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    8MX32 DRAM Search Results

    8MX32 DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    8MX32 DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ED07

    Abstract: ED16-23 TMS320C671
    Text: WED3DL328V 8Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x1Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED07 ED16-23 TMS320C671

    ED16-23

    Abstract: TMS320C TMS320C6000 WED3DL328V
    Text: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED16-23 TMS320C

    100MHZ

    Abstract: 133MHZ 8MX32 WED3DL328V a1011
    Text: White Electronic Designs WED3DL328V 8Mx32 SDRAM FEATURES DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHZ, 125MHZ 100MHZ 100MHZ 133MHZ a1011

    Untitled

    Abstract: No abstract text available
    Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHz, 125MHz 100MHz52

    100MHZ

    Abstract: 133MHZ 8MX32 WED3DL328V
    Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES             DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHZ, 125MHZ 100MHZ 100MHZ 133MHZ

    8Mx32

    Abstract: No abstract text available
    Text: 8M x 32 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 3280AsEDM4G04TC 72 Pin 8Mx32 EDO SODIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment General Description The 3280AsEDM4G04TC is a 8Mx32 bit, 4 chip, 3.3V, 72 Pin SODIMM module consisting of (4) 8Mx8


    Original     		PDF 3280AsEDM4G04TC 8Mx32 DS584-0

    Untitled

    Abstract: No abstract text available
    Text: FMD4B32LBx–30Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–30Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008


    Original     		PDF FMD4B32LBxâ 8Mx32)

    512MB 8Mx32 DDR DRAM

    Abstract: No abstract text available
    Text: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		PDF SU5320835D4F0CU SM5320835D4F0CG SB5320835D4F0CG 8Mx32 100-pin 8Mx16 DDR266A, 512MB 8Mx32 DDR DRAM

    DRAM 8Mx32 tsop

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits KMM332F803B 72-pin DRAM 8Mx32 tsop

    Untitled

    Abstract: No abstract text available
    Text: SU532083574F0BP May 11, 2005 Ordering Information Part Numbers Description SM532083574F0BP 8Mx32 32MB , SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, PC100, CL 2.0 & 3.0, 25.40mm. SG532083574F0BP 8Mx32 (32MB), SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, PC100,


    Original     		PDF SU532083574F0BP SM532083574F0BP SG532083574F0BP 8Mx32 100-pin 8Mx16 PC100,

    328006EDM4G04TC

    Abstract: 4096-cycle
    Text: 8M x 32 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 32800sEDM4G04TC 72 Pin 8Mx32 EDO SODIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment General Description The 32800sEDM4G04TC is a 8Mx32 bit, 4 chip, 3.3V, 72 Pin SODIMM module consisting of (4) 4Mx16


    Original     		PDF 32800sEDM4G04TC 8Mx32 DS613-0 328006EDM4G04TC 4096-cycle

    Untitled

    Abstract: No abstract text available
    Text: FMD4B32LBx–37Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–37Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008


    Original     		PDF FMD4B32LBxâ 8Mx32)

    Untitled

    Abstract: No abstract text available
    Text: CMS4S32LAx–75xx 256M 8Mx32 Low Power SDRAM 2 pcs of 128Mb components Revision 0.3 Dec. 2006 Rev. 0.3, Dec. CMS4S32LAx–75xx Document Title 256M(8Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft


    Original     		PDF CMS4S32LAxâ 8Mx32) 128Mb 800uA 900uA

    HYM532814CM

    Abstract: HY5117404C HYM532814C HYM532814CMG
    Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM532814C 8Mx32 8Mx32-bit HY5117404C HYM532814CM HYM532814CMG 72-Pin

    HYM532810BM

    Abstract: HY5117400B HYM532810B HYM532810BMG
    Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		PDF HYM532810B 8Mx32 8Mx32-bit HY5117400B HYM532810BM HYM532810BMG 72-Pin

    HY5117404C

    Abstract: HYM532814C HYM532814CM HYM532814CMG HYM532814
    Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM532814C 8Mx32 8Mx32-bit HY5117404C HYM532814CM HYM532814CMG 72-Pin HYM532814

    HY5117400C

    Abstract: HYM532810C HYM532810CM HYM532810CMG dec97
    Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		PDF HYM532810C 8Mx32 8Mx32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pin dec97

    HYM532814BM

    Abstract: HY5117404B HYM532814B
    Text: HYM532814B M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM532814B 8Mx32 8Mx32-bit HY5117404B HYM532814BM HYM532814BMG 72-Pin

    8mx32 simm 72 pin

    Abstract: 8Mx32 dram simm 4Mx4 dram simm 328006ES52T16JD simm EDO 72pin
    Text: 8M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 328006ES52T16JD 72 Pin 8Mx32 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Extended Dataout (EDO) access.


    Original     		PDF 328006ES52T16JD 8Mx32 DS311- 8mx32 simm 72 pin 8Mx32 dram simm 4Mx4 dram simm simm EDO 72pin

    Untitled

    Abstract: No abstract text available
    Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		PDF HYM532810C 8Mx32 8Mx32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pin

    328006-S52T16JD

    Abstract: 8mx32 simm 72 pin 4Mx4 2 CHIP dram simm FPM DRAM 30-pin SIMM
    Text: 8M x 32 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 328006-S52T16JD 72 Pin 8Mx32 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Fast Page Mode


    Original     		PDF 328006-S52T16JD 8Mx32 DS311- 8mx32 simm 72 pin 4Mx4 2 CHIP dram simm FPM DRAM 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits 72-pin

    Untitled

    Abstract: No abstract text available
    Text: »"HYUNDAI > • H YM 5 3281 4B M -S eries 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, SV, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.1 uF and 0.01 nF


    OCR Scan     		PDF 8Mx32 HYM532814B 8Mx32-bit HY5117404B HYM532814BM HYM532814BMG 72-Pin 256ms DQ0-DQ31) 18-f/-0