BD307
Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor
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BU306F/307F
BD306F
BD307F
BU306F
BU307F
BD307
BU306
9v dc motor
BU306F
BU307F
transistor 400v
BD306
300V transistor npn 2a
NPN Transistor 1A 400V
transistor b 40 Ic-5A datasheet
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Untitled
Abstract: No abstract text available
Text: BU306F Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)600 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)8.0
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BU306F
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BU306A
Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or
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SN74CB3Q3306A
SCDS113D
BU306A
C101
SN74CB3Q3306A
SN74CB3Q3306APW
SN74CB3Q3306APWR
BU306
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BU306A
Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or
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SN74CB3Q3306A
SCDS113D
BU306A
C101
SN74CB3Q3306A
SN74CB3Q3306APW
SN74CB3Q3306APWR
BU306
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )
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SN74CB3Q3306A
SCDS113E
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BU306
Abstract: SN74CB3Q3306PWR
Text: SN74CB3Q3306 DUAL SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH FET BUS SWITCH SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002 D Low and Flat On-State Resistance ron D D D D D D D D High-Bandwidth Data Path (Up To 533 MHz) D Low Power Consumption
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SN74CB3Q3306
SCDS113A
BU306
SN74CB3Q3306PWR
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BU306A
Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or
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SN74CB3Q3306A
SCDS113D
BU306A
C101
SN74CB3Q3306A
SN74CB3Q3306APW
SN74CB3Q3306APWR
BU306
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or
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SN74CB3Q3306A
SCDS113D
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BU306A
Abstract: No abstract text available
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or
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SN74CB3Q3306A
SCDS113D
BU306A
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SN74CB3Q3306A
Abstract: SN74CB3Q3306APW SN74CB3Q3306APWR BU306A C101
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH BUS SWITCH SCDS113D − DECEMBER 2002 − REVISED NOVEMBER 2003 D High-Bandwidth Data Path D D D D D D D Data and Control Inputs Provide Up to 500 MHz† 5-V Tolerant I/Os with Device Powered-Up
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SN74CB3Q3306A
SCDS113D
SN74CB3Q3306A
SN74CB3Q3306APW
SN74CB3Q3306APWR
BU306A
C101
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Texas Instruments TTL
Abstract: ALVC16425 CD4066B spice model LVT - Low-Voltage BiCMOS Technology working principle of ic cd4066 CD4054B SCHEMATIC AND PIN DETAILS TI audio squelch can CU384A CD4053 spice MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Text: Signal Switch Including Digital/Analog/Bilateral Switches and Voltage Clamps Data Book Introducing Three New Bus-Switch Families S CB3Q High-Bandwidth Bus Switch S CB3T Low-Voltage Translator Bus Switch S CBT- C Bus Switch With –2-V Undershoot Protection
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CD4000
R-PBGA-N20)
4204492/A
MO-225
Texas Instruments TTL
ALVC16425
CD4066B spice model
LVT - Low-Voltage BiCMOS Technology
working principle of ic cd4066
CD4054B SCHEMATIC AND PIN DETAILS TI
audio squelch can
CU384A
CD4053 spice
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )
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SN74CB3Q3306A
SCDS113E
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )
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SN74CB3Q3306A
SCDS113E
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or
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SN74CB3Q3306A
SCDS113D
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or
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SN74CB3Q3306A
SCDS113D
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )
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SN74CB3Q3306A
SCDS113E
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BU306A
Abstract: C101 SN74CB3Q3306A SN74CB3Q3306ADCUR SN74CB3Q3306APW SN74CB3Q3306APWR BU306 SCDS113E ga6r
Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )
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SN74CB3Q3306A
SCDS113E
BU306A
C101
SN74CB3Q3306A
SN74CB3Q3306ADCUR
SN74CB3Q3306APW
SN74CB3Q3306APWR
BU306
SCDS113E
ga6r
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Untitled
Abstract: No abstract text available
Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )
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SN74CB3Q3306A
SCDS113E
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BU306A
Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH BUS SWITCH SCDS113D − DECEMBER 2002 − REVISED NOVEMBER 2003 D High-Bandwidth Data Path D D D D D D D Data and Control Inputs Provide Up to 500 MHz† 5-V Tolerant I/Os with Device Powered-Up
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SN74CB3Q3306A
SCDS113D
BU306A
C101
SN74CB3Q3306A
SN74CB3Q3306APW
SN74CB3Q3306APWR
BU306
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. • bbS3Ci3;L DDlaSb3r ^ ■ BU306F BU307F J N AflER P H I L I P S / ] I S CRETE 2SE D T -5 3 '^ 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically
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BU306F
BU307F
OT186
BU306F
T-33-09
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M-988
Abstract: BU306F 307F BU307F BU306
Text: bbSB'JBl GG1.ÖSL1 1 DEVELOPMENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PHILIPS / D I S CR E T E 2SE D T-33'Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically
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bfaS3131
BU306F
BU307F
OT186
T-33-09
7Z9467?
M-988
307F
BU307F
BU306
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up 3080 lg
Abstract: PS 307 5A B1056 PS 307 2A 307F BU306F BU307F lg-5a ic 7294
Text: 11 GOlöSbl 1 DEVELOPM ENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PH IL IPS /DISCRETE 2SE D T-33-Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically
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BU306F
BU307F
OT186
bS3eL31
T-33-09
up 3080 lg
PS 307 5A
B1056
PS 307 2A
307F
BU307F
lg-5a
ic 7294
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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