SPRU132B
Abstract: No abstract text available
Text: SMQ320C32 DIGITAL SIGNAL PROCESSOR SGUS027B – APRIL 1998 – REVISED MARCH 1999 D D D D D D D D D D D Military Operating Temperature Range – 55°C to 125°C; QML Processing High-Performance Floating-Point Digital Signal Processor DSP SMQ320C32-50 (5 V)
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SMQ320C32
SGUS027B
SMQ320C32-50
40-ns
SMQ320C32-60
33-ns
32-Bit
40-Bit
SPRU132B
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Socket S1g1
Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Text: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,
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FC-135 32.7680KA-A0
Abstract: FC-135 32.7680KA FC-135 32,7680KA half bridge converter 2kw FC-135 32,7680KA-a0 BAT54SWTI br 8772 sdc 802 diode 32.7680ka-a0
Text: AD S1 258 ADS1258-EP SBAS445D – MARCH 2009 – REVISED MARCH 2011 www.ti.com 16-CHANNEL, 24-BIT ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS1258-EP FEATURES 1 • • • • • • • • • • 23 • • • • • • • • 24 Bits, No Missing Codes
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ADS1258-EP
SBAS445D
16-CHANNEL,
24-BIT
42-mW
FC-135 32.7680KA-A0
FC-135 32.7680KA
FC-135 32,7680KA
half bridge converter 2kw
FC-135 32,7680KA-a0
BAT54SWTI
br 8772
sdc 802 diode
32.7680ka-a0
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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S 3590A
Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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1664t
Abstract: AT52BR1662T AT52BR1664T tba 790
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
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16-megabit
11/01/xM
1664t
AT52BR1662T
AT52BR1664T
tba 790
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ECS-327-12
Abstract: No abstract text available
Text: AD S1 258 ADS1258-EP SBAS445D – MARCH 2009 – REVISED MARCH 2011 www.ti.com 16-CHANNEL, 24-BIT ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS1258-EP FEATURES 1 • • • • • • • • • • 23 • • • • • • • • 24 Bits, No Missing Codes
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ADS1258-EP
SBAS445D
16-CHANNEL,
24-BIT
42-mW
ECS-327-12
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3582B
Abstract: AT49BV322D AT49BV322DT AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3582B
AT49BV322D
AT49BV322DT
AT49BV
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circuit card assy input filter for miller 200 Dx
Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Text: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper
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TMS320C3x
SPRU194
TMS320C3x
circuit card assy input filter for miller 200 Dx
64 point radix 2 FFT
LM318 list
DSP101
74AS20 TTL
radix-4 DIT FFT C code
TLC32040C
TMS320
TMS320C31
TMS320C32
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MD 202
Abstract: TMDB HD6417021 HD6437020 HD6437021 HD6477021 SH7000 SH7020 SH7021 h500
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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SH7020,
SH7021
MD 202
TMDB
HD6417021
HD6437020
HD6437021
HD6477021
SH7000
SH7020
h500
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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29LV641
Abstract: 29LV640D
Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
TSR048--
16-038-TS48
TSR048
29LV640D
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Untitled
Abstract: No abstract text available
Text: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate
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28F016SV
16-MBIT
28F016SA,
28F008SA
28F008SA
56-Lead
4fl2bl75
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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a19t
Abstract: ba1s 000IH
Text: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FYT160/B
160FT-12
16-MBIT
TC58FYT160/B160
48-pin
a19t
ba1s
000IH
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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MBM29LV160T-90-12/MBM29LV16
OB-90/-12
48-pin
46-pin
48-ball
6C-46P-M02)
46002S-4C
MBM29LV160T-90/-12/M
LV160
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory
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50VSF1420/1421AAXB
TH50VSF1420/1421AAXB
152-bit
48-pin
P-BGA48-1014-1
TH50VSF14
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC58FVT160/B160FT-85.-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FVT160/B160FT-85
TC58FVT160/B160
48-pin
-VT160/B
160FT-85
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Untitled
Abstract: No abstract text available
Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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32KWord
Reading/P18
48-ball,
AT49BV1604
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Untitled
Abstract: No abstract text available
Text: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture - Thirty 32K Word 64K byte Sectors with Individual Write Lockout - Eight 4K Word (8K byte) Sectors with Individual Write Lockout - Two 16K Word (32K byte) Sectors with Individual Write Lockout
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48-Ball,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-900 Series TMP96C031N/F CMOS 16-bit Microcontrollers TMP96C031N/TMP96C031F 1. Outline and Device Characteristics The TMP96C031 are high-speed advanced 16-bit microcon trollers developed for controlling medium to large-scale equip ment. TMP96C031N comes in a 64-pin shrink DIP; the
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TLCS-900
TMP96C031N/F
16-bit
TMP96C031N/TMP96C031F
TMP96C031
TMP96C031N
64-pin
TMP96C031F,
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