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    Industrial Fiber Optics Inc IF-D95OCI

    FIBER OPTIC RECEIVER 125KBPS
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    DigiKey IF-D95OCI Tube 1,862 1
    • 1 $8.71
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    • 1000 $4.6177
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    Industrial Fiber Optics Inc IF-D95OC

    FIBER OPTIC RECEIVER 125KBPS
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    DigiKey IF-D95OC Tube 1,092 1
    • 1 $8.71
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    Brady Worldwide Inc M7C-1000-595-OC

    LABEL 1" X 50' VINYL OC
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    DigiKey M7C-1000-595-OC Box 5 1
    • 1 $107.17
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    Newark M7C-1000-595-OC Bulk 9 1
    • 1 $90.99
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    TestEquity LLC M7C-1000-595-OC
    • 1 $90.99
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    Brady Worldwide Inc M7C-500-595-OC

    LABEL 0.5" X 50' VINYL OC
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    DigiKey M7C-500-595-OC Box 1
    • 1 $78.48
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    Newark M7C-500-595-OC Bulk 14 1
    • 1 $66.99
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    TestEquity LLC M7C-500-595-OC
    • 1 $66.99
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    • 100 $66.99
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    Brady Worldwide Inc M7C-2000-595-OC

    LABEL 2" X 50' VINYL OC
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    DigiKey M7C-2000-595-OC Box 1
    • 1 $153.24
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    • 100 $153.24
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    Newark M7C-2000-595-OC Bulk 1
    • 1 $138.99
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    • 100 $138.99
    • 1000 $138.99
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    TestEquity LLC M7C-2000-595-OC
    • 1 $138.99
    • 10 $138.99
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    • 1000 $138.99
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    95OC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IPEX

    Abstract: 1575.42Mhz gps antenna no patch coax 50ohm I-PEX patch antenna GPS and GSM Antenna
    Text: GSM GPS Combo PATCH Antenna GPS & GSM QuadQuad-Band Antenna for WorldWorld-Wide Use GPS • 1575.42MHz • Gain: 28dB typical • iPex/UFL Connector • Operates from 2.8—5.5V • RHCP: Right Hand Circular • Operating temp –35 to +95oC GSM • Quad Band Antenna


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    42MHz 20dBmin /50MHz /1710-1990MHz 50ohm 120mm IPEX 1575.42Mhz gps antenna no patch coax 50ohm I-PEX patch antenna GPS and GSM Antenna PDF

    MBR540

    Abstract: No abstract text available
    Text: MBR540 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR540 Symbol VRRM V 40 VRMS V 28 Dim. VDC V 40 Characteristics @TC=95oC Inches Min. Max.


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    MBR540 O-220AC 300ua 300us MBR540 PDF

    SBL850

    Abstract: SBL860
    Text: SBL850 thru SBL860 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL850 SBL860 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580


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    SBL850 SBL860 O-220AC SBL850 300ua 300us SBL860 PDF

    SEMPO ELECTRONIC

    Abstract: mbr560
    Text: MBR560 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR560 Symbol VRRM V 60 VRMS V 42 Dim. VDC V 60 Characteristics @TC=95oC Inches Min. Max.


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    MBR560 O-220AC 300ua 300us SEMPO ELECTRONIC mbr560 PDF

    MBR540

    Abstract: No abstract text available
    Text: MBR540 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR540 Symbol VRRM V 40 VRMS V 28 Dim. VDC V 40 Characteristics @TC=95oC Inches Min. Max.


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    MBR540 O-220AC 300ua 300us MBR540 PDF

    SBL850

    Abstract: SBL860
    Text: SBL850 thru SBL860 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL850 SBL860 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580


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    SBL850 SBL860 O-220AC SBL850 300ua 300us SBL860 PDF

    SBL550

    Abstract: SBL560
    Text: SBL550 thru SBL560 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL550 SBL560 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580


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    SBL550 SBL560 O-220AC SBL550 300ua 300us SBL560 PDF

    mbr560

    Abstract: DSA0025285
    Text: MBR560 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR560 Symbol VRRM V 60 VRMS V 42 Dim. VDC V 60 Characteristics @TC=95oC Inches Min. Max.


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    MBR560 O-220AC 300ua 300us mbr560 DSA0025285 PDF

    SBL550

    Abstract: SBL560
    Text: SBL550 thru SBL560 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL550 SBL560 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580


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    SBL550 SBL560 O-220AC SBL550 300ua 300us SBL560 PDF

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


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    NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af PDF

    100HZ

    Abstract: NMA-2001 NMA-2002 NMA-2003 NMA-2004 NMA-2005 NMA-2006 NMA-2007 NMA-2008 NMA-2009
    Text: NMA 2000 NOISE MODULES 100HZ TO 2GHZ DESCRIPTION NMA 2000 OUTPUT CHARACTERISTICS MODEL* FREQUENCY NOISE OUTPUT LEVEL CURRENT FLATNESS mV/ ?V/=Hz dBm/ dBm/HzENR dB mA BAND BAND Typ. Typ. NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz ±0.5dB ±0.5dB 10 10 31.6 -27±3.0%


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    100HZ NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz NMA-2003 100Hz-1MHz NMA-2004 100Hz-3MHz NMA-2005 NMA-2003 NMA-2006 NMA-2007 NMA-2008 NMA-2009 PDF

    NDT452P

    Abstract: No abstract text available
    Text: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


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    NDT452P NDT452P PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of


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    VL41D1G63B-K0/K9/F8S 1Gx72 204-PIN VL41D1G63B 512Mx8 204-pin 204-pin, PDF

    AM79C900

    Abstract: GIGAPHY-SD 1000BASE-LX 1000BASE-SX 1000BASE-X PDH064
    Text: PRELIMINARY Am79761 Physical Layer 10-Bit Transceiver for Gigabit Ethernet GigaPHY -SD DISTINCTIVE CHARACTERISTICS n Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) n Suitable for both Coaxial and Optical Link applications n 10-bit TTL Interface for Transmit and Receive


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    Am79761 10-Bit 64-pin 110oC-1W* 10oC/W 95oC/W 29oC/W) AM79C900 GIGAPHY-SD 1000BASE-LX 1000BASE-SX 1000BASE-X PDH064 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


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    VL43B1G63A-K0/K9/F8/E7S 1Gx72 204-PIN VL43B1G63A 512Mx8 28-bit 204-pin DDR3-800) PDF

    uA 741

    Abstract: VSC7135 w508 AN-20 VSC7135QU
    Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 1.25Gbits/sec Gigabit Ethernet Transceiver VSC7135 Features • Gigabit Ethernet Transceiver @ 1.25Gb/s • Low Power Operation - 700 mW • Compliant to IEEE 802.3Z PMA • Suitable for Both Coaxial or Optical Link


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    25Gbits/sec VSC7135 25Gb/s 125MHz VSC7135 25Gb/s 1000Base-X 10-bit 8B/10B G52146-0, uA 741 w508 AN-20 VSC7135QU PDF

    NDT014

    Abstract: No abstract text available
    Text: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


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    NDT014 NDT014 PDF

    c3 SOT-223

    Abstract: CBVK741B019 F63TNR F852 NDT452P PN2222A
    Text: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


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    NDT452P c3 SOT-223 CBVK741B019 F63TNR F852 NDT452P PN2222A PDF

    CVA4401

    Abstract: No abstract text available
    Text: Low Power, 400MHz High Speed Triple Buffer CORPORATION CVA4401 FEATURES • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11000V/µs • Wide Bandwidth. . . . . . . . . . . . . . . . . . . . . . . . . . 400MHz Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA


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    400MHz CVA4401 1000V/ 150mA CVA4401 400MHz, 150mA, PDF

    marking SMD crystal CODES

    Abstract: marking code H1 SMD Transistor crystal 26 Mhz marking code e1 smd SMD Marking Code jh marking code SMD mark code H1 diode MARKING CODE CG smd JH transistor marking code ff p SMD Transistor
    Text: SM8T Series Miniature SMD Crystal January 2008 • Pletronics’ SM8T Series is a miniature low profile surface mount crystal. • Package is ideal for automated surface mount assembly and reflow practices. • Tape and Reel packaging • • • • 20 MHz to 80 MHZ


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    2002/95/EC) 2002/96/EC) J-STD-020C marking SMD crystal CODES marking code H1 SMD Transistor crystal 26 Mhz marking code e1 smd SMD Marking Code jh marking code SMD mark code H1 diode MARKING CODE CG smd JH transistor marking code ff p SMD Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: V59C1G01 808/168 QC HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns


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    V59C1G01 16Mbit DDR2-533 DDR2-667 DDR2-800 DDR2-1066 875ns PDF

    is46dr32801a-5bbla1

    Abstract: 126-ball IS46DR32801A
    Text: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


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    IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb 18-compatible) DDR2-667D IS43DR32801A-3DBLI DDR2-533C IS43DR32801A-37CBLI DDR2-400B is46dr32801a-5bbla1 126-ball IS46DR32801A PDF

    IS43DR83200A

    Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
    Text: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle


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    IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 18-compatible) IS43DR32160A-37CBLI 400Mhz IS43DR32160A-5BBLI IS43DR83200A IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32 PDF

    H5TQ2G83

    Abstract: DDR3L JEP147 "2Gb DDR3 SDRAM" CL10 CL11 DDR3-1066 DDR3-1333 hynix ddr3 82ball
    Text: 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ2G43AFR-xxC H5TQ2G83AFR-xxC * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 1.0 / Dec. 2009 1 Revision History Revision No. History


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    H5TQ2G43AFR-xxC H5TQ2G83AFR-xxC H5TQ2G43AFR-xxC, H5TQ2G83AFR-xxC 648-bit 125ns DDR3-1333H DDR3-1600K. 82Ball H5TQ2G83 DDR3L JEP147 "2Gb DDR3 SDRAM" CL10 CL11 DDR3-1066 DDR3-1333 hynix ddr3 PDF