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    8Q DIODE Search Results

    8Q DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    8Q DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ24xxxQGXxxx 90W 2250V dc Quarter-brick Outputs Max Power Isolation DC-DC Converter A 8V O 1. IN 6V -3 18 IQ 24 01 8Q G C3 2N RS -G The InQor quarter-brick converter series is composed of next-generation, board-mountable, isolated,


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    IQ24xxxQGXxxx 8-36V PDF

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    Abstract: No abstract text available
    Text: Technical Specification IQ1BxxxQTXxxx Continuous Input Transient Input Outputs 150W 3000V dc Max Power Quarter-brick REINFORCED DC-DC Converter Insulation 40 TC 8V O 8Q 1. 01 IN V 60 1B -1 66 IQ UT N RS -G The InQor quarter-brick converter series is composed


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    6-160V PDF

    IQ4H120QTx13

    Abstract: IQ4H050QTx30 IQ4H120 IQ4H033
    Text: Technical Specification IQ4HxxxQTXxxx 156W Outputs Max Power 4250Vdc Quarter-brick Reinforced Insulation DC-DC Converter • • • • UT 8V O 1. IN 5V 42 18 Operational Features 0- IQ 4H 01 8Q TC 30 N RS -G The InQor quarter-brick converter series is composed


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    4250Vdc IQ4H120QTx13 IQ4H050QTx30 IQ4H120 IQ4H033 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ48xxxQTXxxx 100V 1.8-48V 150W 2250V dc Quarter-brick Outputs Max Power Isolation DC-DC Converter Continuous Input Transient Input @ UT 8V O 1. 01 5V 48 -7 34 IQ IN 8Q TC 40 N 40 RS -G The InQor quarter-brick converter series is composed


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    IQ48xxxQTXxxx 4-75V PDF

    IQ90120QMx04

    Abstract: IQ90480QMx01
    Text: Technical Specification IQ90xxxQMXxxx 34-160V 1.8-48V 50W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Isolation DC-DC Converter A 25 @ C2 M 8V O 1. 8Q IN 01 V 60 90 -1 34 IQ UT 5N RS -G The InQor quarter-brick converter series is composed


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    IQ90xxxQMXxxx 4-160V 3000Vdc IQ90120QMx04 IQ90480QMx01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ UT 8V O 1. 01 V 35 64 -1 18 IQ IN 8Q TC 36 N RS -G The InQor quarter-brick converter series is composed


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    IQ64xxxQTXxxx 8-135V 3000Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ24xxxQTXxxx 50V 1.8-48V 120W 2250V dc Quarter-brick Outputs Max Power Isolation DC-DC Converter Continuous Input Transient Input @ UT 8V O 1. 01 6V 24 -3 18 IQ IN 8Q TC 40 N 40 RS -G The InQor quarter-brick converter series is composed


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    IQ24xxxQTXxxx 8-36V 005-IQ24QTX PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ48xxxQGXxxx 100V 1.8-48V 110W 2250V dc Quarter-brick Outputs Max Power Isolation DC-DC Converter Continuous Input Transient Input 32 @ C3 G 8V O 8Q 1. 01 IN 5V 48 -7 34 IQ UT 2N RS -G The InQor quarter-brick converter series is composed


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    IQ48xxxQGXxxx 4-75V PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ24xxxQTXxxx 50V Continuous Input Transient Input 1.8-48V 120W 2250V dc Quarter-brick Outputs Max Power Isolation DC-DC Converter 40 @ UT 8V O 1. IN 6V -3 18 IQ 24 01 8Q TC 40 N RS -G The InQor quarter-brick converter series is composed


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    IQ24xxxQTXxxx 8-36V 005-IQ24QTX PDF

    34-75V

    Abstract: No abstract text available
    Text: Technical Specification IQ48xxxQGXxxx 100V Continuous Input Transient Input 1.8-48V 110W 2250V dc Quarter-brick Outputs Max Power Isolation DC-DC Converter 32 @ UT 8V O 1. IN 5V -7 34 IQ 48 01 8Q G C3 2N RS -G The InQor quarter-brick converter series is composed


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    IQ48xxxQGXxxx 4-75V 34-75V PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ 36 TC 8V O 8Q 1. 01 IN V 35 64 -1 18 IQ UT N RS -G The InQor quarter-brick converter series is composed


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    IQ64xxxQTXxxx 8-135V 3000Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ90xxxQMXxxx 34-160V 1.8-48V 50W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Isolation DC-DC Converter A 25 @ C2 M 8V O 1. 8Q IN 01 V 60 90 -1 34 IQ UT 5N RS -G The InQor quarter-brick converter series is composed


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    IQ90xxxQMXxxx 4-160V 3000Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ32xxxQTXxxx 100V 1.8-48V 86W 2250V dc Quarter-brick Outputs Max Power Insulation DC-DC Converter Continuous Input Transient Input @ UT 8V O 1. IN V 75 9- IQ 32 01 8Q TC 35 N 35 RS -G The InQor quarter-brick converter series is composed


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    IQ32xxxQTXxxx PDF

    34-75V

    Abstract: No abstract text available
    Text: Technical Specification IQ48xxxQTXxxx 100V Continuous Input Transient Input 1.8-48V 150W 2250V dc Quarter-brick Outputs Max Power Isolation DC-DC Converter 40 @ UT 8V O 1. IN 5V -7 34 IQ 48 01 8Q TC 40 N RS -G The InQor quarter-brick converter series is composed


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    IQ48xxxQTXxxx 4-75V 34-75V PDF

    VN1304N2

    Abstract: VN1306N2 VN1310N3
    Text: ^ VN1304 ¿¿rsiLi N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) Order Number / Package BVdgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A


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    VN1304 O-243AA* VN1310N8 VN1304N2 VN1306N2 VN1310N2 VN1304N3 VN1306N3 VN1310N3 VN1304/VN1306/VN1310 VN1310N3 PDF

    smd diode code T7

    Abstract: smd diode code marking 33A smd diode S6 41 diode s6 65a Diode smd code PJ 47 smd diode code PJ pj 83 diode smd IQO J331 smd marking code pj
    Text: PD-9.1008 International S Rectifier IRF720S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 400V RDS on = 1-8Q


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    IRF720S SMD-220 37D88 47014S4. 071ft smd diode code T7 smd diode code marking 33A smd diode S6 41 diode s6 65a Diode smd code PJ 47 smd diode code PJ pj 83 diode smd IQO J331 smd marking code pj PDF

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor LM4755 Stereo 11W Audio Power Amplifier with Mute • Closed loop gain The LM4755 is a stereo audio amplifier capable of delivering 11W per channel of continuous average output power to a 4Q load or 7W per channel into 8Q using a single 24V supply


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    LM4755 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSS 159 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type BSS 159 ^DS 50 V b 0.16 A ^DS on 8Q Package Ordering Code SOT-23 Q67000-S321 Maximum Ratings Parameter Symbol Drain source voltage


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    OT-23 Q67000-S321 BSS159 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IX Y S Fast Recovery Epitaxial Diode FRED DSEI120 IFAVM RRM rr 130 A 600 V 35 ns Preliminary data v V RRM RSM V c * 600 DSE1120-06A Symbol Test Conditions N rms T ,j ★ Maximum Ratings — * l"v jM 250 130 tbd A A A ^FRM Tc = 8Q°C; rectangular, d = 0.5


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    DSEI120 O-247 DSE1120-06A 5582A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET IRL640 FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive = 0.1 8Q ♦ Avalanche Rugged Technology ^ D S o n ♦ Rugged Gate Oxide Technology lD = 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area


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    IRL640 PDF

    VP0106N2

    Abstract: VP01A VP0109ND
    Text: 0 Supertex inc. /p \ ^ VP 01A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDss1 Order Number / Package RdS ON *D(ON| b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8£2 8Q 8a -0.5A VP0104N2 VP0104N9 VP0104N3


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    VP0104N2 VP0106N2 VP0109N2 VP0104N9 VP0106N9 VP0109N9 VP0104N3 VP0106N3 VP0109N3 O-220 VP01A VP0109ND PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET IRL640A FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive = 0.1 8Q ♦ Avalanche Rugged Technology ^ D S o n ♦ Rugged Gate Oxide Technology lD = 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area


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    IRL640A PDF

    ADG201BP

    Abstract: ADG201-series ADG201CJ ADG201AP DG201 314S adg201c ADG201 adg201b
    Text: ANALOG DEVICES DI CMOS Protected Quad SPST Analog Switch FEATURES Latch-Proof Dl CM OS Overvoltage Proof to 25V Beyond Supplies Superior DG201 Replacement Break-Before Make Switching Action Low R o n : 8QÌ2 Low Power Dissipation: 30mW max Direct T T L or CM OS Interfacing


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    DG201 ADG201 102mml ADG201BP ADG201-series ADG201CJ ADG201AP 314S adg201c adg201b PDF

    VP0106N5

    Abstract: VP0104N5 VP0109N2 VP0109N5 VP0104N2 VP0106N2 VP0109N9 cmo60 VP0109ND vp0106N3
    Text: _ =JJJi — _ — " ^ VP0104 VP0106 VPQ 1Q Q ^ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8Q -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5


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    VP0104 VP0106 VP0104N2 VP0106N2 VP0109N2 VP0104N9 VP0106N9 VP0109N9 VP0104N3 VP0106N3 VP0106N5 VP0104N5 VP0109N5 cmo60 VP0109ND PDF