Untitled
Abstract: No abstract text available
Text: Am 90CL255 Low-Power 256K x 1 CMOS Nibble Mode DRAM DISTINCTIVE CHARACTERISTICS • • Extended refresh period — 32 ms Max. during standby Low data retention current — 230 mA (Max.) • 90CL255 OVERVIEW The 256K x 1 CMOS Low-Power (' L') DRAM versions share com m on functional descriptions, DC and AC characteristics with
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Am90CL255
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Untitled
Abstract: No abstract text available
Text: Am 90CL257 OVERVIEW The 256K x 1 CMOS Low-Power ' L' DRAM versions share com m on functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-'L') versions. The only additions to these sections are: DISTINCTIVE CHARACTERISTICS
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Am90CL257
Am90CL255
25Max.
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Untitled
Abstract: No abstract text available
Text: Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM OVERVIEW The 256K x 1 CMOS Low-Power 'L ' DRAM versions share com m on functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-’ L1) versions. The only additions to these sections are:
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Am90CL257
90CL255
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Untitled
Abstract: No abstract text available
Text: Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM DISTINCTIVE CHARACTERISTICS • • Extended refresh period — 32 ms Max. during standby Low data retention current — 230 juA (Max.) • Low-power dissipation — 0.55 mW (Max.) ORDERING INFORMATION
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Am90CL257
90CL255
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Untitled
Abstract: No abstract text available
Text: Am90CL256 Am 90CL256 Low-Power 256K x 1 CMOS Enhanced Page Mode DRAM O V E R V IE W T he 256K x 1 C M O S Low-Power 'L' D R A M versions share common functional descriptions, D C and A C characteristics with the corresponding standard C M O S (non-'L) versions. The only additions to these sections are:
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Am90CL256
90CL256
100-pF
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