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    8MBIT FRAM Search Results

    8MBIT FRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25DF081A-SH-B Renesas Electronics Corporation 8Mbit 2.7V Minimum SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT25DF081A-MH-T Renesas Electronics Corporation 8Mbit 2.7V Minimum SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT25DF081A-SH-T Renesas Electronics Corporation 8Mbit 2.7V Minimum SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT25DF081A-SSH-B Renesas Electronics Corporation 8Mbit 2.7V Minimum SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT25DF081A-MH-Y Renesas Electronics Corporation 8Mbit 2.7V Minimum SPI Serial Flash Memory Visit Renesas Electronics Corporation

    8MBIT FRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM23MLD16

    Abstract: 3.3v 1Mx8 static ram high speed
    Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz


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    PDF FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16 3.3v 1Mx8 static ram high speed

    Untitled

    Abstract: No abstract text available
    Text: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


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    PDF FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16

    8Mbit FRAM

    Abstract: No abstract text available
    Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz


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    PDF FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16 8Mbit FRAM

    FM23MLD16-60-BG

    Abstract: FM23MLD16 fm23mld16-60 fm23mld1660bg 3.3v 1Mx8 static ram high speed
    Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz


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    PDF FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1 FM23MLD16-60-BG fm23mld16-60 fm23mld1660bg 3.3v 1Mx8 static ram high speed

    Untitled

    Abstract: No abstract text available
    Text: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


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    PDF FM23MLD16 512Kx16 33MHz 512Kx16 FM23MLD16 FM23MLD16, C8556953BG1, FM23MLD16-60-BG C8556953BG1

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MR27V802F FEDR27V802F-01-02 Issue Date: Jul. 9, 2004 524,288–Word x 16–Bit or 1,048,576–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V802F is a 8Mbit electrically One Time Programmable Read-Only Memory that can be electrically


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    PDF MR27V802F FEDR27V802F-01-02 MR27V802F 288-word 16-bit 576-word 16-bit/1

    00FF

    Abstract: MR27V802F MR27V802FTN
    Text: OKI Semiconductor MR27V802F FEDR27V802F-01-01 Issue Date: Jan. 15, 2004 524,288–Word x 16–Bit or 1,048,576–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V802F is a 8Mbit electrically One Time Programmable Read-Only Memory that can be electrically


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    PDF MR27V802F FEDR27V802F-01-01 MR27V802F 288-word 16-bit 576-word 16-bit/1 00FF MR27V802FTN

    MR27V802FTN

    Abstract: 524,288-word x 16-bit MR27V802F MR27V802FMA MR27V802FTP
    Text: OKI Semiconductor MR27V802F FEDR27V802F-01-03 Issue Date: Dec. 8, 2004 524,288–Word x 16–Bit or 1,048,576–Word x 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V802F is a 8Mbit electrically One Time Programmable Read-Only Memory that can be electrically


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    PDF MR27V802F FEDR27V802F-01-03 MR27V802F 288-word 16-bit 576-word 16-bit/1 MR27V802FTN 524,288-word x 16-bit MR27V802FMA MR27V802FTP

    ML2216

    Abstract: CSTCR4M09G55-R0 ML2216-XXXGA ml2216xxxga 4 M CSTCR4M00G55-R0 096MR50X000 09MXC5 fcr4.0mxc5 ML22P16
    Text: FEDL2216DIGEST-03 OKI Semiconductor Issue Date: Nov. 15, 2007 ML2216-XXX/ML22P16 Oki ADPCM2 Algorithm-Based Speech Synthesis LSI GENERAL DESCRIPTION The ML2216-XXX is speech synthesis device with a 8Mbit P2ROM built-in. The ML2216-XXX incorporates ADPCM2 decoder, 12-bit D/A converter, and low-pass filter. Moreover, the


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    PDF ML2216-XXX/ML22P16 FEDL2216DIGEST-03 ML2216-XXX 12-bit ML22P16 ML2216 CSTCR4M09G55-R0 ML2216-XXXGA ml2216xxxga 4 M CSTCR4M00G55-R0 096MR50X000 09MXC5 fcr4.0mxc5

    Untitled

    Abstract: No abstract text available
    Text: FEDL2216FULL-01 OKI Semiconductor Issue Date: Jun. 14, 2006 ML2216-XXX Oki ADPCM2 Algorithm-Based Speech Synthesis LSI GENERAL DESCRIPTION The ML2216-XXX is speech synthesis device with a 8Mbit P2ROM built-in. The ML2216-XXX incorporates ADPCM2 decoder, 12-bit D/A converter, and low-pass filter. Moreover, the


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    PDF FEDL2216FULL-01 ML2216-XXX ML2216-XXX 12-bit

    Untitled

    Abstract: No abstract text available
    Text: FEDL2216DIGEST-04 Issue Date: Nov. 16, 2009 ML2216-XXX/ML22P16 Oki ADPCM2 Algorithm-Based Speech Synthesis LSI GENERAL DESCRIPTION The ML2216-XXX is speech synthesis device with a 8Mbit P2ROM built-in. The ML2216-XXX incorporates ADPCM2 decoder, 12-bit D/A converter, and low-pass filter. Moreover, the


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    PDF FEDL2216DIGEST-04 ML2216-XXX/ML22P16 ML2216-XXX 12-bit ML22P16

    Untitled

    Abstract: No abstract text available
    Text: FEDL2216FULL-03 OKI Semiconductor Issue Date: Sep. 20, 2007 ML2216-XXX/ML22P16 Oki ADPCM2 Algorithm-Based Speech Synthesis LSI GENERAL DESCRIPTION The ML2216-XXX is speech synthesis device with a 8Mbit P2ROM built-in. The ML2216-XXX incorporates ADPCM2 decoder, 12-bit D/A converter, and low-pass filter. Moreover, the


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    PDF FEDL2216FULL-03 ML2216-XXX/ML22P16 ML2216-XXX 12-bit ML22P16

    ML2216

    Abstract: ML22P16 PEDL2216FULL-02 ML2216-XXXGA ML2250 PEDL2216FULL-01 QFP44-P-910-0 MS-6566
    Text: PEDL2216FULL-02 Issue Date: Feb. 10, 2006 Preliminary ML2216-XXX 基于 OKI ADPCM2 算法的语音合成 LSI 概述 ML2216-XXX 是内置 8Mbit P2ROM 的语音合成器件。 ML2216-XXX 集成了 ADPCM2 解码器,12bit D/A 转换器和低通滤波器。另外还内置了单声道扬声器放


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    PDF PEDL2216FULL-02 ML2216-XXX 12bit ML2216 PCM16bit kHz10 ML2216 ML22P16 PEDL2216FULL-02 ML2216-XXXGA ML2250 PEDL2216FULL-01 QFP44-P-910-0 MS-6566

    WVS 64

    Abstract: FP100-P-1420-0 f422
    Text: PJDL87V2108DIGES-01 1電子デバイス 作成:2000 年 11 月 暫定 ML87V2108 8Mbit フィールドメモリ内蔵 映像信号ノイズリダクションライン/フィールドレート変換 IC 本データシートには概略仕様が記述されております。


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    PDF PJDL87V2108DIGES-01 ML87V2108 16bit) 16bit 16MHz 27MHz 32MHz WVS 64 FP100-P-1420-0 f422

    PEB 2235

    Abstract: smd 2035 2045N PEB 82525 ITB00544 ITB00554 ITS00583 ITS00584 2045 Siemens PEB 2045
    Text: Memory Time Switch CMOS MTSC PEB 2045 General Description Type Package The MTSC PEB 2045 is a monolithic CMOS circuit, which has the ability to connect any of the 512 PCM channels of 16 incoming PCM lines to any of the 256 PCM channels of eight output lines.


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    PDF ITB00544 ITS00583 512-channel ITS00584 1024-channel PEB 2235 smd 2035 2045N PEB 82525 ITB00544 ITB00554 ITS00583 ITS00584 2045 Siemens PEB 2045

    FBGA "pin-compatible"

    Abstract: fm23mld16 sports day 38242
    Text: Technologies Design Hotspots Home Resources Product Locator Shows Magazine Feature Articles eBooks & Whitepapers Joe's Blog Jobs More. E-Newsletter Datasheets Product Locator >> Semiconductors >> Memory >> DRAM, SRAM aand other RAM Reprints Email this Article


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    PDF FM23MLD16 48-pin om/locator/products/ArticleID/38242/38242 FBGA "pin-compatible" sports day 38242

    SBC-34

    Abstract: fanuc intel motherboard core2duo CHIPSIP FM23MLD16 i.MX233 chevrolet NuPRO-E320 ADS1115 USB-7204
    Text: Ramtron FM23MLD16 8-Mbit Parallel Nonvolatile F-RAM Memory ~ Embedded Star Upgrade Your RAM Memory Digi-Key Using Our Ram Memory Card Instant Availability, Pricing Specs. Advisor Tool, Find The Exact RAM Quality Components & Service Memory You Need! www.digikey.com


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    PDF FM23MLD16 CAT8900 g/2009/07/23/ramtron-fm23mld16-fram-fbga/ SBC-34 fanuc intel motherboard core2duo CHIPSIP i.MX233 chevrolet NuPRO-E320 ADS1115 USB-7204

    hitachi sh3

    Abstract: fujitsu fr-v HQFP208 HQFP256 MB86290A MB86291 MB87J2120 uPD72254Y bga256 power dissipation Bluetooth Base band controller
    Text: MICROCONTROLLER WORKSHOPS Graphic Controller 1 1 30-Jan-01 Microcomponents Marketing FUJITSU MICROELECTRONICS EUROPE www.fujitsu-fme.com 1 PC graphics sets standards 2 30-Jan-01 Microcomponents Marketing FUJITSU MICROELECTRONICS EUROPE www.fujitsu-fme.com


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    PDF 30-Jan-01 hitachi sh3 fujitsu fr-v HQFP208 HQFP256 MB86290A MB86291 MB87J2120 uPD72254Y bga256 power dissipation Bluetooth Base band controller

    SGRAM

    Abstract: voodoo samsung ap e-tron
    Text: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE How to use Single CS 32M SGRAM in Dual CS system like Voodoo3 Product Planning & Application Engineering WJ-APR-99 The Leader in Memory Technology ELECTRONICS


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    PDF WJ-APR-99 16Mbit 32Mbit 16Mbit) 200MHz 64bit 128bit 100-QFP SGRAM voodoo samsung ap e-tron

    mobile phone circuit diagram

    Abstract: mobile camera circuit diagram LCD for mobile phone 3 mobile phone "Camera Module" mobile phone camera circuit diagram video motion jpeg spi ccd camera circuit diagram mobile phone circuit diagram of camera ccd camera module HMS30C7080
    Text: HMS30C7080 0.18um, 132fBGA MPEG4 Codec for Mobile Phone Mobile Phone Camera Back-End Processor ‰ General Description The HMS30C7080 is a integrated circuit for camera mobile phone application. The device provides an excellent solution for camera mobile phone. The device


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    PDF HMS30C7080 132fBGA) HMS30C7080 RGB/80i ITU601 16bit 10MHz mobile phone circuit diagram mobile camera circuit diagram LCD for mobile phone 3 mobile phone "Camera Module" mobile phone camera circuit diagram video motion jpeg spi ccd camera circuit diagram mobile phone circuit diagram of camera ccd camera module

    DIP42-P-600-2

    Abstract: MR27V852D
    Text: O K I Semiconductor MR27V852D_ Preliminary 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION The MR27V852D is a 8Mbit electrically Programmable Read-Only Memory with page mode. Its


    OCR Scan
    PDF MR27V852D 288-Word 16-Bit 576-Word 16-Word MR27V852D 16bit DIP42-P-600-2

    Untitled

    Abstract: No abstract text available
    Text: SHARP SPEC No. E L 0 9 7 1 9 2 I S S U E : Jul 29 1997 To ; S P E C I F I C A T I O N S Product Type 8Mbit Flash Memory LH28F008 SCT-T12 Mo de l No. LHF 0 8 C 8 9 j^This sp ecificatio n s contains 43 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.


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    PDF LH28F008 SCT-T12 LH28F008SC LH28F008SCT-T12

    2045-N

    Abstract: 2045-P
    Text: Memory Time Switch CMOS MTSC General Description PEB 2045 Type Package The MTSC PEB 2045 is a monolithic CMOS circuit, which has the ability to connect any of the 512 PCM channels of 16 incoming PCM lines to any of the 256 PCM channels of eight output lines.


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    PDF 512-channel 1024-chafmel 2045-N 2045-P

    DD54

    Abstract: DD62 mrf 477 STI3500ACV DD15 DD47 DD48 DD49 DD50 PQFP144
    Text: C 7 ^ 7 # . S C S -T H O M S O N « « L i O T STÌ3500A * ® MPEG-2 /C C IR 601 VIDEO DECODER • REAL-TIME DECODING OF MPEG-1 AND MPEG-2 VIDEO BITSTREAMS AT CCIR 601 RESOLUTION ■ FULLY SUPPORTS MPEG-2 MAIN PRO­ FILE/MAIN LEVEL MP@ML ■ VIDEO OUTPUT


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    PDF 32MBITS STi3500Ais 71ST237 DD54 DD62 mrf 477 STI3500ACV DD15 DD47 DD48 DD49 DD50 PQFP144