UL90V-0

Abstract: T56M
Contextual Info: BYT56A-BYT56M High Efficiency Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A DO - 27 Features Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost High surge current capability Bevel round chip, aualanche operation

BYT 56M diode

Abstract: byt 56m BYT56M BYT-56M BYT56A BYT56G 90V0
Contextual Info: BL GALAXY ELECTRICAL BYT56A Z - BYT56M(Z) VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A HIGH EFFICIENCY ECTIFIERS FEATURES DO - 27 Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost High surge current capability Bevel round chip, aualanche operation

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am27h10

Contextual Info: ADV MIC RO M E MO RY MfiE D • Ü25752Ô □ D 3 0 l)13 5 ■ A M D 1» T-46-13-29 A m 2 7 H 0 1 0 Advanced 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Industry's fastest -45ns 1 megabit CMOS EPROM ■ Versions available in industrial and military

Contextual Info: 10 - 4-7.00 -— - 7 1 .0 0 - I— — 1 O O T Y P w- F F N T F R I IN F OF 1 7 8 FO MIN F F A T IJ R F 153.00 MAX • 107.00 MAX ■ -128.60 MIN 6.10

Contextual Info: 10 PART NUMBER GET W/CAP IN TUBE SIZE DIM. A DIM. B -AMAX.- ’.00 TY P n _ n 0 - - S m H - 1.10 2 2.00 2.00 8 7 3 2 0 - 0 6 *5 6 6.00 2.00 8 7 3 2 0 - 0 8 *5 8 8.00 6.00 873Y0-10*5 10 10.00 8.00 87320-12*5 12 12.00 10.00 8754-0-14-965 14 15.00 12.00 87320-16*5

AD6604

Abstract: 0100152
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Contextual Info: Advanced Micro Devices Am27H010 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — 45 ns — Typical program m ing tim e of 16 seconds ■ JEDEC-approved pinout — Plug in upgrade of standard 1 Mbit EPROMs

Contextual Info: a Prelim inary A m 27H 010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • Industry's fastest ■ Versions available in industrial and military temperature ranges -45ns 1 megabit CMOS EPROM ■ ± 10% power supply tolerance available

ZD - 98F

Abstract: ZD 98F
Contextual Info: 12 13 DISCRETE CONN. SIZE NO OF CONN. IN CHAIN 11 DIM. C .998 2.59 2.756 70.00 .390 90327 .197 5.00) 2.953 75.00 .489 .295 7.59) 2.756 70.00 .587 14.92) .390 10 . 0 0 ) 2.756 70.00 .092 12.50) 2.556 65.00 .591 15.90) 2.952 75.00 .689 17.59) 2.061 62.56 20.09

AM27H010

Abstract: AM27H01055DC CERAMIC LEADLESS CHIP CARRIER LCC 32 socket
Contextual Info: FINAL i A m 2 7 H l Advanced Micro Devices 0 1 0 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 45 ns ■ JEDEC-approved pinout — Typical programming time of 16 seconds

AM27C010

Abstract: Am27H10
Contextual Info: Am27H010 Advanced Micro Devices ] Megabit 131,072 * 8-Bit High Speed CMOS EPROM D IS T IN C T IV E CHARACTERISTICS * industry's fastest I Versions available In industrial and military temperature ranges 45ns 1 megabit CM O S EPRO M I ± 10% power supply tolerance available

323CL

Abstract: 331CL
Contextual Info: a Advanced Micro Devices Am27H010 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 45 ns ■ JEDEC-approved pinout — Typical programming time of 16 seconds ■ Latch-up protected to 100 mA from -1 V to

AMD am2 socket pinout

Abstract: amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD AM27H010 50raW
Contextual Info: ADV MICRO b4E D MEMORY • 02S752Ö 0032QÖ7 böü Bi A M D 1) ti Advanced Micro Devices Am27H010 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 45 ns — Typical programming time of 16 seconds

BALLAST MOTOROLA

Abstract: circuit diagram electronic ballast for 32W tube l ELECTRONIC BALLAST DIAGRAM 1000W fluorescent ballast schematic ELECTRONIC BALLAST dual DIAGRAM ballast circuit diagram 75w bq 80300 transistor Electronic ballast transistor ballast 1000W ELECTRONIC BALLAST transistor DIAGRAM
Contextual Info: ARE402/D THE FI FCTRONIC .%? CONTROL &$;’” Reprinted December MOTOROLA @ Semiconductor Products by permission of ELECTRONIQUE 1988 Issue, 01988 SPS, All Rights DE PUISSANCE, Reserved. THE ELECTRONIC CONTROL OF FLUORESCENT TUBES ,., ‘, . Prepared by:

GP2L23L

Abstract: GP2L23R 90V0
Contextual Info: GP2L23L/GP2L23R GP2L23L/GP2L23R Compact, Win ~pe Photointerrupter • Features ■ OulSne Dimensions 1. Correspond to prism system 2. Compact and thin Thickness : 3mm (Unit : mm) Internal connection diagram GP2L23L GP2L23R Z A~tions 1. Specified for tape-end detection for digital