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    8A 905 SURFACE MOUNT TRANSISTOR Search Results

    8A 905 SURFACE MOUNT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    8A 905 SURFACE MOUNT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9418a

    Abstract: irf 418a IRFN450
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFN450 9418a irf 418a IRFN450

    IRFN440

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1552 HEXFET POWER MOSFET IRFN440 N-CHANNEL Ω HEXFET 500 Volt, 0.85Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFN440 IRFN440

    smd 2f

    Abstract: IRFN440
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1552 HEXFET POWER MOSFET IRFN440 N-CHANNEL Ω HEXFET 500 Volt, 0.85Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFN440 smd 2f IRFN440

    9418a

    Abstract: IRFN450
    Text: Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFN450 9418a IRFN450

    motor IG 2200 19

    Abstract: 2N7228U IRFN450 JANTX2N7228U JANTXV2N7228U
    Text: PD-90418B IRFN450 JANTX2N7228U HEXFET POWER MOSFET JANTXV2N7228U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 500 Volt, 0.415Ω Product Summary Part Number IRFN450 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power


    Original     		PDF PD-90418B IRFN450 JANTX2N7228U JANTXV2N7228U MIL-PRF-19500/592] motor IG 2200 19 2N7228U IRFN450 JANTX2N7228U JANTXV2N7228U

    HFA16TA60C

    Abstract: IRFP250 transistor sec 623
    Text: Bulletin PD-2.342 rev. A 11/00 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.7V Qrr *= 65nC di(rec)M/dt * = 240A/µs


    Original     		PDF HFA16TA60C HFA16TA60C IRFP250 transistor sec 623

    8a 905 surface mount transistor

    Abstract: No abstract text available
    Text: Bulletin PD-2.606 rev. A 11/00 HFA16PA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 65nC Benefits


    Original     		PDF HFA16PA60C HFA16PA60C 8a 905 surface mount transistor

    IR 1838 T

    Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
    Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4


    Original     		PDF HFA16PB120 260nC HFA16PB120 IR 1838 T IR 1838 IR 1838 3v IRFP250 vs 1838 b

    9936 transistor

    Abstract: IR 1838 T IR 1838 3v diode 838 HFA16TB120 IRFP250 IR 1838
    Text: Bulletin PD -2.492 rev. A 11/00 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits


    Original     		PDF HFA16TB120 260nC HFA16TB120 9936 transistor IR 1838 T IR 1838 3v diode 838 IRFP250 IR 1838

    555 triangular wave

    Abstract: transistor IRF 630 IRG4BC10S
    Text: PD - 91786 IRG4BC10S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in


    Original     		PDF IRG4BC10S O-220AB O-220AB 555 triangular wave transistor IRF 630 IRG4BC10S

    ULTRAFAST RECTIFIER 16A 600V vf 1.7

    Abstract: HFA16TA60C 16A60 IRFP250
    Text: Bulletin PD-2.342 rev. A 11/00 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.7V Qrr *= 65nC di(rec)M/dt * = 240A/µs


    Original     		PDF HFA16TA60C HFA16TA60C 12-Mar-07 ULTRAFAST RECTIFIER 16A 600V vf 1.7 16A60 IRFP250

    IR 1838 T

    Abstract: IR 1838 3v IR 1838 T datasheet 8A15 IR 1838 T transistor IR 1838
    Text: Preliminary Data Sheet PD -2.360 rev. A 11/00 HFA32PA120C HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. = 2.3V


    Original     		PDF HFA32PA120C 260nC HFA32PA120C IR 1838 T IR 1838 3v IR 1838 T datasheet 8A15 IR 1838 T transistor IR 1838

    HFA16TA60C

    Abstract: No abstract text available
    Text: Bulletin PD-2.342 rev. A 11/00 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.7V Qrr *= 65nC di(rec)M/dt * = 240A/µs


    Original     		PDF HFA16TA60C HFA16TA60C 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4


    Original     		PDF HFA16PB120 260nC HFA16PB120 08-Mar-07

    IRHN7130

    Abstract: IRHN8130
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology


    Original     		PDF IRHN7130 IRHN8130 IRHN7130 IRHN8130

    IRHN8250

    Abstract: IRHN7250
    Text: Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent


    Original     		PDF IRHN7250 IRHN8250 F-360 IRHN8250 IRHN7250

    IRHN7150

    Abstract: IRHN8150
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.720A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 100 Volt, 0.055Ω International Rectifier’s MEGA RAD HARD technology


    Original     		PDF IRHN7150 IRHN8150 IRHN7150 IRHN8150

    IRHN7130

    Abstract: IRHN8130
    Text: Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation


    Original     		PDF IRHN7130 IRHN8130 IRHN7130 IRHN8130

    8a 905 surface mount transistor

    Abstract: IRG4BC10SD Transistor Mosfet N-CH 400V 40A
    Text: PD -91784 IRG4BC10SD PRELIMINARY Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC10SD O-220AB 8a 905 surface mount transistor IRG4BC10SD Transistor Mosfet N-CH 400V 40A

    IR 1838 T

    Abstract: IR 1838 3v 9307-1 HFA16PB120 IRFP250 IR 1838 T transistor D207 VISHAY transistor 2364
    Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4


    Original     		PDF HFA16PB120 260nC HFA16PB120 12-Mar-07 IR 1838 T IR 1838 3v 9307-1 IRFP250 IR 1838 T transistor D207 VISHAY transistor 2364

    HFA16TA60C

    Abstract: IRFP250
    Text: PD -2.342 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 65nC Benefits di rec M/dt * = 240A/µs


    Original     		PDF HFA16TA60C HFA16TA60C IRFP250

    F347

    Abstract: IRHN7250 IRHN8250
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology


    Original     		PDF IRHN7250 IRHN8250 F-360 F347 IRHN7250 IRHN8250

    FR07* diode

    Abstract: FR07
    Text: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­


    OCR Scan     		PDF IRFN450 415ft 415C2 4ASS452 24TGb FR07* diode FR07

    smd U1p

    Abstract: diode smd ed 49 Diode SMD ED 0B u1p smd
    Text: Provisional Data Sheet No. PD-9.1553A International I«R Rectifier HEXFET POWER MOSFET IRFN9140 P -C H A N N E L Product Summary -100Volt,0.20£2 HEXFET H E X F E T te c h n o lo g y is th e key to In te rn a tio n a l Rectifier’s advanced line of power MOSFET transis­


    OCR Scan     		PDF -100Volt smd U1p diode smd ed 49 Diode SMD ED 0B u1p smd