HDMP-1636
Abstract: HFBR-0535 E121562 HFBR-5303 HFBR-5305 HFBR-5315 HFCT-5305 R3829
Text: Gb/s Gigabit Ethernet: 1.25 GBd 850 nm VCSEL Transceiver in Low Cost 1x9 Package Style Preliminary Technical Data Features Applications • Compliant with Proposed Specifications for IEEE802.3z/D2 Gigabit Ethernet (1000Base-SX) • 850 nm Vertical Cavity
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IEEE802
1000Base-SX)
HFBR-5305
HDMP-1636
HFBR-0535
E121562
HFBR-5303
HFBR-5305
HFBR-5315
HFCT-5305
R3829
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21CFR1040
Abstract: mtrj vcsel receiver MT-RJ transceiver 21CFR1040.1
Text: 3.3V MTRJ Transceiver For Gigabit Ethernet 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EM125-M3yz EM125-M3Tz Preliminary Data Sheet The transmitter consists of a high-performance 850-nm VCSEL and the receiver consists of an integrated GaAs PINpreamplifier.
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EM125-M3yz
EM125-M3Tz
850-nm
EM125-M3
EN55022
21CFR1040
mtrj
vcsel receiver
MT-RJ transceiver
21CFR1040.1
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VF-45
Abstract: VF-45TM
Text: 3.3V VF-45TM Transceiver for Fibre Channel & 1000Base-SX 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EMxxx-V3TA Preliminary Data Sheet The transmitter consists of a high-performance 850-nm VCSEL while the receiver consists of a GaAs PIN and a
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VF-45TM
1000Base-SX
850-nm
EN55022
VF-45
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E2O Communications
Abstract: No abstract text available
Text: 3.3V LC Small Form-Factor Transceiver 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EM125-L3Tz EM125-L3Tz Preliminary Data Sheet The transmitter consists of a high-performance 850-nm VCSEL and the receiver consists of a GaAs PIN and a preamplifier.
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EM125-L3Tz
850-nm
EM125-L3
EN55022
E2O Communications
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1000base-sx
Abstract: mtrj
Text: 3.3V SFF MTRJ Transceiver for Fibre Channel & 1000Base-SX 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. The transmitter consists of a high-performance 850-nm VCSEL while the receiver consists of a GaAs PIN and a preamplifier. EMxxx-M3Tz Data Sheet
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1000Base-SX
850-nm
EN55022
1000base-sx
mtrj
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VF-45TM
Abstract: 1000base-sx VF-45
Text: 3.3V VF-45TM Transceiver for Fibre Channel & 1000Base-SX 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EMxxx-V3TA Preliminary Data Sheet The transmitter consists of a high-performance 850-nm VCSEL while the receiver consists of a GaAs PIN and a
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VF-45TM
1000Base-SX
850-nm
EN55022
VF-45
1000base-sx
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HFBR-1712TZ
Abstract: No abstract text available
Text: HFBR-1712TZ High Performance 850 nm Transmitter for extended link length applications with ST connector Data Sheet Description Features The high performance miniature 850 nm VCSEL transmitter from Avago Technologies is designed to meet the longer link length requirement for Industrial Control
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HFBR-1712TZ
HFBR-1414
AV02-0043EN
HFBR-1712TZ
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GMOY6074
Abstract: VCSEL die
Text: GaAs-IR-VCSEL-Chip 850 nm GaAs Infrared VCSEL Die (850 nm) F 496A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • • • • • • • • • • • • Technologie basierend auf selektiver Oxidation Datenrate 1,25 Gbit/s Oberflächenstrahler
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850nm
GMOY6074
VCSEL die
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L9279-14
Abstract: SE-171
Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet
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L9279-14
25phone:
SE-171
KLED1042E03
L9279-14
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Untitled
Abstract: No abstract text available
Text: 3.3V SFF LC Transceiver for Fibre Channel & 1000Base-SX 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. All are packaged together with a top metal cover and bottom shield. The transmitter consists of a highperformance 850-nm VCSEL while the receiver consists
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1000Base-SX
850-nm
EN55022
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Untitled
Abstract: No abstract text available
Text: 3.3V SFF LC Transceiver for Dual Rate Fibre Channel 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. receiver, and an electrical subassembly. All are housed within a plastic/metal package. The transmitter consists of a high-performance 850-nm VCSEL while the receiver
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850-nm
EM212-L3
EM212-L3Tz
EN55022
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Untitled
Abstract: No abstract text available
Text: VCSEL OPTOELECTRONIC/TRANSMITTERS VOICE/DATA Typical Drive Current mA Fibre (Core/Cladding) Total Optical Power (mW) Minimum Fiber-Coupled Optical Power into 5O G (mW) ZL60001 850 3100 7 50, 62.5/125 µm 3.5 0.7 ZL60002 850 3100 7 50, 62.5/125 µm 1.3 0.5
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ZL60001
ZL60002
ZL60005
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Untitled
Abstract: No abstract text available
Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet
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L9279-14
SE-171
KLED1042E03
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Untitled
Abstract: No abstract text available
Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet
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L9279-14
SE-171
KLED1042E04
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EM250-GDTA
Abstract: No abstract text available
Text: TM 3.3V / 5V GBIC Transceiver for InfiniBand 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. The transmitter consists of a high-performance 850-nm VCSEL while the receiver consists of a GaAs PIN and a preamplifier. At the same time, a serial EEPROM in the
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850-nm
EM250-GDTA
EM250-GDTA
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2x5 SFF evaluation board
Abstract: infiniband
Text: TM 3.3V SFF LC Transceiver for InfiniBand 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. and an electrical subassembly. All are housed within a plastic/metal package. The transmitter consists of a high-performance 850-nm VCSEL while the receiver consists of a GaAs PIN and
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850-nm
EM250-L3
EM250-L3Tz
EN55022
2x5 SFF evaluation board
infiniband
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TO18 package
Abstract: VCSEL Reflective Optical Sensor design opto interrupter GaAs 850 nm Infrared Emitting Diode TO18 ir diode VCSEL die bonding wavelength selective switch GMOY6074 OHF01182 Reflective Optical Sensor
Text: GaAs-Infrarot-VCSEL-Chip 850 nm GaAs Infrared VCSEL Chip (850 nm) F 0496A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • • • • • • • • • • • • Technologie basierend auf selektiver Oxidation Sehr hohe Datenrate (GBit/s) möglich
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850nm
TO18 package
VCSEL Reflective Optical Sensor
design opto interrupter
GaAs 850 nm Infrared Emitting Diode
TO18 ir diode
VCSEL die bonding
wavelength selective switch
GMOY6074
OHF01182
Reflective Optical Sensor
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1000base-sx
Abstract: No abstract text available
Text: 3.3V SFF LC Transceiver for Fibre Channel & 1000Base-SX 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EMxxx-L3Tz Data Sheet All are packaged together with a top metal cover and bottom shield. The transmitter consists of a highperformance 850-nm VCSEL while the receiver consists
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1000Base-SX
850-nm
EN55022
cus39]
1000base-sx
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1000base-sx
Abstract: No abstract text available
Text: 3.3V SFF LC Transceiver for Fibre Channel & 1000Base-SX 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. subassembly. All are housed within a plastic/metal package. The transmitter consists of a high-performance 850-nm VCSEL while the receiver consists of a GaAs PIN and
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1000Base-SX
850-nm
EN55022
custom39]
1000base-sx
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E2O Communications
Abstract: SFF EVALUATION BOARD 2x5 SFF evaluation board
Text: 3.3V SFF LC Transceiver for InfiniBand TM 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EM250-L3Tz Data Sheet All are packaged together with a top metal cover and bottom shield. The transmitter consists of a highperformance 850-nm VCSEL while the receiver consists of
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EM250-L3Tz
850-nm
EM250-L3
EN55022
mana39]
E2O Communications
SFF EVALUATION BOARD
2x5 SFF evaluation board
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VCSEL Reflective Optical Sensor
Abstract: No abstract text available
Text: GaAs-Infrarot-VCSEL-Chip 850 nm GaAs Infrared VCSEL Chip (850 nm) F 0496A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • • • • • • • • • • • • Technologie basierend auf selektiver Oxidation Sehr hohe Datenrate (GBit/s) möglich
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850nm
VCSEL Reflective Optical Sensor
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VCSEL die bonding
Abstract: DP thermocompression photodetector 850 nm VCSEL die LV1001-TO DV1001-A LV1001-A TO46
Text: LV1001-A 10 Gb/s, 850 nm VCSEL March 2002 Advanced Product Specifications FEATURES • • • • • 850 nm wavelength High Data Rate operation at 10 Gb/s with matched driver Single longitudinal mode operation >2.5 mW CW operation Operating temperature from 0~70°C
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LV1001-A
850nm
LV1001-A
AN1001-A)
VCSEL die bonding
DP thermocompression
photodetector 850 nm
VCSEL die
LV1001-TO
DV1001-A
TO46
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PLRXPL-VC-S43-23-N
Abstract: 10G OSA GR-468 IEC60825-1 RIN12OMA SFF-8431 10G SFP
Text: COMMUNICATIONS MODULES & SUBSYSTEMS 10 G SFP+ 850 nm Limiting Transceiver, 10 Gigabit Ethernet Compatible PLRXPL-Vx-S43-23-N Series Key Features • Compatible with 10 G links • Uses a highly reliable, 850 nm oxide VCSEL • Lead-free and RoHS 6/6-compliant, with allowed exemptions
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PLRXPL-Vx-S43-23-N
1-800-498-JDSU
800-5378-JDSU
PLRXPL-VC-S43-23-N
498-JDSU
5378-JDSU
PLRXPL-VC-S43-23-N
10G OSA
GR-468
IEC60825-1
RIN12OMA
SFF-8431
10G SFP
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Untitled
Abstract: No abstract text available
Text: Selection Guide - Vertical Cavity Surface Emitting Laser VCSEL Package Style X Part Number (nm) Beam Angle Total (Deg.) Power Output @ |F Typ Units (mA) Page No. SV2637-001 850 4 1.25 mW 10 64 SV5637-001 850 2 1.25 mW 10 68 SMV2637-001 850 6 1.25 mW 10 72
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SV2637-001
SV5637-001
SMV2637-001
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