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    836 ZENER DIODE Search Results

    836 ZENER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    836 ZENER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DVP-40EH

    Abstract: asda-a2 DVP40EH DVP-32EH dvp 32eh manual wplsoft application DVP-20 DVP32EH00M2 dvp 40eh DVP40EH2
    Text: 2009-06-15 5011668901-EH21 DVP-1070030-02 ΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞ ƒ ENGLISH ƒ ΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞΞ a This Instruction Sheet only provides descriptions for electrical specifications, general specifications, installation & wiring. Other detail infromation about programming and


    Original     		PDF 5011668901-EH21 DVP-1070030-02 DVP16/20/32/48/64/80EH2 DVP40/60EH2 24VDC DVP32EH00M2 DVP-40EH asda-a2 DVP40EH DVP-32EH dvp 32eh manual wplsoft application DVP-20 DVP32EH00M2 dvp 40eh DVP40EH2

    Untitled

    Abstract: No abstract text available
    Text: TH09/2479 TH97/2478 P6KExxC SERIES IATF 0113686 SGS TH07/1033 BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR DO-15 VBR : 6.8 - 600 Volts PPK : 600 Watts 1.00 25.4 MIN. 0.142 (3.6) 0.102 (2.6) FEATURES : * * * * * Glass passivated jungtion chip 600W surge capability at 1ms


    Original     		PDF TH09/2479 TH97/2478 TH07/1033 DO-15 DO-15 UL94V-0 10X1000

    Untitled

    Abstract: No abstract text available
    Text: TH09/2479 TH97/2478 P6KE SERIES IATF 0113686 SGS TH07/1033 TRANSIENT VOLTAGE SUPPRESSOR DO-15 VBR : 6.8 - 600 Volts PPK : 600 Watts 1.00 25.4 MIN. 0.142 (3.6) 0.102 (2.6) FEATURES : * * * * * Glass passivated jungtion chip 600W surge capability at 1ms Excellent clamping capability


    Original     		PDF TH09/2479 TH97/2478 TH07/1033 DO-15 DO-15 UL94V-0 MIL-STD-202, 10X1000 50mVp-p

    1N9708

    Abstract: 1N9618 1N9848 1N9578 1N9768 1N9838 1N96B 1N9928 IN991B 27 513 zener diode
    Text: 1N957B, . / thru M ierosemi Corp. £ The a>ode experts S C O TTSD ALE. A Z 1N992B, -1 DO-35 F o r m o r e i n f o r m a ti o n cali: 6 0 2 941-6300 SILICON 500 mW ZENER DIODES FEATURES • 6.8 TO 200 V ZENER VOLTAGE RANGE • 1N962B-1 THRU 1N992B-1 AVAILABLE IN JAN, JA N TX AND JA N TXV QUALIFICATIONS


    OCR Scan     		PDF 1N962B-1 1N992B-1 MIL-S-19500/117. 1N957B, 1N992B, DO-35 500mW 1N9708 1N9618 1N9848 1N9578 1N9768 1N9838 1N96B 1N9928 IN991B 27 513 zener diode

    Untitled

    Abstract: No abstract text available
    Text: MLL5913 thru MLL5956 Microsemi Corp. ? A-IV/I tub ftotiti experts 1V4 f t SCO rrSD ALE , 4 / h>i im*ie information call (61 2) 941-6300 D E S C R IP T IO N / F E A T U R E S LEADLESS GLASS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING


    OCR Scan     		PDF MLL5913 MLL5956

    Untitled

    Abstract: No abstract text available
    Text: ESE D M I C R O S E M I CORP t l l S ñ h S OOGDTTfl b 1N5063 - 1N5117 MZ806 - MZ890, MZ 2 1 0 -M Z 240 MierasemiCarp. ' Ttwí&jetxpttts SANTA ANA, CA SCOTTSDALE. AZ Foe more information calk 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • •


    OCR Scan     		PDF 1N5063 1N5117 MZ806 MZ890, MZ21T MZ111J. 1N5117, 806-M

    Z808

    Abstract: Z226 ANA 608 MZ210 1N5105 marking 1n diode MZ80 845MZ Zener 224 Z860
    Text: 1N 5063 - 1N5117 M Z 806 - M Z 890, MZ 210 • MZ 2 4 0 Mierosem i Corp. diode experts SANTA ANA, CA SCOTTSDALE, A Z / For m ore inform ation call: 714 979-8220 3-WATT G USS ZENER DIODES FE A TU R E S • • • • • • • Microminiature package.


    OCR Scan     		PDF 1N5117 P-16J MZ806 MZ211 MZ111) 1N5117, Z808 Z226 ANA 608 MZ210 1N5105 marking 1n diode MZ80 845MZ Zener 224 Z860

    IN3046

    Abstract: 1N3016 1N3040 1N3029B 1N3042 1n3029
    Text: f Z 7 SGSTHOMSON ^ 7# [ M » i L i O T ( « ( 5S 1 N 3 0 1 6 B -> 1N 3051 B ZENER DIODES • VOLTAGE RANGE : 6.8V TO 200V ■ WELDED, HERMETICALLY SEALED METAL CASE ■ PACKAGE ACCORDING TO NORMALIZATION CCTU : F61 AND JEDEC DO-13 DESCRIPTIO N 1W silicon Zener diodes.


    OCR Scan     		PDF DO-13 IN3046 1N3016 1N3040 1N3029B 1N3042 1n3029

    gaa 816

    Abstract: No abstract text available
    Text: M Z 5 8 0 6 thru M Z5891 and M Z5210 thru M Z5240 MicrosemiCorp. ' The choóe e x p e lís SANTA ANA, CA For more information call: 714 979-8220 FEATURES GLASS ZENER DIODES • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION


    OCR Scan     		PDF Z5891 Z5210 Z5240 MZ5806 MZ5891, MZ5210 MZ5240 gaa 816

    zener diode marking E7

    Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 zener diode marking E7 diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99

    Untitled

    Abstract: No abstract text available
    Text: • f l2 3 5 b 0 5 00^ 13117 5 0 3 S I E M E N S _ ■ PROFET BTS711 L1 Smart Four Channel Highside Power Switch Features • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection


    OCR Scan     		PDF BTS711 A23Sb05 P-DSQ-20-9 BTS711L1 Q67060-S7006-A2 23SbO

    FMMD6050

    Abstract: Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47
    Text: FERRANTI 4 semiconductors FMMD6050 • High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMD6050 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A FMMD6050 Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47

    FMMD6050

    Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
    Text: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAL99 OT-23 BAL99 C9/C20 50MHz ZC830A ZC831A ZC832A FMMD6050 E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAS16 SOT diode marking Z3 BAV74

    colour code diode zener

    Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
    Text: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid


    OCR Scan     		PDF OT-23 C9/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A colour code diode zener BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


    OCR Scan     		PDF OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70

    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF BAS16 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A 5D marking DIODE BAS16 Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23

    Diode Marking z3 SOT-23

    Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
    Text: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


    OCR Scan     		PDF ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A Diode Marking z3 SOT-23 dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99

    NDB4060

    Abstract: NDP4060
    Text: July 1996 Nationa I Semiconductor " NDP4060/ NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP4060/NDB4060 bSD113G 0G4053Ã bS01130 004053R NDB4060 NDP4060

    BTS712-N1 equivalent

    Abstract: No abstract text available
    Text: SIEMENS PROFET BTS 711 L1 Smart Four Channel Highside Power Switch Product Summary Features • • • • • • • • • • • • • O verlo ad protection C u rren t limitation Short-circuit protection Th erm al shutdow n O vervoltage protection


    OCR Scan     		PDF BTS711 T3TBTT31T BTS712-N1 equivalent

    Zener Diode Glass 50v

    Abstract: WORKING PRINCIPLE IR SENSOR
    Text: F A IR C H IL D s e m ic o n d u c t o r w w w .f a ir c h ild s e m i.c o m FAN8903 KA3903 Power Window Motor Control 1C Features Description • Protections - Human body protection with a sim ple switch - Over current protection with an integrator - Over voltage protection


    OCR Scan     		PDF FAN8903 KA3903) 16-DIP-300A 200ms. Zener Diode Glass 50v WORKING PRINCIPLE IR SENSOR

    MARKING YA SOT-23

    Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
    Text: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim


    OCR Scan     		PDF BAW56 OT-23 BAW56 C9/C20 50MHz ZC830A ZC831A ZC832A MARKING YA SOT-23 w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16

    BAV99 Zener diode

    Abstract: Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74
    Text: FERRANTI semiconductors BAV99 Hi gh Speed S w i t c h i n g Series D io de Pair DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAV99 OT-23 BAV99 C9/C20 50MHz ZC830A ZC831A ZC832A BAV99 Zener diode Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74

    tc9157

    Abstract: potentiometer 1m preset, horizontal pin diagram of potentiometer 1m preset, horizontal
    Text: WTELEDYNE COMPONENTS TC915 HIGH-VOLTAGE, AUTO-ZEROED OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC915 is a high-voltage, high-performance CMOS, chopper-stabilized operational amplifier. It can operate from the same ±15V power supplies commonly used to power


    OCR Scan     		PDF TC915 ICL7650 tc9157 potentiometer 1m preset, horizontal pin diagram of potentiometer 1m preset, horizontal