24501BVA
Abstract: 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9 HM-6504
Text: HM-6504 TM 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and
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HM-6504
HM-6504
35mW/MHz
24501BVA
8102403VA
8102405VA
810240IVA
HM1-6504-9
HM1-6504B-9
HM1-6504S-9
HM3-6504-9
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qml-38535
Abstract: M38510-24502BVA as 15-f HM1-6514S8
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. 67268. 1987 OCT 23 M. A. Frye
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M38510
qml-38535
M38510-24502BVA
as 15-f
HM1-6514S8
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6504
Abstract: HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9
Text: HM-6504 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low
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HM-6504
HM-6504
35mW/MHz
6504
HM1-6504-9
HM3-6504-9
6504-9
24501BVA
8102403VA
8102405VA
810240IVA
HM1-6504B-9
HM1-6504S-9
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HM3-6504-9
Abstract: HM-6504 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 6504
Text: HM-6504 S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes
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HM-6504
HM-6504
35mW/MHz
HM3-6504-9
24501BVA
8102403VA
8102405VA
810240IVA
HM1-6504-9
HM1-6504B-9
HM1-6504S-9
6504
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5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
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MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
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HM1-6504-9
Abstract: HM3-6504-9 HM4-6504-9 HM-6504 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9
Text: HM-6504 HARRIS æ S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power S tan db y. 125|aW Max • Low Power O p e ra tio n . 35mW /MHz Max • Data R e te n tio n . at 2.0V Min
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HM-6504
35mW/MHz
120/200ns
HM-6504
HM1-6504-9
HM3-6504-9
HM4-6504-9
HM-6504-9
8102405VA
810240IVA
HM1-6504B-9
HM1-6504S-9
HM-6504S-9
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6504
Abstract: 6132 RAM
Text: HM-6504 HARRIS S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. 125|iW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes
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HM-6504
HM-6504
6504
6132 RAM
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6132 RAM
Abstract: No abstract text available
Text: HM-6504 fü HARRIS S E M I C O N D U C T O R 4096 x 1 C M O S RAM August 1996 Features Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low
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HM-6504
HM-6504
6132 RAM
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6132 RAM
Abstract: HM-6504-9
Text: HM-6504 S e m iconductor 4096 x 1 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max Low Power O p eratio n . 35mW/MHz Max Data 2.0V Min
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HM-6504
HM-6504
6132 RAM
HM-6504-9
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6504-9
Abstract: HM1-6504-9 6504-8
Text: HM-6504 ff! HARRIS S E MI C O N D U C T O R 4096 February 1992 X 1 CMOS RAM Features Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low
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HM-6504
HM-6504
6504-9
HM1-6504-9
6504-8
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 4bE D • 4302271 OOB^lOM 3 « H A S HM-6504 “ T -M -fe -Z 5 -0 5 4096 February 1992 X 1 CMOS RAM Features Description • Low Power Standby. 125|iW Max. The HM-6504 is a 4096 x 1 static CMOS RAM fabricated
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HM-6504
35mW/MHzMax.
120/200ns
HM-6504
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Untitled
Abstract: No abstract text available
Text: a HM-6504 HARRIS S E M I C O N D U C T O R 4096 X 1 CMOS RAM August 1996 Features Description • Low Power Standby. 125|iW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes
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HM-6504
HM-6504
35mW/MHz
a22fl
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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