TYCO PBT-GF30

Abstract: PBT-GF30 FR ASA-GF30 PBT-GF30 1.0 PBT ASA-GF30 T-GF30
Contextual Info: ,2 0 0 3 . ï M A T E D WITH. P A S S E N D ZU. ï ï DI5T 8 REVISIONS •— 1 962352/9632871 ^ COPYRIGHT 2 0 0 3 RELEASED FOR PUBLICATION FR E I F U E R V E R O E F F E N T L I C H U N 6 r y a m p rwrnppnpitfd A L L R I G H T S RESERVE D. BY A H P I N COR POR ATE D, a l l e R E I C H T E V ORB EHA LTE N.

PBT-GF30

Abstract: Tyco PBT-GF30 PBT-GF30 FR PBT-GF-30 PBT ASA-GF30 ASA-GF30 AMP PBT-GF30 PBT-GF30 12 PBTGF-30
Contextual Info: ï ï DI5T REVISIONS •— 1 962352/9632871 ^ 2003 ï M A T E D WITH. P A S S E N D ZU. 8 COPYRIGHT , 2003. RELEASED FOR PUBLICATION FR E I F U E R V E R O E F F E N T L I C H U N 6 r y a m p rwrnppnpitfd D. B Y A H P I N COR POR ATE D, AaLlLl eR IRGEHITCSH TRESERVE

IRG7PH42UPBF

Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Contextual Info: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

an 17820

Abstract: DS2107A
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jul-96 9623 A6 ANAM, K. DN604282AAB1 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

78235

Abstract: RAM- 94v-0
Contextual Info: This document was generated on 06/25/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75910-9623 Active GbX I-Trac Backplane Connector System 1.85mm by 3.70mm Pitch, GbX I-Trac™ Right Angle Header Module, Right Guided

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

mascot 8823

Abstract: mascot 9623 D-88069 SP11 MIL-HDBK-217F
Contextual Info: 9623-2023 Max. 96 W Mascot 8823 erstattet af / replaced by 9623 AC/DC SWITCH MODE POWER SUPPLIES 2023 - med / with Power Factor Correction PFC • Faste utgangsspenninger • Kortslutningssikker • Nettledning • Sekundærledning eller Hellakontakt • Lysdiode på front

F9222

Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Contextual Info: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance

Contextual Info: PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 3.7mΩ

Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRLB8743PBF

Contextual Info: PD - 96232 IRLB8743PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial use

PBT-GF30 FR

Abstract: pbt-gf30 TYCO PBT-GF30 ASA-GF30 PBTGF-30 PBT-GF-30 PBT-GF30 k PBTGF30 PBT ASA-GF30 PBT -ASA-GF30
Contextual Info: ï ï DI5T REVISIONS •— 1 962352/9632871 ^ 2003 ï M A T E D WITH. P A S S E N D ZU. 8 COPYRIGHT , 2003. RELEASED FOR PUBLICATION FR E I F U E R V E R O E F F E N T L I C H U N 6 r y a m p rwrnppnpitfd D. B Y A H P I N COR POR ATE D, AaLlLl eR IRGEHITCSH TRESERVE

Contextual Info: PD - 96231 IRLB8748PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial use

AMP MODU 2

Contextual Info: | | | Search Products Documentation Resources Home > Products > By Type > PCB Connectors My Account Customer Support > Product Feature Selector > Product Details 962321 - 1 Product Details .100 inch AMPMODU Quick Links - Auto Electronics Always EU RoHS/ELV Compliant

IRF1404ZG

Abstract: IRF1404ZGPBF
Contextual Info: PD - 96236 AUTOMOTIVE MOSFET IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = 40V

Contextual Info: 6 Rev APPROVED: DATE:_ Description RELEASED A W 0# 9623 • Date 6/22/09 Appr TITLE: .550 a h _ d p GRN LED YEL LED-1 YEL LED 1-GRN LED 1.00 [25.40] -1.230 [31.24]- -1.215 [30.86]- 0.035 [0.90] .050 T57]~ ■p2-Op4 O P1 [wuir^iwirui, 0P3 P5 i O p8 O

IRF7665S2

Abstract: IRF7665S2TR1PBF AN1035 IRF7665S2TR
Contextual Info: DIGITAL AUDIO MOSFET PD - 96239 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

Contextual Info: PD - 96230 IRLP3034PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS 40V RDS on typ. 1.4m:

Contextual Info: PD - 96238 IRFB3006GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

Contextual Info: DO NOT SCALE DIM ENSIO NS IN THIRD METRIC mm ANGLE P R O J E C T I ON D C SEALING PN 82890 STEEl F INISH 962370 929966 962980 929973 962991 929982 962997 929988 962971 929967 962981 929974 962992 929983 962998 PR . W I RE mm 2 I N5Ü2 0 mm C H . W IRE ±0, 05

AMP 962322

Contextual Info: | | | Search Products Documentation Resources Home > Products > By Type > PCB Connectors My Account Customer Support > Product Feature Selector > Product Details 962322 - 1 Product Details .100 inch AMPMODU Always EU RoHS/ELV Compliant 962322 Quick Links - Auto Electronics

IRF3620

Abstract: IR 9622 1RF9620 irf9620 1RF9622 9623 9621 3919 ir 9621 IRF9622
Contextual Info: SI LICONIX INC 1ÔE D • 0254735 0 0 1 4 7 4 e} 2 ■ IRF9620/9621/9622/9623 incorporated P-Channel Enhancement Mode Transistors " P 3 P I- R TO-220AB TOR VIEW PRODUCT SUMMARY O PART NUMBER V BRJDSS IRF3620 200 1.5 3.5 IRF9621 150 1.5 3.5 IRF9622 200 2.4

IRG7PH42U-EP

Abstract: 124 transistor
Contextual Info: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient