y01TL
808nm
200mW
divers-vis/ari/808nm/
adl-80y01tl
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Untitled
Abstract: No abstract text available
Text: ADL-80Q11CZ AlGaAs Infrared Laser Diode DATE：2008/09/08 Ver 1.0 ★808nm 1W C-Mount PKG • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity Cathode tab (-) Alumina Insulator
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ADL-80Q11CZ
808nm
divers-vis/ari/808nm/
adl-80q11cz
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IR-Laser-Diode 808nm
Abstract: 808nm laser diode IR-Laser-Diode 808nm 8018 electrical symbols diode TO-18 package TO18 Laser 808nm TO18 Laser 808nm 300 mw
Text: 8018-4200-00 Specifications Device Package Type 808nm 180mW IR Laser Diodes 1.Common Laser Diode TO-18 φ5.6mm TO-5(φ9.0mm) 50um Aperture Broad Area •Absolute Maximum Ratings(Tc=25℃) Characteristics Symbols Optical Output Po Reverse Voltage Laser Vr
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808nm
180mW
180mW
100mW
150mW
IR-Laser-Diode 808nm
808nm laser diode
IR-Laser-Diode
8018
electrical symbols
diode TO-18 package
TO18 Laser 808nm
TO18 Laser 808nm 300 mw
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Untitled
Abstract: No abstract text available
Text: 808nm Single Fiber Output Dual-Wavelength Diode Lasers K81D15F-2.00W K81D15F-4.00W K81D15F-5.00W K81D15F-8.00W Key Features： 2-8W output power 105µm, 200µm or 400µm fiber core diameter 0.22NA 808nm wavelength 650nm aiming beam Applications：
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808nm
K81D15F-2
K81D15F-4
K81D15F-5
K81D15F-8
650nm
/bwt/808nm/k81d15f
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650nm 5mw laser
Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Text: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
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1550nm
650nm 5mw laser
ird300
laser range finder schematics
500mW 808nm infrared laser diode driver circuit
650nm laser diode 200mw
circuit diagram of radar range finder
LD-808-500G
t15f-xyz-wm
LD-808-1000G
LD-650-5A
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H10769A
Abstract: H10770A H7422
Text: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS
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S11510
R9876,
R11540
photomultiD-82211
DE128228814
H10769A
H10770A
H7422
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Untitled
Abstract: No abstract text available
Text: PHOTON FAIR 2013開催 03 創立60周年を記念して11月7・8・9日の3日間、 浜松ホトニクス総合展示会「PHOTON FAIR （フォトンフェア）2013」を開催します。 Vol. 03ページ 2 ホットニュース 05 EM-CCDカメラを凌駕する科学計測用CMOSカメラ
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808nm laser
Abstract: 808nm 500mw 808nm 500mW laser diode 9mm
Text: LUMEX laser diodes 808nm OED-LDH8004F OED-LDH8005F Features • • • • Visible lig h t: X - 808 nm Typ. Output power: 200mW/500mW, CW High Efficiency MOCVD Quantum Well Design Standard TO-5 package (9mm 0 ) Applications • Diode pump solid state laser
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808nm
OED-LDH8004F
OED-LDH8005F
200mW/500mW,
OED-LDH8004F
OED-LDH8005F
200mW
808nm laser
808nm 500mw
808nm 500mW laser diode 9mm
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taser circuit
Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
Text: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness
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SLD323XT
SLD323XT
SLD300
600mW
800mV
taser circuit
808 nm 100 mw
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-25
SLD323XT-3
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TM General Description Features The NMC27C16B is a high perform ance 16K UV erasable and electrically reprogram m able CM OS EPROM, ideally suited for applications w here fast turnaround, pattern experim entation and low power consum ption are im portant requirements.
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NMC27C16B
NMC27C16B
384-Bit
24-pin
C27C16B
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mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
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