Untitled
Abstract: No abstract text available
Text: MPS-090917N-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-090917N-85 is a low noise , high dynamic range amplifier designed
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MPS-090917N-85
MPS-090917N-85
090917N
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MPS-090917P-85
Abstract: 920 diode zener mps 940
Text: MPS-090917P-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-85 is a low noise , high dynamic range amplifier designed
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MPS-090917P-85
MPS-090917P-85
090917P
920 diode zener
mps 940
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MPS-090917N-85
Abstract: 920 diode zener 930 diode zener
Text: MPS-090917N-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-090917N-85 is a low noise , high dynamic range amplifier designed
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MPS-090917N-85
MPS-090917N-85
090917N
920 diode zener
930 diode zener
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Untitled
Abstract: No abstract text available
Text: MPS-090917P-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-85 is a low noise , high dynamic range amplifier designed
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MPS-090917P-85
MPS-090917P-85
090917P
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Untitled
Abstract: No abstract text available
Text: MPS-090917P-82 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-82 is a low noise , high dynamic range amplifier designed
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MPS-090917P-82
MPS-090917P-82
Fre50
090917P
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MPS-090917P-82
Abstract: No abstract text available
Text: MPS-090917P-82 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-82 is a low noise , high dynamic range amplifier designed
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MPS-090917P-82
MPS-090917P-82
090917P
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EIAJ-ED-4701
Abstract: EIAJED-4701 1SS106 EIAJ-ED-4131 RKP450KE EIAJ standards zener diode reliability fit 1s2076 smd diode ED 1SS270
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ27G0006-0400/Rev
EIAJ-ED-4701
EIAJED-4701
1SS106
EIAJ-ED-4131
RKP450KE
EIAJ standards
zener diode reliability fit
1s2076
smd diode ED
1SS270
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MPS09
Abstract: No abstract text available
Text: MPS-090917P-02 920 to 965 MHz Linear Amplifier Preliminary Data Sheet Features: MP S -0 909 1.1 dB NF +44 dBm IP3 14.5 dB Gain 17P -02 +28 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-090917P-02 is a low cost high linearity modular amplifier designed to meet the
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MPS-090917P-02
MPS-090917P-02
CDMA2000,
MPS09
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W18NK80Z
Abstract: mosfet w18nk80z w18nk80 STW18NK80Z 920 diode zener w18nk
Text: STW18NK80Z N-CHANNEL 800V - 0.34Ω - 19A TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STW18NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.38 Ω 19 A 350 W TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STW18NK80Z
O-247
W18NK80Z
mosfet w18nk80z
w18nk80
STW18NK80Z
920 diode zener
w18nk
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MPS-090917N-02
Abstract: Microwave Technology 50 ohm microstrip line
Text: MPS-090917N-02 920 to 965 MHz Linear Amplifier Preliminary Data Sheet Features: MP S- 0 909 0.8 dB NF 13.5 dB Gain +23 dBm P1dB 17N -0 2 Single Positive Bias Leadless Surface Mount Package The MPS-090917N-02 is a low cost high linearity modular amplifier designed to meet the
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MPS-090917N-02
MPS-090917N-02
CDMA2000,
Microwave Technology
50 ohm microstrip line
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102J
Abstract: DB-55008L-960 EEVHB1V100P EXCELDRC35C GRM42-6 PD55008L PD55008L-E
Text: DB-55008L-960 Evaluation board using PD55008L-E for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 12 V ■ Output power: 7 W ■ Efficiency: 46 % - 55 % ■ Load mismatch: 20:1 ■ Beo free amplifier
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DB-55008L-960
PD55008L-E
DB-55008L-960
PD55008L-E,
102J
EEVHB1V100P
EXCELDRC35C
GRM42-6
PD55008L
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smd zener diode code DE
Abstract: ATC100B 4.7pf capacitor 100nf 63v amplifier MA-920 920 smd transistor 6 pin TRANSISTOR SMD CODE PA 75W SMD w50 smd transistor ceramic capacitor 100nF 50 p2 10K
Text: DB-960-70W 70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY
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DB-960-70W
PD57045S
DB-960-70W
smd zener diode code DE
ATC100B 4.7pf
capacitor 100nf 63v
amplifier MA-920
920 smd transistor
6 pin TRANSISTOR SMD CODE PA
75W SMD
w50 smd transistor
ceramic capacitor 100nF 50
p2 10K
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ZENER DIODE 5.1V
Abstract: CAPACITOR 33PF DB-55035S-930 SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S
Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1
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DB-55035S-930
PD55035S
DB-55035S-930
ZENER DIODE 5.1V
CAPACITOR 33PF
SMD Transistor 30w
NV SMD TRANSISTOR
3214W-1-103E
BZX284C5V1
EEVHB1V100P
JESD97
PD55035S
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Untitled
Abstract: No abstract text available
Text: MPS-0909A9-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0909A9-85 is a low noise , high dynamic range amplifier designed
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MPS-0909A9-85
MPS-0909A9-85
0909A9
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PD85006
Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package
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PD85006-E
Hz/13
2002/95/EC
PowerSO-10RF
PD85006-E
PD85006
16208
AN1294
706 SMD ST
diode gp 434
EXCELDRC35C
PD84002
PD85
740J
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PD55035S
Abstract: No abstract text available
Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1
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DB-55035S-930
PD55035S
DB-55035S-930
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MPS-0909A9-85
Abstract: 920 diode zener
Text: MPS-0909A9-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0909A9-85 is a low noise , high dynamic range amplifier designed
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MPS-0909A9-85
MPS-0909A9-85
0909A9
920 diode zener
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Untitled
Abstract: No abstract text available
Text: MPS-0810A9-02 800 to 960 MHz Linear Amplifiers Preliminary Data Sheet Features: MP S-0 810 1.1 dB NF 15.0 dB Gain +20.5 dBm P1dB A902 34 dBm IP3 Single Positive Bias Leadless Surface Mount Package The MPS-0810A9-02 is a low-noise, high dynamic range amplifier designed for ultra linear
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MPS-0810A9-02
MPS-0810A9-02
NMT-900
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NMT-900
Abstract: repeater GSM LNA A902
Text: MPS-0810A9-02 800 to 960 MHz Linear Amplifiers Preliminary Data Sheet Features: MP S-0 810 1.1 dB NF 15.0 dB Gain +20.5 dBm P1dB A902 34 dBm IP3 Single Positive Bias Leadless Surface Mount Package The MPS-0810A9-02 is a low-noise, high dynamic range amplifier designed for ultra linear
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MPS-0810A9-02
MPS-0810A9-02
NMT-900
repeater GSM LNA
A902
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ATC100B
Abstract: PD57045S DB-960-70W SUBSTRATE TEFLON-GLASS Er 2.55 SMD Transistor 30w ED135
Text: DB-960-70W 70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY
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DB-960-70W
PD57045S
DB-960-70W
ATC100B
PD57045S
SUBSTRATE TEFLON-GLASS Er 2.55
SMD Transistor 30w
ED135
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Untitled
Abstract: No abstract text available
Text: MPS-090917N-02 920 to 965 MHz Linear Amplifier Preliminary Data Sheet Features: MP S- 0 909 0.8 dB NF 13.5 dB Gain +23 dBm P1dB 17N -0 2 Single Positive Bias Leadless Surface Mount Package The MPS-090917N-02 is a low cost high linearity modular amplifier designed to meet the
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MPS-090917N-02
MPS-090917N-02
CDMA2000,
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Untitled
Abstract: No abstract text available
Text: MPS-090917P-02 920 to 965 MHz Linear Amplifier Preliminary Data Sheet Features: MP S -0 909 1.1 dB NF +44 dBm IP3 14.5 dB Gain 17P -02 +28 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-090917P-02 is a low cost high linearity modular amplifier designed to meet the
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MPS-090917P-02
MPS-090917P-02
CDMA2000,
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JIS-C-7021
Abstract: JIS-C-5035 JISC7021 smd diode 307 zener diode reliability fit 1SS106 smd marking mop marking R35 SMD zener diode table 7021
Text: Reliability of Hitachi Diodes 1. Diode Reliability 1.2 Reliability Data 1.1 About the Construction Actual examples o f diode reliability tests are given below. Diodes are classified according to whether they are se a le d in g la s s o r p la s tic , an d d if f e r e n t
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1GO/100
JIS-C-7021
JIS-C-5035
JISC7021
smd diode 307
zener diode reliability fit
1SS106
smd marking mop
marking R35 SMD
zener diode table
7021
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IN5639A
Abstract: diode LT 675 IN 407 IN6053 Zener diode IN5637A in5645a IN6036A IN5650A IN6055A IN6042A in6053a
Text: POWERZORB L13 Series 1.5KW Transient Absorption Zener Diode A range of unipolar Protection diodes in a hermetically sealed metal and glass D013 package. ; 1mS expo P max c o n t-
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