LS7566R-TS
Abstract: 7566R-122205-1 A3800 LS7566R ls7566rts
Text: LSI/CSI UL LS7566R LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 December 2005 24-BIT x 4-AXES QUADRATURE COUNTER REGISTER DESCRIPTION: Following is a list of the hardware registers. There are four
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LS7566R
A3800
24-BIT
7566R-122205-1
LS7566R
MC68HC000
LS7566R-TS
7566R-122205-1
A3800
ls7566rts
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LS7566
Abstract: A3800 MC68HC000
Text: LSI/CSI UL LS7566 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 July 2005 24-BIT FOUR-AXES QUADRATURE COUNTER RS2 1 RS1 2 RS0 3 46 x1FLGa CHS1 4 45 INT/ CHS0 5 44 NC NC 6 43 GND NC 7 42 x1FLGb
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LS7566
A3800
24-BIT
LS7566
MC68HC000
A3800
MC68HC000
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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120D/01
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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ixf55n50
Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Text: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions
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125OC
100ms
ixf55n50
50N50
24 volts 100 amperes smps
9 NA STR 2005
125OC
eco-pac
PSMG50
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lcd 8X32
Abstract: QFP52 V6116 V6116V60TBA-3041 V6116V6WP11E V6116V6WP27E
Text: R EM MICROELECTRONIC - MARIN SA V6116 Digitally Programmable 2, 4 and 8 Mux LCD Driver Description The V6116 is a universal low multiplex LCD driver. The 2, 4 and 8 way multiplex is digitally programmable by the command byte. The display refresh is handled on chip via
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V6116
V6116
lcd 8X32
QFP52
V6116V60TBA-3041
V6116V6WP11E
V6116V6WP27E
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VID125-12P1
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1
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121T120
125-12P1
VID125-12P1
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ECO-TOP
Abstract: DWLP55-12
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/12* Preliminary Data Sheet S15 R15 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK
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81T120
75-12P1
ECO-TOP
DWLP55-12
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Untitled
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline
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25T60
50-06P1
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Untitled
Abstract: No abstract text available
Text: ECO-TOPTM 1 IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/12* Short Circuit SOA Capability Square RBSOA 33 A 1200 V 3.1 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 Symbol Conditions VCES TVJ = 25°C to 150°C
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42T120
50-12P1
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POWERSEM
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 50/06* Preliminary Data Sheet 48 A 600 V 2.3 V S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff A15 A7 A9 G15 V12 V13 N15 V9 V10
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42T60
75-06P1
POWERSEM
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PSBI 9
Abstract: IFAV25
Text: ECO-PACTM 1 Rectifier Module for Power Factor Correction PSBI 9/06 IFAV25 VRRM IC25 VCES Preliminary Data Sheet = 15A = 1200 V = 37A = 600 V Fast Single Phase Rectifier Ultra Fast Boost Chopper Typical Rectified Mains Power Pn = 900 W at Vn = 110 V Pn = 2100 W at Vn = 240 V
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IFAV25
IFAV80
PSBI 9
IFAV25
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data sheet str 6753
Abstract: STR 6753 NPC-1220 Setra System SILICONIX Si9801 STR G 6753 7805 Packaged TO-92 FPM-120PG LTC1407A-1 SR 7231
Text: 06.2005 Industrial Signal Chain High Performance Analog ICs Industrial systems demand semiconductors that are precise, flexible and reliable. Linear Technology offers a broad line of high performance analog ICs that simplify system design with rugged devices featuring
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D-73230
I-20156
SE-164
data sheet str 6753
STR 6753
NPC-1220
Setra System
SILICONIX Si9801
STR G 6753
7805 Packaged TO-92
FPM-120PG
LTC1407A-1
SR 7231
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DIODE smd marking 821
Abstract: BB145B CD 7640 BP317 smd marking 3263
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145B Low-voltage variable capacitance diode Product specification 1999 Dec 15 Philips Semiconductors Product specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145B is a planar technology
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M3D319
BB145B
BB145B
OD523
SC-79)
MBK441
125004/01/pp8
DIODE smd marking 821
CD 7640
BP317
smd marking 3263
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BB145
Abstract: DIODE Sp marking code BP317 943 vco st smd diode marking code str 4090
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 VCO variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145 is a planar technology
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M3D319
BB145
BB145
OD523
SC-79)
MBK441
OD523;
125004/01/pp8
DIODE Sp marking code
BP317
943 vco
st smd diode marking code
str 4090
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st smd diode marking code
Abstract: Philips MARKING CODE marking CODE R SMD DIODE philips 23 BB187 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB187 VHF variable capacitance diode Product specification Supersedes data of 1999 Sep 15 1999 Oct 19 Philips Semiconductors Product specification FEATURES DESCRIPTION • High linearity • Low series resistance.
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M3D319
BB187
BB187
OD523
SC-79)
125004/02/pp8
st smd diode marking code
Philips MARKING CODE
marking CODE R SMD DIODE
philips 23
BP317
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LP2996
Abstract: LP2996M LP2996MX LP2996LQ LP2996LQX LP2996MR LP2996MRX M08A
Text: General Description Features The LP2996 linear regulator is designed to meet the JEDEC SSTL-2 specifications for termination of DDR-SDRAM. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5A continuous current
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LP2996
LP2996
16-Lead
LQA16A
MRA08A
LP2996M
LP2996MX
LP2996LQ
LP2996LQX
LP2996MR
LP2996MRX
M08A
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BB145
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 Low-voltage variable capacitance diode Product specification Supersedes data of 1999 Sep 15 1999 Dec 15 Philips Semiconductors Product specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145 is a planar technology
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M3D319
BB145
BB145
OD523
SC-79)
MBK441
125004/02/pp8
BP317
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"marking code X"
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB187 VHF variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • High linearity • Low series resistance. The BB187 is a planar technology
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M3D319
BB187
OD523
SC-79)
125004/01/pp8
"marking code X"
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LP2996
Abstract: LP2996MX LP2996LQ LP2996LQX LP2996M LP2996MR LP2996MRX M08A
Text: General Description Features The LP2996 linear regulator is designed to meet the JEDEC SSTL-2 specifications for termination of DDR-SDRAM. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5A continuous current
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LP2996
LP2996
LP2996MX
LP2996LQ
LP2996LQX
LP2996M
LP2996MR
LP2996MRX
M08A
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"Z3M"
Abstract: Z3M g MIL-202F-201A PENI Z3M Y 3m 3903
Text: JNPS-0891‐A, PD-0055 製品仕様書 Product Specification ３Ｍ 印 Power Clamp ﾎﾞｰﾄﾞﾏｳﾝﾄ ﾍｯﾀﾞｰ ｽﾄﾚｰﾄﾀｲﾌﾟ 356XX-6XXX-X00 PE 3M Power Clamp Board Mount Header Straight Type 356XX-6XXX-X00 PE APRV. T.Shimizu
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JNPS0891A,
PD-0055
356XX-6XXX-X00
JNPS-0891,
PD0055
"Z3M"
Z3M g
MIL-202F-201A
PENI
Z3M Y
3m 3903
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jan 26 2001 Jul 13 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350D FEATURES QUICK REFERENCE DATA
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M3D302
PBSS5350D
OT89/SOT223
SC-74
OT457)
613514/03/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jan 26 2001 Jul 13 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA
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M3D302
PBSS4350D
OT89/SOT223
613514/03/pp12
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dc37 cutout
Abstract: No abstract text available
Text: ' ON 5-ñ B DATE JK iSc REV. 8 Z 0 E 0 LPS 2 QN I'M Vüg ^#JlB 13 . O c t . 2005 N PIN ANOTE4 0T I NS E R T t ° > -r > DON W. H ft & DESCRIPTION NO. ADD 058374 m 1 $APPD. M aCHK.% DR. N0TE4 u AP P D . A-. kJ ouS V Y.TAKAGI Zgg0& A E 4 VERSI ON D E S I G NA T I O N
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