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    Panasonic Electronic Components ERG-2SJ110A

    RES 11 OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ110A Reel 6,000 3,000
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    Panasonic Electronic Components ERG-2SJ111E

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    DigiKey ERG-2SJ111E Cut Tape 154 1
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    ERG-2SJ111E Ammo Pack
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    Panasonic Electronic Components ERG-2SJ110

    RES 11 OHM 5% 2W AXIAL
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    Panasonic Electronic Components ERG-2SJ111

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    New Advantage Corporation ERG-2SJ111 15,000 1
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    Panasonic Electronic Components ERG-2SJ113

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    Master Electronics ERG-2SJ113 1
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    2SJ11 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ11 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ11 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SJ11 Unknown FET Data Book Scan PDF
    2SJ11 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ11 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ11 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ110 Unknown FET Data Book Scan PDF
    2SJ110 Toshiba Junction FETs Scan PDF
    2SJ111 Unknown FET Data Book Scan PDF
    2SJ111 Toshiba Junction FETs Scan PDF
    2SJ112 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ112 Unknown FET Data Book Scan PDF
    2SJ112 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ112 Toshiba Silicon P-Channel MOS Type FET, Audio Frequency Power Amp Application Scan PDF
    2SJ113 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ113 Unknown Scan PDF
    2SJ113 Unknown FET Data Book Scan PDF
    2SJ113 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ113 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ114 Hitachi Semiconductor Power Transistors Data Book Scan PDF

    2SJ11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


    Original
    2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122 PDF

    2sj117

    Abstract: Hitachi 2SJ Hitachi DSA002756 hitachi 2sj117
    Text: 2SJ117 Silicon P-Channel MOS FET Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.


    Original
    2SJ117 2sj117 Hitachi 2SJ Hitachi DSA002756 hitachi 2sj117 PDF

    2sj28

    Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40


    Original
    2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2sj28 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73 PDF

    2SJ117

    Abstract: No abstract text available
    Text: 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.


    Original
    2SJ117 ADE-208-1180 O-220AB 2SJ117 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA0076 2SJ117 hitachi 2sj117
    Text: 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.


    Original
    2SJ117 ADE-208-1180 O-220AB Hitachi 2SJ Hitachi DSA0076 2SJ117 hitachi 2sj117 PDF

    2SJ113

    Abstract: No abstract text available
    Text: blE D I MMT h ED S DGI STO S äST « H I T H 2SJ113 HITACHI/ OPTOELECTRONICS ~ SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER -(2-* Com plem entary pair w ith 2 S K 3 9 9 • FEATURES • Low On-Resistance. • High Speed Switching.


    OCR Scan
    2SJ113 2SK399 44Tb205 2SJ113 PDF

    DIODE T25 4

    Abstract: 2SJ112 DIODE T25 DIODE T25 4 C DIODE T25 4 IO 2SK39A II-60 kos0 DIODE T25 4 lo
    Text: T3 HITACHI/-COPTOELECTRONICS} D E | 4MTtiS0S DQlGOBfl 0 73C 10038 ^7rgrB^TT5 R TTTiU H I / U P I O b L h L I H U N iu t > D 2SK398 S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry pair w ith 2SJ112


    OCR Scan
    2SJ112 DIODE T25 4 2SJ112 DIODE T25 DIODE T25 4 C DIODE T25 4 IO 2SK39A II-60 kos0 DIODE T25 4 lo PDF

    2SK398

    Abstract: XSJ112
    Text: 2SJ112 V V 3 > P f - t * JU M P S FET SILIC O M P-CHANNEL MOS F E T HIGH SPEED POW ER SWITCHING HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2 S K 3 9 8 2 S K 3 9 8 t 3 > y ; * > 5» 'J 'N-r SAUL Jtiai if 1• //I * 1\\ 1 ^ z. I _ #40 JE D E C TO-3


    OCR Scan
    2SK398 7a-25 XSJ112 Vjf--10V --10V 2SK398 PDF

    diode t25 4 HO

    Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
    Text: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.


    OCR Scan
    441bEG5 2SK310 diode t25 4 HO diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: b lE D 441b2G 5 2SJ117 D D IE ^ IM flbl « H I T H H IT A C H I/tO P T O E L E C T R O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. •


    OCR Scan
    441b2G 2SJ117 2SK310 TEMPERATURE17 44Tb2DS PDF

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan
    2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 PDF

    2sk405 2sj115

    Abstract: 2SJ11 2SK405 2SJ115
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ115 SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 03.2x0.2 1 5l9 MAX . FEATURES: . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYf s I=2.OS Typ. . Complementary to 2SK405


    OCR Scan
    2SJ115 2SK405 -160V 2sk405 2sj115 2SJ11 2SK405 2SJ115 PDF

    2SJ114

    Abstract: diode t25 4 fo 11X1
    Text: IHIT4 M4clbEGS □OlE'iOÛ Sbñ 2SJ114 H I T A C H I / OPTOELECTRONICS blE D S IL IC O N P -C H A N N E L M O S FET Öl HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER 4t« i.Qía2 • FEATURES • Low On-Resistance. • High Speed Switching.


    OCR Scan
    PDF

    2sj113

    Abstract: 2SK399
    Text: 2SJ113 y U=i> M O S FET SILICON P-CHANNEL M O S FET HIGH SP EED POWER SW ITCHING Complementary pair with 2SK 39 9 2SK399 t a > -f U * > $ y *C 7 5.0max. 1.5 1. y 2. — h i G ate Kl' " i y D rain 7 9 > x (F lan g e) 3. V — * I S ource 0.6 (D im ensions in mm)


    OCR Scan
    2SJ113 2SK399 Ta-25 --15V* 2sj113 PDF

    2sk405 2sj115

    Abstract: 2SJ115 2SK405
    Text: M5E 3> m =10=17250 0 0 1 7 0 3 0 ITOSH 2 2SJ115 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AUDI O FREQUENCY POWER AM PL IF IE R APPLICATION. 03.2 t. 0.2 FEATURES: . High Breakdown Voltage : V d s $=-160V . High Forward Transfer Admittance


    OCR Scan
    -L60v 2SSC405 2SJ115 032ta2 ciDci755D T-39-23 -2SJ115 2sk405 2sj115 2SJ115 2SK405 PDF

    transistor a103

    Abstract: a103 transistor a103 m Transistor 2SJ115
    Text: M5E 3> m =10=17250 0 0 1 7 0 3 0 ITOSH 2 TOSHIBA FIELD EFFECT TRANSISTOR 2SJ115 SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AUDI O FREQUENCY POWER AM PL IF IE R APPLICATION. 03.2 t. 0.2 FEATURES: . High Breakdown Voltage : V d s $=-160V . High Forward Transfer Admittance


    OCR Scan
    -L60v 2SSC405 2SJ115 032ta2 001703E T-39-23 -2SJ115 transistor a103 a103 transistor a103 m Transistor 2SJ115 PDF

    2SK399

    Abstract: 2SJ113 J-10
    Text: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.


    OCR Scan
    2SJ113 GG1304Ã 2SK399 2SJ113 J-10 PDF

    2sk405 2sj115

    Abstract: 2sj115 2SJ115/2SK405
    Text: FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ115 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 15.9M A X . 0 3 .a ± O i8 FEATURES: O io| ri -«I . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYfs I=2.OS Typ.


    OCR Scan
    2SJ115 2SK405 2sk405 2sj115 2sj115 2SJ115/2SK405 PDF

    2sk405 2sj115

    Abstract: 2SK405 2SJ115 2SJ115/2SK405
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK405 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mra 0 3 . 'Z ± O . Z FEATURES: . High Breakdown Voltage VDSS=1&0V . High Forward Transfoer Admittance |Yfs]=2.0S Typ. . Complementary to 2SJ115


    OCR Scan
    2SK405 2SJ115 2sk405 2sj115 2SK405 2SJ115/2SK405 PDF

    2SK310

    Abstract: 2SK311 3 phase UPS block diagram 2SJ117
    Text: 2 S K 3 1 0 ,2 S K 3 1 1 y U 3 > N » * * J b M 0 S FET S IL IC O N N -C H A N N E L M O S FET 2SJ117 HIGH S P E E D PO W ER S W IT C H IN G C om p lem entary pair with 2 S J 1 1 7 1. Y — \ ! G ate 2. K V 's : D rain 7 7 > ÿ (F lange) 3. V — X ! Source


    OCR Scan
    2SK310, 2SK311 2SJ117 2SK310 f-150 2SK311 3 phase UPS block diagram PDF

    2SK41

    Abstract: 2sk413 HK-2-G 2SJ118 2SK414 2SK4132 GG13 fr diode 205 PM12A
    Text: blE D • MM'IbSDS 00130bl 337 ■ HITH 2SK413,2SK414 H I T A C H I / { O P T O E L E C T R O N IC SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ118, 119 ■ FEATURES • • • • • Low On-Resistance.


    OCR Scan
    00130bl 2SJ118, 2SK413 2SK414 2SK41 HK-2-G 2SJ118 2SK414 2SK4132 GG13 fr diode 205 PM12A PDF

    2Sk398

    Abstract: 2SJ112
    Text: HITACHI/-COPTOELECTRONICS} l^ r e r S Y O b "73 DËJ 4 ^ 2 0 5 73C 1 0 0 38 H I T ÆU f f T / O H I U h L h C I H O N 1 T J S T 001D03Ö 0 D 2SK398— S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2SJ112


    OCR Scan
    001D03Ö 2SK398-- 2SJ112 2SK398: 2Sk398 2SJ112 PDF

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan
    2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915 PDF

    2SJ117

    Abstract: 2SK310
    Text: 2SJ117 S I L I C O N P - C H A N N E L M O S FET 2 S K 3 1 0 t 3 'S'? ' > X ? • *S • * 4 ft y+y7x t - F ¿ O il* , • S^A ftflK C A SO M C i«* • X4 7f-y/u4-‘a U-*. DC-DCav/<-y. JED ECTO 220AB) ■ A B S O LU T E M A X IM U M R A T IN G S P O W E R VS.


    OCR Scan
    2SJ117 2SK310 220AB) -10mA. 2SJ117 PDF