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    Nexperia BUK7Y7R8-80EX

    MOSFET N-CH 80V 100A LFPAK56
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    DigiKey BUK7Y7R8-80EX Digi-Reel 19,059 1
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    BUK7Y7R8-80EX Cut Tape 19,059 1
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    BUK7Y7R8-80EX Reel 18,000 1,500
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    Avnet Americas BUK7Y7R8-80EX Reel 13 Weeks 1,500
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    Win Source Electronics BUK7Y7R8-80EX 12,244
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    Analog Devices Inc LTC3880EUJ-1-TRPBF

    IC REG CTRLR BUCK PMBUS 40QFN
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    DigiKey LTC3880EUJ-1-TRPBF Digi-Reel 4,710 1
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    LTC3880EUJ-1-TRPBF Reel 4,000 2,000
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    Nexperia BUK763R8-80E,118

    MOSFET N-CH 80V 120A D2PAK
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    DigiKey BUK763R8-80E,118 Reel 4,000 800
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    Newark BUK763R8-80E,118 Cut Tape 1,024 1
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    TTI BUK763R8-80E,118 Reel 4,800
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    TME BUK763R8-80E,118 1
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    Avnet Silica BUK763R8-80E,118 32,800 12 Weeks 800
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    EBV Elektronik BUK763R8-80E,118 12 Weeks 800
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    Analog Devices Inc LTC3880EUJ-TRPBF

    IC REG CTRLR BUCK PMBUS 40QFN
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    DigiKey LTC3880EUJ-TRPBF Cut Tape 3,684 1
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    LTC3880EUJ-TRPBF Digi-Reel 3,684 1
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    Nexperia BUK9M28-80EX

    MOSFET N-CH 80V 33A LFPAK33
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    DigiKey BUK9M28-80EX Cut Tape 2,175 1
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    BUK9M28-80EX Digi-Reel 2,175 1
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    BUK9M28-80EX Reel 1,500 1,500
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    Newark BUK9M28-80EX Cut Tape 2,980 1
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    TTI BUK9M28-80EX Reel 3,000
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    TME BUK9M28-80EX 1,500 1
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    Avnet Asia BUK9M28-80EX 15,000 10 Weeks 3,000
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    Avnet Silica BUK9M28-80EX 12 Weeks 1,500
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    EBV Elektronik BUK9M28-80EX 12 Weeks 1,500
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    Win Source Electronics BUK9M28-80EX 33,700
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    Find more 880E price and stock on Findchips.com

    880E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    880E18A GIGA Synchronous Burst SRAMs, 8Meg, 512K x 18,2.5 V and 3.3 V Original PDF
    880E32A GIGA Synchronous Burst SRAMs, 8Meg, 256K x 32,2.5 V and 3.3 V Original PDF
    880E36A GIGA Synchronous Burst SRAMs, 8Meg, 256K x 36,2.5 V and 3.3 V Original PDF

    880E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    OD-880E

    Abstract: No abstract text available
    Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX .080 • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission .209 .220 • High uniform output .017 • TO-46 Header .178 .195 .100 .041 1.00 MIN .022


    Original     		OD-880E 880nm 100mA 100Hz OD-880E PDF

    OD-880E

    Abstract: No abstract text available
    Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission .017 • High uniform output • TO-46 Header .178 .195 .100 .041 All dimensions are nominal in inches unless otherwise


    Original     		OD-880E 880nm 100mA 100Hz OD-880E PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX .080 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission • High uniform output .017 .178 .195 • TO-46 Header .100 .041 1.00 MIN .022


    Original     		OD-880E 880nm 100mA 100Hz PDF

    OD-880E

    Abstract: No abstract text available
    Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission • High uniform output .017 • TO-46 Header .178 .195 .100 .041 1.00 MIN .022


    Original     		OD-880E 880nm 100mA 100Hz OD-880E PDF

    Untitled

    Abstract: No abstract text available
    Text: +85 COM-880E -40 C Wide-Range Temperature Intel 3rd Gen. Core COM Express Basic Type 6 CPU Module Features • • • • • • Soldered Onboard 3rd Gen. Intel® Core™ i7-3517UE Processor Integrated Gigabit Ethernet Dual Channels 24-bit LVDS, Analog RGB, and 3 x DDI Ports


    Original     		COM-880E i7-3517UE 24-bit SLB9635 82579LM F75111 COM-880E-3517UE i7-3517UE/ HS-65M2-F2 PDF

    K d998 transistor

    Abstract: lz 02 1068 D844 voltage regulator
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball K d998 transistor lz 02 1068 D844 voltage regulator PDF

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0 PDF

    Untitled

    Abstract: No abstract text available
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: 880E18/32/36CT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 1.8 V or 2.5 V +10%/–10% core power supply


    Original     		GS880E18/32/36CT-xxxV 100-Pin 100-lead 880ExxC PDF

    PSRAM

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
    Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		M36L0R8060T1 M36L0R8060B1 M36L0R8060T1: 880Dh M36L0R8060B1: 880Eh 54MHz PSRAM RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA PDF

    Untitled

    Abstract: No abstract text available
    Text: 880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply


    Original     		GS880E18/32/36BT-333/300/250/200/150 100-Pin 100-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: 880E18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for


    Original     		GS880E18/32/36BT-xxxV 100-Pin 100-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: 880E18/32/36CT-xxxI 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply


    Original     		GS880E18/32/36CT-xxxI 100-Pin 100-lead 880ExxC PDF

    Untitled

    Abstract: No abstract text available
    Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		M30L0R8000T2 M30L0R8000B2 PDF

    8X305

    Abstract: 8X305 assembly manual HP1650A d3800 dp8340 ior 227h Specification of seven segment 5250 PC327 TK 9107 8X305 manual
    Text: MPA-II National Semiconductor Application Note 641 Thomas Norcross Paul J Patchen Thomas J Quigley Tim Short Debra Worsley Laura Johnson April 1995 Table of Contents 1 0 INTRODUCTION About This System User Guide Contents of the MPA-II Design Evaluation Kit


    Original     		DP8344B 20-3A 8X305 8X305 assembly manual HP1650A d3800 dp8340 ior 227h Specification of seven segment 5250 PC327 TK 9107 8X305 manual PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O Features Flow Through / Pipeline Reads • FT pin for user-configurable flow through or pipelined operation


    Original     		GS880E18/32/36T-11/11 100-Pin 80Mhz GS880E18/32/36T1 3/2000N; 3/2000O; 9/1999I 1999K880E18/32/36T1 PDF

    APC UPS CIRCUIT DIAGRAM

    Abstract: OPTICAL PICK-UP DL6 32k nsk crystal clock oscillator 32 knsk crystal clock oscillator pml 009A CIRCUIT DIAGRAM APC UPS 750 OPTICAL PICK-UP DL3 ford ecu decoding APC be 500 UPS CIRCUIT DIAGRAM APC UPS CIRCUIT DIAGRAM 500
    Text: COMPART DISC PLAYER S5L9232 DESCRIPTION The S5L9232 is a one-chip LSI for Compact Disc Players including a CMOS RF, Digital Servo, CD digital signal processor, Dynamic Bass Boost, Sigma-Delta D/A converter, and Shock-proof memory controller. FEATURES The S5L9232 has the following features:


    Original     		S5L9232 S5L9232 APC UPS CIRCUIT DIAGRAM OPTICAL PICK-UP DL6 32k nsk crystal clock oscillator 32 knsk crystal clock oscillator pml 009A CIRCUIT DIAGRAM APC UPS 750 OPTICAL PICK-UP DL3 ford ecu decoding APC be 500 UPS CIRCUIT DIAGRAM APC UPS CIRCUIT DIAGRAM 500 PDF

    w16 72

    Abstract: DES Encryption TMS320
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball w16 72 DES Encryption TMS320 PDF

    Untitled

    Abstract: No abstract text available
    Text: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		28F640L18, 28F128L18, 28F256L18 128Mb 16-Mbit 256Mb 16-Kword 128-Mbit 256-Mbit PDF

    D844 voltage regulator

    Abstract: 9427h 9216h
    Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


    Original     		OMAP5912 SPRS231E SPRS231D SPRS231E. 289-ball D844 voltage regulator 9427h 9216h PDF

    d2f3

    Abstract: EG20T delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3
    Text: Intel Platform Controller Hub EG20T Datasheet January 2011 Order Number: 324211-003US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS


    Original     		EG20T 324211-003US EG20T EG20T--Ballout d2f3 delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3 PDF

    880e

    Abstract: OD880E
    Text: HIGH-POWER GaAIAs IR EMITTERS OD-880E FEATURES • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission • High uniform output • TO-46 Header All dimensions are nominal in inches unless otherwise specified. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C


    OCR Scan     		OD-880E 880nm 100mA 100mA 880e OD880E PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER GaAIAs IR EMITTERS OD-880E FEATURES • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission • High uniform output • TO-46 Header • 100% test for minimum power requirement All dimensions are nominal values in inches unless


    OCR Scan     		OD-880E 880nm PDF

    U8100E Diode

    Abstract: U880E Diode u880e U8100E
    Text: MOTOROLA Order this document by MUR8100E/D SEMICONDUCTOR TECHNICAL DATA SWITCH MODE Power R ectifiers MUR8100E 880E Ultrafast “E” Series with High Reverse Energy Capability MUR8100E is a Motorola Preferred Device . . . designed for use in switching power supplies, inverters and as free


    OCR Scan     		MUR8100E/D MUR8100E MUR880E MUR8100E O-220 U8100E Diode U880E Diode u880e U8100E PDF