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    RM73B2B

    Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9060 MRF6S9060NR1/NBR1. MRF6S9060MR1 MRF6S9060MBR1 MRF6S9060MR1

    RM73B2B

    Abstract: MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3
    Text: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HSR3

    100B2R7CP500X

    Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3 100B2R7CP500X AN1955 MRF5S21100HSR3 MRF5S21100L

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 AN1955 CDR33BX104AKWS MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21090LR3 and MRF5S21090LSR3 replaced by MRF5S21090HR3 and MRF5S21090HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21090LR3 MRF5S21090LSR3


    Original     		PDF MRF5S21090L/D MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090HR3 MRF5S21090HSR3. MRF5S21090LR3 MRF5S21090LSR3 84tion

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    100B2R0BP

    Abstract: MRF5S21090 dbc 4223 MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3
    Text: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090L/D MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 100B2R0BP MRF5S21090 dbc 4223 MRF5S21090LSR3

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090HR3 AN1955 CDR33BX104AKWS MRF5S21090H MRF5S21090HSR3 mrf5s21090

    MOTOROLA 381 equivalent

    Abstract: 381 motorola AN1955 MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090LR3 MRF5S21090LSR3 mrf5s21090 Z-15
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21090LR3 and MRF5S21090LSR3 replaced by MRF5S21090HR3 and MRF5S21090HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21090LR3


    Original     		PDF MRF5S21090L/D MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090HR3 MRF5S21090HSR3. MRF5S21090LR3 MRF5S21090LSR3 MHz3-20-1, MOTOROLA 381 equivalent 381 motorola AN1955 MRF5S21090HSR3 mrf5s21090 Z-15

    MRF5S19130R3

    Abstract: MRF5S19130SR3 465B
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S19130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19130SR3


    Original     		PDF MRF5S19130/D MRF5S19130R3 MRF5S19130SR3 MRF5S19130R3 MRF5S19130SR3 465B

    Untitled

    Abstract: No abstract text available
    Text: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H 10ficers, MRF5S19130HR3 MRF5S19130HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3

    motorola 5118

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF 84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118

    ph c18 zener diode

    Abstract: 500w audio amplifier circuit diagram ph c24 zener diode C18 ph zener zener diode c27 ph IRS20124 mosfet based power inverter project 500w power amplifier stereo IRS20124 AN 46F4081
    Text: IRAUDAMP1 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 ! USA High Power Class D Audio Power Amplifier using IR2011S www.irf.com 1 IRAUDAMP1 High Power Class D Audio Power Amplifier using IR2011S Features - Complete Analog Input Class D Audio Power Amplifier


    Original     		PDF IR2011S IR2011S, ph c18 zener diode 500w audio amplifier circuit diagram ph c24 zener diode C18 ph zener zener diode c27 ph IRS20124 mosfet based power inverter project 500w power amplifier stereo IRS20124 AN 46F4081

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100LR3 AN1955 CDR33BX104AKWS MRF5S21100L MRF5S21100LSR3

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1 Lateral
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6S9060N MRF6S9060NR1 MRF6S9060NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9060N MRF6S9060NBR1 Lateral

    motorola rf power transistors mtbf

    Abstract: mrf5s21090 RM73B2B
    Text: MOTOROLA Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21090L/D MRF5S21090LR3 MRF5S21090LR3 MRF5S21090LSR3 motorola rf power transistors mtbf mrf5s21090 RM73B2B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D SEMICONDUCTOR TECHNICAL DATA MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package. MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3


    Original     		PDF MRF5S19130/D MRF5S19130R3 MRF5S19130SR3 MRF5S19130HR3 MRF5S19130HSR3. MRF5S19130R3 MRF5S19130SR3

    100B2R7CP500X

    Abstract: MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HR3 MRF5S21100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 100B2R7CP500X MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HSR3

    ansi-y14.5m-1994

    Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100L MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 ansi-y14.5m-1994 100B2R7CP500X CDR33BX104AKWS MRF5S21100LSR3 motorola 5118