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    2SJ287 Search Results

    2SJ287 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ287 Kexin P-Channel MOSFET Original PDF
    2SJ287 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ287 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF
    2SJ287 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF

    2SJ287 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking JD

    Abstract: MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking
    Text: MOSFET SMD Type P-Channel MOS Silicon FET 2SJ287 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Low on resistance +0.1 2.50-0.1 Very high-speed switching Low-voltage drive 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1


    Original     		PDF 2SJ287 OT-89 -250mA --250mA smd marking JD MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking

    EN4307

    Abstract: 2SJ287
    Text: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		PDF EN4307 2SJ287 2SJ287] 25max EN4307 2SJ287

    2062a

    Abstract: 2SJ287 ITR00374 ITR00375 ITR00376 ITR00377 ITR00388 ITR00389
    Text: 注文コード No.N 4 3 0 7 A 2SJ287 No. 4 3 0 7 A 61599 半導体ニューズ No.4307 とさしかえてください。 2SJ287 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		PDF 2SJ287 250mm2 250mA 250mA, --250mA ITR00390 ITR00391 2062a 2SJ287 ITR00374 ITR00375 ITR00376 ITR00377 ITR00388 ITR00389

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		PDF EN4307 2SJ287 2SJ287] 25max

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original     		PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original     		PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    sb30-03p

    Abstract: 3SK181 DSE015 3SK189
    Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251


    OCR Scan     		PDF 2SJ187 2SJ190 2SJ193 2SJ284 2SJ285 2SJ286 2SJ287 2SJ288 2SJ289 2SJ316 sb30-03p 3SK181 DSE015 3SK189

    2SJ469

    Abstract: No abstract text available
    Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5


    OCR Scan     		PDF 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469

    AX8896

    Abstract: No abstract text available
    Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage


    OCR Scan     		PDF 2SJ287 250mm2X 250mA ----10V 32593TH AX-8896 AX8896

    2SJ287

    Abstract: J600C
    Text: Ordering number: EN 4307 No.4307 _ 2SJ287 P-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF 2SJ287 250mm2 J600C

    c3807

    Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
    Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4


    OCR Scan     		PDF K2270 A1765 A1497/C3860, A1503/C3864 A1509/C3899, A1511/C3901 A1572/ A1574/C4070 A1582/C4113, A1590/C4121 c3807 C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986

    2sc3153

    Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator


    OCR Scan     		PDF 2SC3151 T03PB 10to40 2SC3152 2SC3I53 2SC3277 2sc3153 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3448 2SC3449

    Untitled

    Abstract: No abstract text available
    Text: • Devices Related to Batteries and DC/DC Converters Low-saturation Transistors Absolute maximum ratings Ta = 25°C Type No. Package 2SB1295 CP VCbo V CEO (V) (V) 15 v CE(sat) Pc (W) (A) 15 Electrical characteristics (Ta = 25°C) 0.8 0.2 VCE (V) •c (A)


    OCR Scan     		PDF 2SB1295 2SB1122 2SD1622 250mm2 SB007-03Q SB007W SB007T03Q FC806 SB007-03Q SB007W03Q

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


    OCR Scan     		PDF MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking

    2SK2153

    Abstract: 2SJ332S
    Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^


    OCR Scan     		PDF 2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S