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    80N50 MOSFET Search Results

    80N50 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    80N50 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80n50

    Abstract: 80N50 MOSFET
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50 227TM 728B1 80n50 80N50 MOSFET

    80n50

    Abstract: 80N50 MOSFET 125OC IXFN80N50
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50 100kHz 125OC 80n50 80N50 MOSFET 125OC IXFN80N50

    80N50 MOSFET

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 75N50 75N50 80N50 OT-227 E153432 125OC 728B1 80N50 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 227TM IXFN80N50 728B1

    IXFN80N50

    Abstract: 80n50 80N50 MOSFET IXYS IXFN80N50
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 227TM IXFN80N50 728B1 80n50 80N50 MOSFET IXYS IXFN80N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500


    Original     		PDF 80N50 OT-227 E153432

    80N50D

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 = 500 V = 80 A = 48 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 OT-227 E153432 80N50D

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 227TM 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 VDSS ID25 = 500 V = 80 A Ω = 50 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50 OT-227 E153432 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50 100kHz 125OC

    80n50

    Abstract: 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 75N50 OT-227 E153432 125OC 728B1 80n50 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80

    80N50 MOSFET

    Abstract: 80N50 75N50 SNC80
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 75N50 OT-227 E153432 728B1 80N50 MOSFET 80N50 75N50 SNC80

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    80N50

    Abstract: No abstract text available
    Text: nixYs Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 80N50 V DSS 500 V 80 A 48 mQ I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS Tj =25°C to150°C 500 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2


    OCR Scan     		PDF IXFN80N50 to150 OT-227 E153432 80N50