DSB010 Search Results

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

DO-151

Abstract: DFA12E DSA26C DSK10L DSK10 lfb01l SVC251Y GMA01 DSB015 ds442x
Contextual Info: DIODES, THYRISTORS, SENSO High-speed Switching Diodes Plastic-package Diodes Device l0 A Vr <V) Package type 0.10 80 MCP2 DCF010 0,10 so DCG010 0.10 80 D S E 01 0* Features Device Single DCA015 MCP Com m on anode DCB015 MCP Com m on cathode DSA015 10 (A)

DSB010

Abstract: FC903
Contextual Info: Ordering number:EN3869A FC903 Silicon Epitaxial Planar Type High-Speed Switching Composite Diode Features Package Dimensions • Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC903 is formed with 3 chips, each being

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

DSD- 2030

Abstract: Zener C344 DO-34 ZENER SVC321 DSB010 DSA010 zener c346
Contextual Info: DIODES, THYRISTORS, SENSORS High-speed Switching Diodes Plastic-package Diodes Device ! io * 010 DCF010 I VB (V) ¡Package type M u n i* Device I 80 MCP Common anode DSC 010 k)(A) Vr (V) 010 80 Package type] Features CP Single Single DCG010 010 80 MCP Common cathode

DSB010

Abstract: DSD010 DSC010 2sa1571 2SK1375 DSA010 CAPACITOR MICROPHONE 2SC4146 2SC4047 2SC4066
Contextual Info: Ordering number: EN 5324A No.5324A SAßiYO Notification of the Designation of Maintenance and Obsolete Discrete Devices Affected Products : Products listed below Thank you for your continued use of SANYO semiconductor products. This notice announces the designation of maintenance and obsolete SANYO semiconductor products. Please make

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

DCC010

Abstract: DO-35 C3 gmb01 MARKING cp6
Contextual Info: SA0YO Q u i c k G u i d e To Small ole Ver-y Rast Swi t c h l n g Type No. Remarks :Marking High withstand Voltage Electrical Characteristics/Ta-251C Package No. General purpose VR 10 (V) (mA) (mA) IF (mA) max (V) IR max VR (V) (ßV trr max (ns) IF (mA)

DSB010

Abstract: FC903
Contextual Info: Ordering number : ENN3869B FC903 FC903 Silicon Epitaxial Planar Type High-Speed Switching Composite Diode Features Package Dimensions Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC903 is formed with 3 chips, each being

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

Contextual Info: Ordering number : ENN3869B FC903 FC903 Silicon Epitaxial Planar Type High-Speed Switching Composite Diode Features Package Dimensions Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC903 is formed with 3 chips, each being

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

DSB010

Contextual Info: I Ordering num ber : ENN3869B _ FC903 Silicon Epitaxial Planar Type ISAfiYOl High-Speed Switching Composite Diode Features Package Dimensions • Composite type with 3 diodes contained in the CP package currently in use, improving the mounting

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

DSB010

Abstract: DS442X
Contextual Info: SAf/YO Q u i c k G u i d e To Small afc Ver-y Fast. Swi t o h i ng Type No. Package Out 1ine No. :Marking General purpose Diodes Di o d e s Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25’C Features Signal Remarks VR 10 IFM (V) (mA)