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    95253 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    95253-101ALF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Vertical header, Surface mount, Double Row, 14 Positions, 2.54mm (0.100in) Pitch , 1 pin ommitted. Visit Amphenol Communications Solutions
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    Essentra Components TNM4-9.5-25-3

    ROUND STANDOFF M4 NYLON 25MM
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    DigiKey TNM4-9.5-25-3 Bulk 75 1
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    Elesa SPA CE.95253

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    Elesa SPA CE.95253-4N

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    Elesa SPA CE.95253-C1

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    Elesa SPA CE.95253-C1-4N

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    DigiKey CE.95253-C1-4N Bag 10 1
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    95253 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    95253-101ALF FCI Rectangular Connectors - Headers, Male Pins, Connectors, Interconnects, HEADER BERGSTIK SMT Original PDF

    95253 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD- 95253 IRF7240PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description S These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon


    Original     		PDF IRF7240PbF EIA-481 EIA-541.

    alpha particle

    Abstract: 140C CY7C199 EME-6300H 95253
    Text: Qualification Report QTP# 95134/95201/95253, Version 1.0 NON-DIE COAT SRAM PROCESS SOJ Package PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part


    Original     		PDF CY7C199 28-pin, 300-mil CY7C199) 7C199C CY7C199-VC alpha particle 140C CY7C199 EME-6300H 95253

    F7101

    Abstract: IRF7101 30V 10.5A p-channel MOSFET irf7240pbf
    Text: PD- 95253 IRF7240PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description S These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon


    Original     		PDF IRF7240PbF EIA-481 EIA-541. F7101 IRF7101 30V 10.5A p-channel MOSFET irf7240pbf

    VS-40EPS12-M3

    Abstract: VS-40EPS08-M3 VS-40EPS12
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47


    Original     		PDF VS-40EPS. JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-40EPS12-M3 VS-40EPS08-M3 VS-40EPS12

    60EPS08PBF

    Abstract: VS-60EPS12PBF
    Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47


    Original     		PDF VS-60EPS. JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 60EPS08PBF VS-60EPS12PBF

    JEDEC-JESD47

    Abstract: vs-30pt100
    Text: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency


    Original     		PDF VS-30PT100 O-247AC 2002/95/EC JEDEC-JESD47 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 JEDEC-JESD47 vs-30pt100

    95253

    Abstract: No abstract text available
    Text: Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A 3 (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C


    Original     		PDF O-247 21-Jun-11 95253

    40ETS12

    Abstract: No abstract text available
    Text: VS-20ETS16PbF, VS-20ETS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 2 3 1 TO-220AC


    Original     		PDF VS-20ETS16PbF, VS-20ETS16-M3 JEDEC-JESD47 O-220AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 40ETS12

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


    Original     		PDF VS-40EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: New Product VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified TO-247AC


    Original     		PDF VS-60EPU06HN3, VS-60APU06HN3 O-247AC O-247AC AEC-Q101 VS-60EPU06HN3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time TO-247AC modified


    Original     		PDF VS-60 O-247AC JEDEC-JESD47 O-247AC VS-60EPF. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-30EPH03PbF, VS-30EPH03-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current


    Original     		PDF VS-30EPH03PbF, VS-30EPH03-N3 JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product VS-60EPU06HN3, VS-60APU06HN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified TO-247AC


    Original     		PDF VS-60EPU06HN3, VS-60APU06HN3 O-247AC O-247AC AEC-Q101 VS-60EPU06HN3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to BENEFITS •


    Original     		PDF VS-HFA30PB120PbF, VS-HFA30PB120-N3 JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A TO-247AC modified FEATURES TO-247AC • Very low forward voltage drop • 150 °C max. operating junction temperature


    Original     		PDF VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 O-247AC O-247AC -JESD47 VS-40EPS16PbF VS-40EPS16-M3 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


    Original     		PDF VS-40EPS16PbF, VS-40EPS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-30EPH06HN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Single diode device


    Original     		PDF VS-30EPH06HN3 O-247AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47


    Original     		PDF VS-HFA15PB60PbF, VS-HFA15PB60-N3 2002/95/EC JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47


    Original     		PDF VS-40EPS. JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    60APU06PBF

    Abstract: 60APU06 60EPU06 IRFP250
    Text: 60EPU06PbF, 60APU06PbF Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED Pt 60EPU06PbF FEATURES 60APU06PbF • Ultrafast recovery • 175 °C operating junction temperature • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level


    Original     		PDF 60EPU06PbF, 60APU06PbF 60EPU06PbF 2002/95/EC O-247AC O-247AC 18-Jul-08 60APU06PBF 60APU06 60EPU06 IRFP250

    60APU06

    Abstract: 60EPU06 IRFP250 Vishay TO-247AC Package
    Text: 60EPU06, 60APU06 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED Pt 60EPU06 FEATURES 60APU06 • Ultrafast recovery • 175 °C operating junction temperature • Designed and qualified for industrial level BENEFITS Cathode to base Cathode


    Original     		PDF 60EPU06, 60APU06 60EPU06 O-247AC 18-Jul-08 60APU06 60EPU06 IRFP250 Vishay TO-247AC Package

    Untitled

    Abstract: No abstract text available
    Text: New Product VS-30EPH06HN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Single diode device


    Original     		PDF VS-30EPH06HN3 O-247AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    60epf10-m3

    Abstract: 60APF12PBF
    Text: VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time TO-247AC modified


    Original     		PDF VS-60 O-247AC O-247AC JEDEC-JESD47 2002/95/EC VS-60EPF1. VS-60APF1. 2011/65/EU 2002/95/EC. 60epf10-m3 60APF12PBF

    30APF12

    Abstract: VS-30APF10PBF
    Text: VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 30 A FEATURES • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time TO-247AC modified


    Original     		PDF VS-30 O-247AC O-247AC JEDEC-JESD47 2002/95/EC VS-30EPF1. VS-30APF1. 2011/65/EU 2002/95/EC. 30APF12 VS-30APF10PBF