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    890UA Price and Stock

    TDK Micronas GmbH HAL1890-UA

    PROGRAMMABLE LINEAR HALL SENSOR
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    DigiKey HAL1890-UA Bulk 2,000
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    TDK Corporation HAL1890 UA-A

    Industrial Motion & Position Sensors
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    Mouser Electronics HAL1890 UA-A
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    Vishay Intertechnologies 595D476X9020D2T

    Tantalum Capacitors - Solid SMD 47uF 20volts 10% D case Conformal
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    TTI 595D476X9020D2T Reel 1,500 500
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    Nichicon Corporation LLS2C561MELA

    Aluminum Electrolytic Capacitors - Snap In 160volts 560uF Long Life
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    TTI LLS2C561MELA Bulk 250
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    890UA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DAC1253X

    Abstract: No abstract text available
    Text: 2.5V 12BIT 2MSPS DAC DAC1253X GENERAL DESCRIPTION FEATURES The DAC1253X is a CMOS 12Bit D/A converter for • • • • • • • • general application. This digital to analog converter has a R-string structure. Its settling time is 500ns Typical value .


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    12BIT DAC1253X DAC1253X 500ns 12Bit 890uA VDD25A1 VSS25A1 PDF

    samsung hdd motor

    Abstract: jvc capacitor jvc 10uf capacitor jvc hdd motor DAC1252X samsung data converter guide
    Text: 2.5V 8BIT 2MSPS DAC GENERAL DESCRIPTION FEATURES The DAC1252X_JVC is a CMOS 8BIT D/A converter for general application. This digital to analog converter has a R2R structure. Its settling time is 500ns Typical value . TYPICAL APPLICATIONS • • • • DAC1252X_JVC


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    DAC1252X 500ns 890uA AVDD18D AVBB25A AVSS25D AVDD25D samsung hdd motor jvc capacitor jvc 10uf capacitor jvc hdd motor samsung data converter guide PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 


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    2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019 PDF

    marking code 4h diode

    Abstract: No abstract text available
    Text: EMC1187 Triple Channel 1°C Temperature Sensor with Hardware Thermal Shutdown and 1.8V SMBus Communications PRODUCT FEATURES Datasheet General Description Applications The EMC1187 is a high accuracy, low cost, 1.8V System Management Bus SMBus compatible temperature sensor.


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    EMC1187 EMC1187 EMC1187-1 10-Pin marking code 4h diode PDF

    IC CD4066

    Abstract: IC 74C14 74C905 circuit diagram of ic cd4066 cd4024 applications pin diagram of ic cd4066 APPLICATION NOTE CD4066 IC CD4066 diagram catalyst 2736 CD4066 PIN DIAGRAM
    Text: Application Note 23 April 1987 Micropower Circuits for Signal Conditioning Jim Williams Low power operation of electronic apparatus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications are good candidates for battery driven, low power operation. Micropower


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    1000pF LT1022 LT1010 an23f AN23-24 IC CD4066 IC 74C14 74C905 circuit diagram of ic cd4066 cd4024 applications pin diagram of ic cd4066 APPLICATION NOTE CD4066 IC CD4066 diagram catalyst 2736 CD4066 PIN DIAGRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: EMC1188 Quad Channel 1°C Temperature Sensor with Hardware Thermal Shutdown and 1.8V SMBus Communications PRODUCT FEATURES Datasheet General Description Applications The EMC1188 is a high accuracy, low cost, 1.8V System Management Bus SMBus compatible temperature sensor.


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    EMC1188 EMC1188 EMC1188-1 10-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: EMC1182 Dual Channel 1°C Temperature Sensor with Beta Compensation and 1.8V SMBus Communications PRODUCT FEATURES Datasheet General Description Applications The EMC1182 is a high accuracy, low cost, 1.8V System Management Bus SMBus compatible temperature sensor.


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    EMC1182 EMC1182 EMC1182-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: EMC1183 Triple Channel 1°C Temperature Sensor with Beta Compensation and 1.8V SMBus Communications PRODUCT FEATURES Datasheet General Description Applications The EMC1183 is a high accuracy, low cost, 1.8V System Management Bus SMBus compatible temperature sensor.


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    EMC1183 EMC1183 EMC1183-A 10-Pin PDF

    290A transistor

    Abstract: transistor 2sd667 2SD667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier „ ORDERING INFORMATION


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    2SD667 2SD667 2SD667L-T9N-B 2SD667G-T9N-B 2SD667L-T9N-K 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667 PDF

    290A transistor

    Abstract: 2SD667 transistor 2sd667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier * Halogen Free


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    2SD667 2SD667 2SD667G-T9N-B 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667 PDF

    Untitled

    Abstract: No abstract text available
    Text: EMC1186 Dual Channel 1°C Temperature Sensor with Hardware Thermal Shutdown and 1.8V SMBus Communications PRODUCT FEATURES Datasheet General Description Applications The EMC1186 is a high accuracy, low cost, 1.8V System Management Bus SMBus compatible temperature sensor.


    Original
    EMC1186 EMC1186 EMC1186-1 EMC1186-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: EMC1184 Quad Channel 1°C Temperature Sensor with Beta Compensation and 1.8V SMBus Communications PRODUCT FEATURES Datasheet General Description Applications The EMC1184 is a high accuracy, low cost, 1.8V System Management Bus SMBus compatible temperature sensor.


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    EMC1184 EMC1184 EMC1184-A 10-Pin PDF

    DAC1252X

    Abstract: No abstract text available
    Text: 2.5V 8BIT 2MSPS DAC DAC1252X GENERAL DESCRIPTION FEATURES The DAC1252X is a CMOS 8BIT D/A converter for general application. This digital to analog converter has a R2R structure. Its settling time is 500ns Typical value . TYPICAL APPLICATIONS • • •


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    DAC1252X DAC1252X 500ns 890uA AVBB25A AVSS25D AVDD25D AVSS25A AVDD25A PDF

    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan
    NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644 PDF

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan
    NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B PDF

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan
    NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029 PDF

    C621

    Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan
    PDF

    SA2713

    Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan
    NPN110. /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea SA2713 MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A PDF

    K1502

    Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan
    NPN110. B170024 4000n K1502 Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B PDF

    2N5508

    Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan
    NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N5508 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551 PDF