L7667mja
Abstract: 7705302EA 8100622E 5962-8766001GC 5962-8877002PA L7667 5962-8987701EA 5962-87802012c DG405AZ MX7572SM
Text: SCOPE: +8V-CHANNEL/DUAL 4-CHANNEL MONOLITHIC CMOS, ANALOG MULTIPLEXER Device Type 01 Generic Number MAX358M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter MAXIM SMD JE E LP 2 Mil-Std-1835 Case Outline
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MAX358M
/883B
Mil-Std-1835
GDIP1-T16
CDIP2-T16
CQCC1-N20
20-Pin
040SM
8100620EA
L7667mja
7705302EA
8100622E
5962-8766001GC
5962-8877002PA
L7667
5962-8987701EA
5962-87802012c
DG405AZ
MX7572SM
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5962-8980501CA
Abstract: 8100622EA DG201S m5959 8100616EA 7705203E 932540 5962-8686102XC 5962-8987701EA 5962-8948102va
Text: SCOPE: +8V-CHANNEL/DUAL 4-CHANNEL MONOLITHIC CMOS, ANALOG MULTIPLEXER Device Type 01 Generic Number MAX358M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter MAXIM SMD JE E LP 2 Mil-Std-1835 Case Outline
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MAX358M
/883B
Mil-Std-1835
GDIP1-T16
CDIP2-T16
CQCC1-N20
20-Pin
616EA
IH5047MJE/883B
5962-8980501CA
8100622EA
DG201S
m5959
8100616EA
7705203E
932540
5962-8686102XC
5962-8987701EA
5962-8948102va
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A5SHB
Abstract: No abstract text available
Text: MOSFET SMD Type P-Channel MOSFET KI2305 DS SOT-23-3 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features ● VDS V = -8V ● RDS(ON)＜0.108 Ω (VGS = -1.8V) 1 D 0.55 ● RDS(ON)＜0.071 Ω (VGS = -2.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON)＜0.052 Ω (VGS = -4.5V)
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KI2305
OT-23-3
A5SHB
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KRF7410
Abstract: mosfet 407 P-Channel 1.8V MOSFET
Text: IC IC SMD Type HEXFET Power MOSFET KRF7410 Features Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS -20 V Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID -16
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KRF7410
KRF7410
mosfet 407
P-Channel 1.8V MOSFET
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A08K
Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4
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KO3416
OT-23-3
A08K
a08k transistor
SMD TRANSISTOR mosfet marking pd
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Untitled
Abstract: No abstract text available
Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance 2 +0.1
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2N7002K
OT-23
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702 TRANSISTOR smd
Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance
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2N7002K
OT-23
702 TRANSISTOR smd
702 TRANSISTOR smd SOT23
70.2 TRANSISTOR smd
702 5 TRANSISTOR smd
DIODE smd marking 702
smd transistor 702
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Complementary N- and P-Channel MOSFET Half-Bridge KI4501ADY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25
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KI4501ADY
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PD54003L
Abstract: No abstract text available
Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%
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DB-54003L-175A
PD54003L
175MHz
DB-54003L-175A
DB-54003-470
PD54003
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1uF, 50V, AVX Corporation
Abstract: CAPACITOR SMD 16v 220 u 12105C475KAT2A visteon 20R0 SMD RESISTANCE power supply 100v 30a schematic schematic diagram PWM 12V 30a mccoy on semiconductor zener 13v smd
Text: ON Semiconductor Confidential – NDA Required Design Note – DN06056/D Power Supply For Audio Class D Amplifier Device CS51221 Application Input Voltage Output Voltage Output Current Topology Audio 7.6-45 V 18V 8.3A Boost Table 1: CS51221 Audio Power Supply
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DN06056/D
CS51221
CS51221
1uF, 50V, AVX Corporation
CAPACITOR SMD 16v 220 u
12105C475KAT2A
visteon
20R0 SMD RESISTANCE
power supply 100v 30a schematic
schematic diagram PWM 12V 30a
mccoy
on semiconductor
zener 13v smd
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diode 018 smd
Abstract: idm 73
Text: IC IC SMD Type P-Channel 1.8-V G-S MOSFET KI4403BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V Continuous Drain Current (TJ=150 ) * TA=25
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KI4403BDY
diode 018 smd
idm 73
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Dual N-Channel Enhancement Mode MOSFET FTD2019 TSSOP-8 • Features Unit: mm ● RDS ON =28mΩ Max. @VGS=4V ● RDS(ON)=35mΩ Max. @VGS=2.5V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2
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FTD2019
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type Dual N-Channel Enhancement Mode MOSFET FTD2011 TSSOP-8 • Features Unit: mm ● RDS ON =30mΩ Max. @VGS=4V ● RDS(ON)=45mΩ Max. @VGS=2.5V D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2
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FTD2011
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9926b
Abstract: No abstract text available
Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY • Features SOP-8 ● RDS on = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol
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SI9926BDY
9926B
9926b
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type Dual P-Channel 1.8-V G-S MOSFET KI5905DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current 5 secs -8 4.1
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KI5905DC
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P Channel Low Gate Charge
Abstract: KTHD3100C
Text: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25
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KTHD3100C
P Channel Low Gate Charge
KTHD3100C
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TSSOP-8 footprint
Abstract: KI8205A g1 smd transistor SMD TRANSISTOR G1 MOSFET TSSOP-8 dual n-channel smd transistor S1 1A smd mosfet 78 DIODE SMD MOSFET TSSOP-8 smd diode JC
Text: MOSFET SMD Type Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Features Unit: mm ● Small footprint due to small and thin package ● Low drain-source ON resistance: r DS on = 0.025 @ VGS = 4.5 V Max rDS(on) = 0.029 @ VGS = 2.5V Max
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KI8205A
TSSOP-8 footprint
KI8205A
g1 smd transistor
SMD TRANSISTOR G1
MOSFET TSSOP-8 dual n-channel
smd transistor S1
1A smd mosfet
78 DIODE SMD
MOSFET TSSOP-8
smd diode JC
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smd diode S2
Abstract: S16G1 POWER MOSFET Rise Time 1 ns 1A smd mosfet equivalent smd mosfet KI8205T 8v smd mosfet DIODE S2 mosfet smd mpf164
Text: MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS on . Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 G1 S1 1 6 G1 D1/D2 2 5 D1/D2 S2 3 4 G2 G2 S1 S2 Absolute Maximum Ratings Ta = 25
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KI8205T
250uA
smd diode S2
S16G1
POWER MOSFET Rise Time 1 ns
1A smd mosfet
equivalent smd mosfet
KI8205T
8v smd mosfet
DIODE S2
mosfet smd
mpf164
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Features Unit: mm 6.5 A, 20 V. rDS on = 0.025 @ VGS = 4.5 V rDS(on) = 0.029 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage
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KI8205A
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type N-Channel 2.5-V G-S MOSFET KI5406DC Features TrenchFET Power MOSFETS: 2.5-V Rated Low Thermal Resistance Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150
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KI5406DC
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features SOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 G1 D2 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter
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SI9926DY
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features TSSOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V Unit: mm ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2
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SI9926DY
9926D
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type P-Channel 20-V D-S MOSFET KI5447DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 )* TA = 25 ID Maximum Power Dissipation *
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KI5447DC
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type P-Channel 12-V D-S MOSFET KI4453DY Features TrenchFET Power MOSFETS Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 TA = 25 )*
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KI4453DY
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