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    CEM8433

    Abstract: No abstract text available
    Text: mu CEM8433 M arch 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES • - 2 0 V , - 5 .2 A , RDS ON =55mQ @ V gs =-4.5V. R ds(on)=95iti£2 @ V gs =-2.5V. • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		CEM8433 55itiQ CEM8433 PDF

    CEM2005

    Abstract: No abstract text available
    Text: CEM2005 PRELIMINARY Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES • 2 0 V , 5A Rds(on)=32iti Q @ V gs =4.5V. Di Rds(on)=43i71 Q @ V gs =2.5V. - 2 0 V , - 4 A , Rds(on)=95iti Q Di D2 D2 @ V gs =-4.5V. Rds(on)=1 25m Q @ V gs =-2.5V.


    OCR Scan     		CEM2005 32iti 43i71 95iti 125iti CEM2005 PDF