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    IRL640 Search Results

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    IRL640 Price and Stock

    onsemi IRL640A

    MOSFET N-CH 200V 18A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL640A Tube 78,343 1
    • 1 $2.41
    • 10 $2.41
    • 100 $2.41
    • 1000 $0.77845
    • 10000 $0.67825
    		Buy Now
    Verical IRL640A 500 284
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.275
    • 10000 $1.275
    		Buy Now
    Arrow Electronics IRL640A 14,275 1
    • 1 $0.8404
    • 10 $0.8404
    • 100 $0.6711
    • 1000 $0.5906
    • 10000 $0.5499
    		Buy Now
    IRL640A 1 99 Weeks 1
    • 1 $0.9135
    • 10 $0.9135
    • 100 $0.6755
    • 1000 $0.5744
    • 10000 $0.5257
    		Buy Now
    Rochester Electronics IRL640A 500 1
    • 1 $1.13
    • 10 $1.13
    • 100 $1.06
    • 1000 $0.9605
    • 10000 $0.9605
    		Buy Now
    ComSIT USA IRL640A 45
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Siliconix IRL640STRRPBF

    MOSFET N-CH 200V 17A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL640STRRPBF Cut Tape 3,980 1
    • 1 $3.93
    • 10 $2.581
    • 100 $3.93
    • 1000 $3.93
    • 10000 $3.93
    		Buy Now
    IRL640STRRPBF Digi-Reel 3,980 1
    • 1 $3.93
    • 10 $2.581
    • 100 $3.93
    • 1000 $3.93
    • 10000 $3.93
    		Buy Now
    IRL640STRRPBF Reel 3,200 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.41073
    • 10000 $1.32375
    		Buy Now

    Vishay Siliconix IRL640SPBF

    MOSFET N-CH 200V 17A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL640SPBF Tube 3,555 1
    • 1 $3.03
    • 10 $3.03
    • 100 $3.03
    • 1000 $1.01473
    • 10000 $0.9265
    		Buy Now

    Vishay Siliconix IRL640STRLPBF

    MOSFET N-CH 200V 17A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL640STRLPBF Digi-Reel 3,070 1
    • 1 $3.03
    • 10 $1.962
    • 100 $3.03
    • 1000 $3.03
    • 10000 $3.03
    		Buy Now
    IRL640STRLPBF Cut Tape 3,070 1
    • 1 $3.03
    • 10 $1.962
    • 100 $3.03
    • 1000 $3.03
    • 10000 $3.03
    		Buy Now
    IRL640STRLPBF Reel 2,400 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.03995
    • 10000 $0.9265
    		Buy Now
    Quest Components IRL640STRLPBF 13
    • 1 $2.375
    • 10 $2.185
    • 100 $1.9
    • 1000 $1.9
    • 10000 $1.9
    		Buy Now
    New Advantage Corporation IRL640STRLPBF 8,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.14
    • 10000 $1.06
    		Buy Now

    Vishay Siliconix IRL640PBF-BE3

    MOSFET N-CH 200V 17A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL640PBF-BE3 Tube 990 1
    • 1 $3.2
    • 10 $3.2
    • 100 $3.2
    • 1000 $1.0832
    • 10000 $1
    		Buy Now
    Find more IRL640 price and stock on Findchips.com

    IRL640 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRL640 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-220AB Original PDF
    IRL640 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL640 International Rectifier N-CHANNEL HEXFET Power MOSFET Scan PDF
    IRL640 International Rectifier HEXFET Power MOSFET Scan PDF
    IRL640 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 200V, 17A, Pkg Style TO-220AB Scan PDF
    IRL640 Unknown FET Data Book Scan PDF
    IRL640 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL640 Samsung Electronics N-Channel Logic Level MOSFETS Scan PDF
    IRL640A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRL640A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220 Original PDF
    IRL640A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL640L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-262 Original PDF
    IRL640L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL640PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-220AB Original PDF
    IRL640PBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Scan PDF
    IRL640S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRL640S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A D2PAK Original PDF
    IRL640S Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL640S International Rectifier N-CHANNEL HEXFET Power MOSFET Scan PDF
    IRL640S International Rectifier HEXFET Power MOSFET Scan PDF

    IRL640 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL640

    Abstract: SiHL640 SiHL640-E3
    Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRL640 SiHL640-E3

    Untitled

    Abstract: No abstract text available
    Text: IRL640_RC, SiHL640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL640 SiHL640 AN609, CONFIGURATIp-10 4514m 1503m 9659m 8331m

    IRL640S

    Abstract: SMD-220 S10 SMD MARKING
    Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRL640S, SiHL640S SMD-220 2002/95/EC 11-Mar-11 IRL640S SMD-220 S10 SMD MARKING

    Untitled

    Abstract: No abstract text available
    Text: PD- 95585 IRL640SPbF • Lead-Free Document Number: 91306 07/20/04 www.vishay.com 1 IRL640SPbF Document Number: 91306 www.vishay.com 2 IRL640SPbF Document Number: 91306 www.vishay.com 3 IRL640SPbF Document Number: 91306 www.vishay.com 4 IRL640SPbF Document Number: 91306


    Original     		PDF IRL640SPbF 08-Mar-07

    SiHL640S

    Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c
    Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL640S, SiHL640S SMD-220 SMD-220 18-Jul-08 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c

    IRL640

    Abstract: IRL640 equivalent SiHL640 SiHL640-E3
    Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL640, SiHL640 O-220 O-220 18-Jul-08 IRL640 IRL640 equivalent SiHL640-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 94964 IRL640PbF • Lead-Free 1 IRL640PbF 2 IRL640PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


    Original     		PDF IRL640PbF O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: PD - 94964 IRL640PbF • Lead-Free www.irf.com 1 01/30/04 IRL640PbF 2 www.irf.com IRL640PbF www.irf.com 3 IRL640PbF 4 www.irf.com IRL640PbF www.irf.com 5 IRL640PbF 6 www.irf.com IRL640PbF www.irf.com 7 IRL640PbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRL640PbF O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: PD- 95585 IRL640SPbF • Lead-Free Document Number: 91306 07/20/04 www.vishay.com 1 IRL640SPbF Document Number: 91306 www.vishay.com 2 IRL640SPbF Document Number: 91306 www.vishay.com 3 IRL640SPbF Document Number: 91306 www.vishay.com 4 IRL640SPbF Document Number: 91306


    Original     		PDF IRL640SPbF 12-Mar-07

    R/IRL640A

    Abstract: No abstract text available
    Text: IRL640A N-Channel Logic Level A-FET 200 V, 18 A, 180 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize


    Original     		PDF IRL640A R/IRL640A

    IRL640

    Abstract: No abstract text available
    Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRL640, SiHL640 O-220 O-220 12-Mar-07 IRL640

    AN609

    Abstract: IRL640S
    Text: IRL640S_RC, SiHL640S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL640S SiHL640S AN609, 8292m 0633m 4369m 5016m 2686m 2196m 8257m AN609

    Untitled

    Abstract: No abstract text available
    Text: PD - 94964 IRL640PbF • Lead-Free Document Number: 91305 01/30/04 www.vishay.com 1 IRL640PbF Document Number: 91305 www.vishay.com 2 IRL640PbF Document Number: 91305 www.vishay.com 3 IRL640PbF Document Number: 91305 www.vishay.com 4 IRL640PbF Document Number: 91305


    Original     		PDF IRL640PbF O-220AB 12-Mar-07

    irfl640

    Abstract: IRL640 part marking ab SiHL640 SiHL640-E3
    Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRL640, SiHL640 O-220 O-220 18-Jul-08 irfl640 IRL640 part marking ab SiHL640-E3

    Untitled

    Abstract: No abstract text available
    Text: PD- 95585 IRL640SPbF • Lead-Free www.irf.com 1 07/20/04 IRL640SPbF 2 www.irf.com IRL640SPbF www.irf.com 3 IRL640SPbF 4 www.irf.com IRL640SPbF www.irf.com 5 IRL640SPbF 6 www.irf.com IRL640SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original     		PDF IRL640SPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: IRL640S A d v a n c e d Power MOSFET FEATURES B V dss = 200 V ^ D S o n = 0 .1 8 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL640S

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1089 International k ?r Rectifier IRL640 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    OCR Scan     		PDF IRL640 O-220

    R/1RL640A

    Abstract: No abstract text available
    Text: IRL640A A d van ced Power MOSFET FEATURES BV,DSS = 200 V • ■ ■ ■ ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max. @ VOS= 200V


    OCR Scan     		PDF IRL640A O-220 1RL640A R/1RL640A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET IRL640 FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive = 0.1 8Q ♦ Avalanche Rugged Technology ^ D S o n ♦ Rugged Gate Oxide Technology lD = 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL640

    IRL640A

    Abstract: No abstract text available
    Text: IRL640A A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL640A IRL640A

    Untitled

    Abstract: No abstract text available
    Text: IRL640S A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL640S

    IRL640

    Abstract: IRF1010 IRL640A 91089
    Text: PD-9.1089 International H ü Rectifier IRL640 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF IRL640 O-220 T0-220 200Vas I0B83) D-6380 IRL640 IRF1010 IRL640A 91089

    Untitled

    Abstract: No abstract text available
    Text: IRL640A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive ■ Avalanche Rugged Technology ^DS on = 0 .1 8 ÎÎ ■ Rugged Gate Oxide Technology lD = 18 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area


    OCR Scan     		PDF IRL640A T0-220 IRLW/I640A 71b4142 003b32fl 3b321 00M1N 71b414E DD3b33D