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    BU306 Search Results

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    BU306 Price and Stock

    E-T-A X4230-BU306P16A

    CIRC BRKR ACCESSORIES
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    DigiKey X4230-BU306P16A Bulk 1
    • 1 $33.79
    • 10 $33.79
    • 100 $33.79
    • 1000 $33.79
    • 10000 $33.79
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    Mouser Electronics X4230-BU306P16A
    • 1 $27.52
    • 10 $26.16
    • 100 $24.8
    • 1000 $24.49
    • 10000 $24.49
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    RS X4230-BU306P16A Bulk 1
    • 1 $34.13
    • 10 $30.72
    • 100 $30.72
    • 1000 $30.72
    • 10000 $30.72
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    Master Electronics X4230-BU306P16A
    • 1 $22.95
    • 10 $20.48
    • 100 $18.23
    • 1000 $17.48
    • 10000 $17.48
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    Sager X4230-BU306P16A 1
    • 1 $26.62
    • 10 $26.62
    • 100 $21.47
    • 1000 $19.29
    • 10000 $19.29
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    BU306 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BU306F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BU306F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BU306F Philips Semiconductors Silicon Diffused Power Transistors Scan PDF

    BU306 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD307

    Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor


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    PDF BU306F/307F BD306F BD307F BU306F BU307F BD307 BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet

    Untitled

    Abstract: No abstract text available
    Text: BU306F Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)600 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)8.0


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    PDF BU306F

    BU306A

    Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or


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    PDF SN74CB3Q3306A SCDS113D BU306A C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306

    BU306A

    Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or


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    PDF SN74CB3Q3306A SCDS113D BU306A C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )


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    PDF SN74CB3Q3306A SCDS113E

    BU306

    Abstract: SN74CB3Q3306PWR
    Text: SN74CB3Q3306 DUAL SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH FET BUS SWITCH SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002 D Low and Flat On-State Resistance ron D D D D D D D D High-Bandwidth Data Path (Up To 533 MHz) D Low Power Consumption


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    PDF SN74CB3Q3306 SCDS113A BU306 SN74CB3Q3306PWR

    BU306A

    Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or


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    PDF SN74CB3Q3306A SCDS113D BU306A C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or


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    PDF SN74CB3Q3306A SCDS113D

    BU306A

    Abstract: No abstract text available
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or


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    PDF SN74CB3Q3306A SCDS113D BU306A

    SN74CB3Q3306A

    Abstract: SN74CB3Q3306APW SN74CB3Q3306APWR BU306A C101
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH BUS SWITCH SCDS113D − DECEMBER 2002 − REVISED NOVEMBER 2003 D High-Bandwidth Data Path D D D D D D D Data and Control Inputs Provide Up to 500 MHz† 5-V Tolerant I/Os with Device Powered-Up


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    PDF SN74CB3Q3306A SCDS113D SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306A C101

    Texas Instruments TTL

    Abstract: ALVC16425 CD4066B spice model LVT - Low-Voltage BiCMOS Technology working principle of ic cd4066 CD4054B SCHEMATIC AND PIN DETAILS TI audio squelch can CU384A CD4053 spice MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
    Text: Signal Switch Including Digital/Analog/Bilateral Switches and Voltage Clamps Data Book Introducing Three New Bus-Switch Families S CB3Q High-Bandwidth Bus Switch S CB3T Low-Voltage Translator Bus Switch S CBT- C Bus Switch With –2-V Undershoot Protection


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    PDF CD4000 R-PBGA-N20) 4204492/A MO-225 Texas Instruments TTL ALVC16425 CD4066B spice model LVT - Low-Voltage BiCMOS Technology working principle of ic cd4066 CD4054B SCHEMATIC AND PIN DETAILS TI audio squelch can CU384A CD4053 spice MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )


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    PDF SN74CB3Q3306A SCDS113E

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )


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    PDF SN74CB3Q3306A SCDS113E

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or


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    PDF SN74CB3Q3306A SCDS113D

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or


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    PDF SN74CB3Q3306A SCDS113D

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )


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    PDF SN74CB3Q3306A SCDS113E

    BU306A

    Abstract: C101 SN74CB3Q3306A SN74CB3Q3306ADCUR SN74CB3Q3306APW SN74CB3Q3306APWR BU306 SCDS113E ga6r
    Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )


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    PDF SN74CB3Q3306A SCDS113E BU306A C101 SN74CB3Q3306A SN74CB3Q3306ADCUR SN74CB3Q3306APW SN74CB3Q3306APWR BU306 SCDS113E ga6r

    Untitled

    Abstract: No abstract text available
    Text: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )


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    PDF SN74CB3Q3306A SCDS113E

    BU306A

    Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
    Text: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH BUS SWITCH SCDS113D − DECEMBER 2002 − REVISED NOVEMBER 2003 D High-Bandwidth Data Path D D D D D D D Data and Control Inputs Provide Up to 500 MHz† 5-V Tolerant I/Os with Device Powered-Up


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    PDF SN74CB3Q3306A SCDS113D BU306A C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306

    Untitled

    Abstract: No abstract text available
    Text: DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. • bbS3Ci3;L DDlaSb3r ^ ■ BU306F BU307F J N AflER P H I L I P S / ] I S CRETE 2SE D T -5 3 '^ 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan
    PDF BU306F BU307F OT186 BU306F T-33-09

    M-988

    Abstract: BU306F 307F BU307F BU306
    Text: bbSB'JBl GG1.ÖSL1 1 DEVELOPMENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PHILIPS / D I S CR E T E 2SE D T-33'Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan
    PDF bfaS3131 BU306F BU307F OT186 T-33-09 7Z9467? M-988 307F BU307F BU306

    up 3080 lg

    Abstract: PS 307 5A B1056 PS 307 2A 307F BU306F BU307F lg-5a ic 7294
    Text: 11 GOlöSbl 1 DEVELOPM ENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PH IL IPS /DISCRETE 2SE D T-33-Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan
    PDF BU306F BU307F OT186 bS3eL31 T-33-09 up 3080 lg PS 307 5A B1056 PS 307 2A 307F BU307F lg-5a ic 7294

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan
    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan
    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc