BD307
Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor
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BU306F/307F
BD306F
BD307F
BU306F
BU307F
BD307
BU306
9v dc motor
BU306F
BU307F
transistor 400v
BD306
300V transistor npn 2a
NPN Transistor 1A 400V
transistor b 40 Ic-5A datasheet
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Untitled
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BUV41 DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @lc= 3A • High Switching Speed
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BUV41
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BUV48
Abstract: BUV48A buv48 equivalent BUV48 Applications
Text: SavantIC Semiconductor Product Specification BUV48 BUV48A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING See Fig.2
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BUV48
BUV48A
BUV48
BUV48A
buv48 equivalent
BUV48 Applications
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darlington 8A 300V
Abstract: 300v zener NPN Transistor 8A 8A 300V npn bu941zp 1A 300V TRANSISTOR Designed for automotive ignition applications MJW16010A 300V switching transistor Zener Diodes 300v
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Built In Clamping Zener ·High Operating Junction Temperature APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators.
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BUV48A
Abstract: BUX48A bux48a equivalent BUX48A DATA
Text: 1165900 High power NPN silicon transistors. Features: • • • • NPN transistor. High voltage capability. High current capability. Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters.
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BUV48A
BUX48A
bux48a equivalent
BUX48A DATA
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NTE385
Abstract: No abstract text available
Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
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NTE385
NTE385
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
O-220
QW-R214-022.
QW-R214-022
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
BU941ZL-TQ2-T
BU941ZG-TQ2-T
BU941ZL-TQ2-R
BU941ZG-TQ2-R
O-220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
O-220
BU941ZL-TQ2-T
BU941ZG-TQ2-T
O-263
BU941ZL-TQ2-R
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4055 Case : TO-220 T8V45FX Unit : mm 8A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4055
O-220
T8V45FX)
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2SC4055
Abstract: T8V45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4055 Case : TO-220 T8V45FX Unit : mm 8A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4055
O-220
T8V45FX)
2SC4055
T8V45FX
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2SC4055
Abstract: T8V45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4055 Case : TO-220 T8V45FX Unit : mm 8A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4055
O-220
T8V45FX)
2SC4055
T8V45FX
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2SC4057
Abstract: T8W45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4057 Case : MTO-3P T8W45FX Unit : mm 8A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4057
T8W45FX)
2SC4057
T8W45FX
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2SC4057
Abstract: T8W45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4057 Case : MTO-3P T8W45FX Unit : mm 8A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4057
T8W45FX)
2SC4057
T8W45FX
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2SC4055
Abstract: T8V45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4055 Case : TO-220 T8V45FX 8A NPN Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4055
O-220
T8V45FX)
2SC4055
T8V45FX
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TP8V45FX
Abstract: 2SC4056 ITO-220
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4056 Case : ITO-220 TP8V45FX Unit : mm 8A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4056
ITO-220
TP8V45FX)
TP8V45FX
2SC4056
ITO-220
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4056 Case : ITO-220 TP8V45FX Unit : mm 8A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4056
TP8V45FX)
ITO-220
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2SC4055 transistor
Abstract: No abstract text available
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4055 Case : TO-220 T8V45FX Unit : mm 8A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4055
T8V45FX)
O-220
2SC4055 transistor
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BUX22 equivalent
Abstract: SDT96306
Text: at SOLITRON DEVICES INC 7" - 7 j - o r FË^fl3t.at.05 oooasTa 3 I " - ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, HIGH CURRENT NPN EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 Â Aluminum Collector: Polished Silicon
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88mmX9
305mm)
15MHz
15MHz
800pF
BUX22 equivalent
SDT96306
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SDT96308
Abstract: sdt96
Text: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
cont10V
800pF
800pF
JAN2N5250,
JAN2N5251,
SDT96308
sdt96
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transistor 05c
Abstract: 800PF 2N6325 SDT96301 SDT96308 8A550A
Text: ^/olitron [p|£ì |D lJ)(ST Ä T Ä IL © ( M EDIUM TO HIGH VOLTAGE, HIGH CURRENT Devices. Inc. CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 96) cf] CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
transistor 05c
800PF
2N6325
SDT96301
SDT96308
8A550A
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2NG307
Abstract: 2N6306 ns802 2N6307 2N6308 unitrode 655
Text: POWER TRANSISTORS S 8 Amp, 700V, Triple Diffused NPN Mesa 2N6308 FEATURES • Collector-Base Voltage: up to 700V • Peak Collector Current: 16A • Rise Time: ^ 600 n s • Fall Time: < 400 ns f @ ' c “ 3A D E S C R IP T IO N These high voltage triple diffused glass
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2N6306
2N6307
N6308
600nsl
2N6308
2NG307
ns802
2N6308
unitrode 655
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800V PNP
Abstract: pnp 1500v 8a BUX88 BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v pnp transistor 800v BU508DF BU603 PNP 300V
Text: N AMER PHILIPS/DISCRETE 44 2SE T> m ^>[=53=131 ÛQlbES2 T • T-33-Í?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating TYPE NO. PACKAGE OUTLINE ,C(DC)0) VCES BU505 TO-220AB 2.5A BU506 TO-220AB 3A BU506D TO-220AB 3A SOT-93A 3A BU706
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T-33-Ã
BU505
O-220AB
BU506
BU506D
BU706
OT-93A
BU706D
800V PNP
pnp 1500v 8a
BUX88
BU508AF PHILIPS SEMICONDUCTOR
pnp 1200V 2A
high voltage pnp transistor 700v
pnp transistor 800v
BU508DF
BU603
PNP 300V
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2SD648A
Abstract: 2SD648
Text: 2SD648A SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2 “ J2!5.2±Û.2 DC MOTOR CONTROL APPLICATIONS. ELECTRIC CAR APPLICATIONS. FEATURES t . High Voltage : VC E O SUS =300V . Triple Diffused Design.
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2SD648A
S-300/te,
1000kg
2SD648A
2SD648
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