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    9620* DIODE Search Results

    9620* DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    9620* DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking


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    PDF 40B0200 5SYA1154-02 creepage0200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking


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    PDF 40B0200 5SYA1154-02 CH-5600

    ED 05 Diode

    Abstract: MS-9600
    Text: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Ω Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking


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    PDF 40B0200 5SYA1154-02 CH-5600 ED 05 Diode MS-9600

    B6 0

    Abstract: wave shaping circuit C1996 DS9636A DS9636ACJ DS9636ACN DS9636AMJ J08A RS-423 9620
    Text: DS9636A RS-423 Dual Programmable Slew Rate Line Driver General Description The DS9636A is a TTL CMOS compatible dual single ended line driver which has been specifically designed to satisfy the requirements of EIA Standard RS-423 The DS9636A is suitable for use in digital data transmission


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    PDF DS9636A RS-423 DS9636A RS-423 B6 0 wave shaping circuit C1996 DS9636ACJ DS9636ACN DS9636AMJ J08A 9620

    Untitled

    Abstract: No abstract text available
    Text: DS9636A DS9636A RS-423 Dual Programmable Slew Rate Line Driver Literature Number: SNOSC37B DS9636A RS-423 Dual Programmable Slew Rate Line Driver General Description The DS9636A is a TTL/CMOS compatible, dual, single ended line driver which has been specifically designed to satisfy the


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    PDF DS9636A DS9636A RS-423 SNOSC37B RS-423.

    DS9636A

    Abstract: DS9636ACN J08A RS-423
    Text: DS9636A RS-423 Dual Programmable Slew Rate Line Driver General Description The DS9636A is a TTL/CMOS compatible, dual, single ended line driver which has been specifically designed to satisfy the requirements of EIA Standard RS-423. The DS9636A is suitable for use in digital data transmission


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    PDF DS9636A RS-423 DS9636A RS-423. DS9636ACN J08A

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 200 IFAVM = 6130 IFSM = 45 VF0 = 0.80 rF = 0.030 Rectifier Diode V A kA V mΩ 5SDD 40B0200 Doc. No. 5SYA 1154-01 Feb-99 Features • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance


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    PDF 40B0200 Feb-99 40B0200 CH-5600

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    DRD6800A22

    Abstract: No abstract text available
    Text: DRD6800A22 Rectifier Diode DS6005 – 1 March 2011 LN28192 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 6800A 94000A VOLTAGE RATINGS Part and Ordering Number DRD6800A22 DRD6800A20 DRD6800A18 DRD6800A16


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    PDF DRD6800A22 DS6005 LN28192) 4000A DRD6800A20 DRD6800A18 DRD6800A16 DRD6800A22

    Untitled

    Abstract: No abstract text available
    Text: DRD6800A22 Rectifier Diode DS6005 – 1 March 2011 LN28192 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 6800A 94000A VOLTAGE RATINGS Part and Ordering Number DRD6800A22 DRD6800A20 DRD6800A18 DRD6800A16


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    PDF DRD6800A22 DS6005 LN28192) 4000A DRD6800A20 DRD6800A18 DRD6800A16 DRD6800A22

    AN-994

    Abstract: 9620* diode
    Text: PD - 97061C IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness


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    PDF 97061C IRFB4110PbF O-220AB AN-994. O-220AB AN-994 9620* diode

    IRFB4110PBF

    Abstract: No abstract text available
    Text: PD - 97061B IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness


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    PDF 97061B IRFB4110PbF O-220AB O-220AB IRFB4110PBF

    APT75GN120B2

    Abstract: APT75GN120B2G APT75GN120L APT75GN120LG MIC4452
    Text: TYPICAL PERFORMANCE CURVES 1200V APT75GN120B2_L G APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


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    PDF APT75GN120B2 APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* O-264 APT75GN120B2G APT75GN120L APT75GN120LG MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT75GN120J 1200V TYPICAL PERFORMANCE CURVES APT75GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


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    PDF APT75GN120J APT75GN120J E145592

    apt75gn120j

    Abstract: MIC4452
    Text: APT75GN120J 1200V TYPICAL PERFORMANCE CURVES APT75GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


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    PDF APT75GN120J apt75gn120j MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT75GN120J 1200V TYPICAL PERFORMANCE CURVES APT75GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


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    PDF APT75GN120J APT75GN120J E145592

    9620

    Abstract: A9620 "Digital Comparator" ScansUX980
    Text: 9620 DUAL DIFFERENTIAL LINE RECEIVER FAIRCHILD INTEGRATED CIRCUIT GENERAL DESCRIPTION — The 9620 is a dual differential line receiver designed to receive differential digital data from transmission lines and operate over the military and industrial temperature ranges. It can receive


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    9620DM

    Abstract: 9620DC "Digital Comparator" digital comparator 9620d 9620 9620C m 9620
    Text: 9620 DUAL DIFFERENTIAL LINE RECEIVER F A IR C H IL D LIN E A R IN TEGRATED C IR C U IT G E N E R A L D E S C R IP T IO N — The 9620 is a Dual Differential Line Receiver designed to receive d iffer­ ential digital data from transmission lines and operate over the m ilitary and industrial temperature


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    F9222

    Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
    Text: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance


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    PDF IRF9620/9621 IRFP9220/9221 IRF9220/9221 F9620/IR IRF9220 IRF9621 /IRFP9221 IRF9221 F9622/IR IRF9222 F9222 f 9222 l ir 9621 f9223 F9222 L F9222 T IRFP9620 IRFP9220

    IRKC56

    Abstract: IRKD250-16 IRKC196-16 IRK091/06 IRKD91/16A
    Text: In t e r n a t io n a l R e c t i f i e r I Diodes PART NUMBER CtntorTap» Contar Tap » Common Ctthod* CommonAnode Douttir VRRM V '3Ï w •PSI»!») SOHz 60 Hi TO <A> (24) (21) VFM RthJCDC (K/W) Nom (V) Fm -oo - Drnimd Numbtr ni Power Modul» • Diod*/Dlod«


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    PDF IRKD56/04 IRKD56/06 IRKD56/08 IRKD56/10 IRKD56/12 IRKD56/14 IRKD56/16 IRKD71/04 IRKD71/06 IRKD71/08 IRKC56 IRKD250-16 IRKC196-16 IRK091/06 IRKD91/16A

    10HF100

    Abstract: KE25004 10hf1
    Text: 1 I n t e r n a t io n a l R e c t i f i e r Diodes Part Number vrrm M •r a v io t c * ro • R U PI 50 Hi 60 Hi (A) F i x -o o - Vfm PO RthJC0C<21) (K/W) (V) Notes Dnnand Numlxr (22) 20094 (22) (22) (22) (22) (22) (22) (22) (22) (22) (22) 20094 20094


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    PDF T40HF120 10HF100 KE25004 10hf1

    IRF3620

    Abstract: IR 9622 1RF9620 irf9620 1RF9622 9623 9621 3919 ir 9621 IRF9622
    Text: SI LICONIX INC 1ÔE D • 0254735 0 0 1 4 7 4 e} 2 ■ IRF9620/9621/9622/9623 incorporated P-Channel Enhancement Mode Transistors " P 3 P I- R TO-220AB TOR VIEW PRODUCT SUMMARY O PART NUMBER V BRJDSS IRF3620 200 1.5 3.5 IRF9621 150 1.5 3.5 IRF9622 200 2.4


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    PDF A25473S IRF9620/9621Z9622/9623 O-220AB IRF3620 IRF9621 IRF9622 IRF9623 Pow/9623 T-39-19 f9621, IR 9622 1RF9620 irf9620 1RF9622 9623 9621 3919 ir 9621

    irf9220

    Abstract: IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
    Text: 7 T ti 4 m E DUUÌ4 Jj 4 ü IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 Preliminary Specification SAMSUNG S POWER MOSFETS SEMIC ONDUCTOR INC ^fl rn u u u b i - 2 0 0 Volt, 1.5 Ohm SFET DE | T T b m M E o u iv n v iM n i RoS on •d


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    PDF IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 IRF/IRFP9220, IRF9620 RF/IRFP9221, IRF9621 IRF/IRFP9222, IRF9622 IRF/IRFP9223, irf9220 IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223