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    PD54003L Search Results

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    PD54003L Price and Stock

    STMicroelectronics PD54003L-E

    RF MOSFET LDMOS 7.5V POWERFLAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PD54003L-E Cut Tape 1
    • 1 $5.37
    • 10 $5.37
    • 100 $5.37
    • 1000 $5.37
    • 10000 $5.37
    		Buy Now
    PD54003L-E Digi-Reel 1
    • 1 $5.37
    • 10 $5.37
    • 100 $5.37
    • 1000 $5.37
    • 10000 $5.37
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    PD54003L-E Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $4.885
    		Buy Now
    Bristol Electronics PD54003L-E 1,205 1
    • 1 $9.828
    • 10 $4.914
    • 100 $4.2585
    • 1000 $4.0295
    • 10000 $4.0295
    		Buy Now
    Quest Components PD54003L-E 884
    • 1 $13.1625
    • 10 $13.1625
    • 100 $13.1625
    • 1000 $4.6069
    • 10000 $4.6069
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    PD54003L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD54003L STMicroelectronics RF Power Transistor Original PDF
    PD54003L STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD54003L-E STMicroelectronics RF Power Transistors The LdmoST Plastic FAMILY Original PDF
    PD54003L-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANSISTOR RF 5X5 POWERFLAT Original PDF

    PD54003L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD54003L

    Abstract: DB-54003L-235
    Text: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■


    Original     		PDF DB-54003L-235 PD54003L 235MHz DB-54003L-235

    W316

    Abstract: Diode W316
    Text: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512 W316 Diode W316

    smd c8f

    Abstract: A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01
    Text: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm


    Original     		PDF STEVAL-TDR001V1 PD84001 PD54003L-E STEVAL-TDR001V1 smd c8f A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01

    DB-54003L-175

    Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Text: DB-54003L-175 RF power amplifier using 1x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5 V ■ Output power: > 5 W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-175 PD54003L DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L

    DB-55008L-880

    Abstract: PD54003L
    Text: DB-55008L-880 schematic 1+ MSub R3 D1 C12 B2 C13 2- + C14 B1 Vcc FR4 H=60 mil R2 C10 C11 L1 R1 C5 C6 TL4 C2 RFin TL1 C1 C3 TL2 TL3 C4 LDMOS PD54003L C7 TL5 C8 TL6 C9 TL7 RFout


    Original     		PDF DB-55008L-880 PD54003L PD54003L

    DB-54003L-175

    Abstract: PD54003L
    Text: DB-54003L-175 schematic 1+ 2- R2 B2 MSub C3 C4 + B1 FR4 H=60 mil C5 Vcc C1 C2 D1 R1 L2 L1 C9 TL4 C8 RFin TL1 C6 TL2 L3 TL3 LDMOS PD54003L C10 TL5 L4 C11 TL6 C7 TL7 RFout


    Original     		PDF DB-54003L-175 PD54003L PD54003L

    BZX284C5V1

    Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Text: DB-54003L-175A RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175 MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		PDF DB-54003L-175A PD54003L DB-54003L-175A BZX284C5V1 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L

    Diode W316

    Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
    Text: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512 Diode W316 102J EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460

    JESD97

    Abstract: J-STD-020B PD54003L-E STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING
    Text: PD54003L-E RF Power Transistors The LdmoST Plastic FAMILY Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 3W WITH 20 dB GAIN @ 500MHz ■ NEW RF PLASTIC PACKAGE ■ EDS PROTECTION ■ SUPPLIED IN TAPE & REEL OF 3K UNITS


    Original     		PDF PD54003L-E 500MHz 2002/93/EC PD54003L-E JESD97 J-STD-020B STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING

    panasonic inductor date code

    Abstract: PD54003L C17AH DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH
    Text: DB-54003L-175A RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 155 - 175 MHz SUPPLY VOLTAGE


    Original     		PDF DB-54003L-175A PD54003L DB-54003L-175A panasonic inductor date code PD54003L C17AH EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH

    st 54003

    Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
    Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


    Original     		PDF PD54003L-E 2002/95/EC PD54003L-E st 54003 TRANSISTOR AO SMD MARKING J-STD-020B

    j655

    Abstract: 151j CAPACITOR grm42-6 cog 101 DB-54003L-235 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW
    Text: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■


    Original     		PDF DB-54003L-235 PD54003L 235MHz DB-54003L-235 j655 151j CAPACITOR grm42-6 cog 101 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW

    Untitled

    Abstract: No abstract text available
    Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


    Original     		PDF PD54003L-E 2002/95/EC PD54003L-E

    PD54003L

    Abstract: No abstract text available
    Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		PDF DB-54003L-175A PD54003L 175MHz DB-54003L-175A DB-54003-470 PD54003

    DB-54003L-880

    Abstract: PD54003L
    Text: DB-54003L-880 schematic 1+ MSub R3 D1 C12 B2 C13 2- + C14 B1 Vcc FR4 H=60 mil R2 C10 C11 L1 R1 C5 C6 TL4 C2 RFin TL1 C1 C3 TL2 TL3 C4 LDMOS PD54003L C7 TL5 C8 TL6 C9 TL7 RFout


    Original     		PDF DB-54003L-880 PD54003L PD54003L

    COG 100

    Abstract: 104k x7r 50 capacitor 104k x7r 50 39 capacitor GRM42-6 COG 104K capacitor 104k 104k x7r 100 47 uf capacitor GRM42-6
    Text: DB-54003L-235 BOM Component ID Description Manufacturer Part Code B1 B2 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9, C10 C11 D1 L1 L2 L3 R1 R2 R3 R4 TL1 TL2 TL3 TL4 TL5 TL6 TL7 PD54003L Board Ferrite Bead Value Case size PANASONIC EXCELDRC35C Ferrite Bead PANASONIC EXCELDRC35C


    Original     		PDF DB-54003L-235 PD54003L EXCELDRC35C GRM42-6 EEVHB1V100P 221JW COG 100 104k x7r 50 capacitor 104k x7r 50 39 capacitor GRM42-6 COG 104K capacitor 104k 104k x7r 100 47 uf capacitor

    zener diode 5.1 v

    Abstract: 3214W-1-103E DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE 8r2 diode diode h60
    Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE 7.5 V OUTPUT POWER 2.5 W POWER GAIN


    Original     		PDF DB-54003L-880 PD54003L DB-54003L-880 zener diode 5.1 v 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE 8r2 diode diode h60

    DB-54003L-470

    Abstract: JESD97 PD54003L-E PD54003L
    Text: DB-54003L-470 RF POWER amplifier using 1 x PD54003L-E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 57% - 61% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-470 PD54003L-E 470MHz DB-54003L-470 JESD97 PD54003L-E PD54003L

    J-STD-020B

    Abstract: PD54003L st 54003
    Text: PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 20 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION


    Original     		PDF PD54003L PD54003L J-STD-020B st 54003

    3214W-1-103E

    Abstract: DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes
    Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-54003L-880 PD54003L DB-54003L-880 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes

    100B Zener

    Abstract: No abstract text available
    Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-54003L-880 PD54003L DB-54003L-880 PD54003L 100B Zener

    LDMOS

    Abstract: diode c12 diode C2 C4 diode transistor C3 diode r4 C3 diode CIRCUIT C1 diode PD54003L
    Text: DB-54003L-235 Test circuit Test circuit schematic 1+ MSub R1 D1 FR4 H=60 mil C3 B2 C4 2- + C5 B1 Vcc R2 C2 C1 C10 L1 R3 L3 R4 L2 TL4 LDMOS PD54003L RFin TL1 C6 TL2 C7 TL3 C8 TL5 C9 TL6 C11 C12 TL7 RFout


    Original     		PDF DB-54003L-235 PD54003L LDMOS diode c12 diode C2 C4 diode transistor C3 diode r4 C3 diode CIRCUIT C1 diode PD54003L

    Untitled

    Abstract: No abstract text available
    Text: PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O


    Original     		PDF PD54003L PD54003L

    Untitled

    Abstract: No abstract text available
    Text: PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 20 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION


    Original     		PDF PD54003L PD54003L