mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900
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element-14
element14
mdd 2605
HCPL 1458 8 pin opto
KS0108 128X64 graphical LCD
mdd 2601
transistor chn 952
hitachi INVC 618
Data Vision P135
H4 led smd headlight bulb
transistor CHN 64 946
transistor chn 943
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D1029N
Abstract: D2209N D2659N D4401N D748N K50 DIODE
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 903 V 2200 V Kühlblöcke für Wasserkühlung - Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A] [W]
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D748N
D1029N
D2209N
D2659N
D4401N
D1029N
D2209N
D2659N
D4401N
D748N
K50 DIODE
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3127
Abstract: k50 transistor D1029N D2209N D2659N D4401N D748N
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 903 V 2200 V Kühlblöcke für Wasserkühlung - Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A] [W]
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D748N
D1029N
D2209N
D2659N
D4401N
3127
k50 transistor
D1029N
D2209N
D2659N
D4401N
D748N
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tlo82
Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil
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I-20089
tlo82
TLO82 datasheet
lm147
lm117 3.3V
JM38510/10901BGA
TLO82 application
lm723
LM338 model SPICE
LM723 pin details
lm842
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spl dl903
Abstract: spl dl90 NANOSTACK
Text: Nanostack Impuls-Laserdiode Nanostack Pulsed Laser Diode SPL DL90_3 Besondere Merkmale Features • Zuverlässiges InGaAs/GaAs kompressiv verspanntes Halbleiter-Material • Hochleistungslaser mit „Large-Optical-Cavity“ LOC Struktur für ein schmales Fernfeld
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OSRAM Infrared Emitters chip
Abstract: spl pl90 3 NANOSTACK spl dl903
Text: Nanostack Impuls-Laserdiode Nanostack Pulsed Laser Diode Lead Pb Free Product - RoHS Compliant SPL DL90_3 Besondere Merkmale Features • Zuverlässiges InGaAs/GaAs kompressiv verspanntes Halbleiter-Material • Hochleistungslaser mit „Large-Optical-Cavity“
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2N6659
Abstract: No abstract text available
Text: 2N6659 60V Vdss N-Channel FET field Effect Transistor 11.69 Transistors MOSFETs . Page 1 of 1 Enter Your Part # Home Part Number: 2N6659 Online Store 2N6659 Diodes 60V Vdss N -Channel FET (field Effect Transistor) Transistors Integrated Circuits Optoelectronics
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2N6659
2N6659
com/2n6659
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985-117
Abstract: PD 1515 2322 644 D1029N D2209N D660N D748N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D748N
D660N
D1029N
D2209N
1KK34
985-117
PD 1515
2322 644
D1029N
D2209N
D660N
D748N
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 915 nm, 80 W cw JDL-BAB-20-19-915-TE-80-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers
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JDL-BAB-20-19-915-TE-80-2
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps HIGH-SPEED LIMITING POST AMPLIFIER Micrel, Inc. DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Up to 1.25Gbps operation Low noise Chatter-Free LOS Generation Open Collector TTL LOS Output TTL /EN Input Differential PECL inputs for data Single power supply
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25Gbps
SY88903
SY88902
SY88904
10-pin
SY88903
25Gbps.
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DSB010
Abstract: FC903
Text: Ordering number:EN3869A FC903 Silicon Epitaxial Planar Type High-Speed Switching Composite Diode Features Package Dimensions • Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC903 is formed with 3 chips, each being
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EN3869A
FC903
FC903
DSB010,
FC903]
DSB010
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T1A 250v fuse
Abstract: sharp optocoupler PC817 capacitor 100nf 100v polyester size 0204 100nF film 400V Epcos n67 material vogt transformer capacitor 100nf 250v polyester optocoupler PC817 Zener diode 1N4148 DO-41
Text: Bill of Material – STEVAL-ISA015V2 Item Quantity Capacitors: 1 2 2 1 3 1 4 2 5 1 6 3 7 1 8 1 9 2 10 1 Diodes: 11 4 12 4 13 1 14 2 15 1 Mechanical parts: 16 1 17 1 18 2 19 1 Transistors: 20 1 21 1 Reference Part Description C1,C2 C3 C4 C5 C10 C6,C9,C13 C7
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STEVAL-ISA015V2
150uF
8nF/1250V
100nF
100nF/100V
470pF
1000uF/35V
B43505-A9157-M,
B32652A7682J
B32560J1104J
T1A 250v fuse
sharp optocoupler PC817
capacitor 100nf 100v polyester
size 0204
100nF film 400V
Epcos n67 material
vogt transformer
capacitor 100nf 250v polyester
optocoupler PC817
Zener diode 1N4148 DO-41
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2A 5v ZENER DIODE
Abstract: 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ
Text: 2SD2170 Transistors_ Medium Power Transistor Motor, Relay drive (903, 2A) 2SD2170 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to
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2SD2170
SC-62
30MHz
2A 5v ZENER DIODE
2sd2170
T100
marking DM zener diode
transistor collector diode protection
SC-62 EIAJ
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LF 833
Abstract: No abstract text available
Text: [*n REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRC1113 DESCRIPTION PACKAGE DIMENSIONS - .3 2 8 8.33 .420 (10.67)-* .226 (5.74) 1 150 (3.81 ) NOM POINT OF OPTIMUM RESPONSE .150 (3.81 MIN f .373 (9.47) m I -.903 (22.94)-.603(15.32) t .210 (5.33) -ST2178
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QRC1113
QRC1113
-----ST2178
LF 833
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TND903
Abstract: TND908 TND905 1N3070 1N3595 1N3800 1N4153 TND907 TND918 TND921
Text: I n t e r n a t/ o n a l T N D 903 thru S e m ic o n d u c t o r , I n c . TND942 DIODE ARRAYS The TND series of diode arrays are packaged in 14 and 16 pin dual-in-line p la stic packages fo r easy autom atic insertion and better printed circ u it board density.
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TND903
TND942
TND903
TND907
TND908
TND918
TND921*
1N3070,
1N3595,
1N3800,
TND905
1N3070
1N3595
1N3800
1N4153
TND921
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Untitled
Abstract: No abstract text available
Text: LOE D I fl535bOS 0CmS570 530 « S I E C SIEM EN S SIEMENS AKTIENÛESELLSCHAF ' T - 3 f ‘- c2 / BTS 903 TEMPFET Preliminary Data • • • • • VDS = - 2 0 0 V, lD = - 3 . 6 A, ^ D S o n — 1-5 fi P-channel, enhancem ent m ode Tem perature sen sor with th yristo r cha ra cte ristic
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fl535bOS
0CmS570
7078-A
800-A
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ND921
Abstract: br 903
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
TND903
TND905
TND907
ND921
br 903
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tt 3034
Abstract: schematic diagram online UPS DAN212R T146 T246 dap 001
Text: I 7fl2A1«H OOOfl^b'î 4 «H ROHITI H R H d _ SEMICONDUCTORS SWITCHING DIODE : SC-59 ABSOLUTE MAXIMUM RATINGS: TA=25°C DC reverse voltage v R . . 100V Peak reverse voltage
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SC-59
100mA
300mW
100ns
DAN212R
tt 3034
schematic diagram online UPS
T146
T246
dap 001
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sy 320 diode
Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren
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1-ST1781
Abstract: ST178
Text: [*Q REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRC1133 PACKAGE DIMENSIONS DESCRIPTION The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor reponds to radiation from the emitting
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QRC1133
1------ST1781
1-ST1781
ST178
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Untitled
Abstract: No abstract text available
Text: HL1326MF InGaAsP Laser Diode Description The HL1326M F is a 1.3 Am InGaAsP Fabry Perot laser diode with a multi-quantum well (MQW structure. It is suitable as a light source in short and medium range fiberoptic communication systems and other applied optical equipment. It has high optical power with low drive current and wide operating
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HL1326MF
HL1326MF
HL1326MF:
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transistor bI 240
Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
Text: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
ST2179nt
QRB1113
QRB1114
transistor bI 240
D transistor sEC
transistor 373
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LYE65F
Abstract: 5630 osram E656-AABB-26-1 Q65110A1852 LYE65F-BBCB-35-1-L E65B-AACA-24-1 Q65110A2352 2800 617 LA E63F-EAFA-24-1 E658-V1AE-1-1
Text: Light Emitting Diodes | Lumineszenzdioden Package Gehäuse Type Bezeichnung En-ission oolor En-issionsf3rbe *GOfr ty p [n m ]/ Color coordi nates x/y k. V | 2ç (ty p ) (£0% Orden ng Code Bes:e nummer [mlm] [mA] n 710 . 1800 1450 Q65110A2763 1120 . 2800
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E658-V1AE-1-1
E65S-AABB-1-1
LSE65B-V1BE-1-1
Q65110A2763
Q65110A2784
Q65110A2762
E656-AABB-24-1
E85S-EACA-24-1
E65B-AACA-24-1
Q65110A2349
LYE65F
5630 osram
E656-AABB-26-1
Q65110A1852
LYE65F-BBCB-35-1-L
Q65110A2352
2800 617
LA E63F-EAFA-24-1
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Untitled
Abstract: No abstract text available
Text: SANYO Taping S p e c i f i c a t i o n of Diodes CD Axial taping w Taping Suffix Pack ing 26 BT Box for zigzag bended type 52 ATI Box for zigzag bended type 5, OOOPcs/box 3 , OOOPcs/box) GMA01-BT DSF10TB-AT1 CP type taping o o o TB TA TA T w o - o u t e r - 1eads on the hole side
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GMA01-BT
DSF10TB-AT1
DCA010-TA
DCF010-Q
DSA14E-TR
500Pcs/reelj
750Pcs/ree1
DBB08)
DBB08E-TM
750Pcs/reel)
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