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    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


    Original     		PDF MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212

    ARINC 629 sim

    Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
    Text: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■


    Original     		PDF UT69151 800-645-UTMC 800-THE-1553 800-THE-1553 ARINC 629 sim m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629

    M6MGD967W33TP

    Abstract: 52-pin TSOP abzb
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    LRS1816

    Abstract: LRS1B03 LRS1B04 LRS1B06 LRS1B07 sharp page buffer
    Text: NEW PRODUCT INFORMATION LRS1B03/04/06/07 4-chip Stacked CSP Combination Memory < Outline > A multitude of multimedia services, including the distribution of information, electronic settlements of accounts and even TV-phones, are predicted thanks to improved baud rates in next generation cellular phones.


    Original     		PDF LRS1B03/04/06/07 200-Mbits LRS1B07) IC-E078 LRS1816 LRS1B03 LRS1B04 LRS1B06 LRS1B07 sharp page buffer

    28F320W18

    Abstract: Q939 Q943 28F640W18 q942 QC17 Q944 28F128W18 intel DOC Q938
    Text: 1.8 Volt Intel Wireless Flash Memory 28F320W18, 28F640W18, 28F128W18 Specification Update July 2001 Notice: The 28F640W18 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 28F640W18 28F128W18 28F320W18 Q939 Q943 q942 QC17 Q944 intel DOC Q938

    M29DW256G

    Abstract: M29dw256 spansion TSOP56
    Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) „ Asynchronous random/page read


    Original     		PDF M29DW256G 256-Mbit 32Mbit 96Mbit M29DW256G M29dw256 spansion TSOP56

    M6MGD967W33ATP

    Abstract: No abstract text available
    Text: Renesa LSIs Preliminary M6MGD967W33ATP Notice: This is not a final specification. Some parametric limits are subject to change. 100,663,296-BIT 6,291,456-WORD BY 16-BIT CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM & Stacked- µMCP (micro Multi Chip Package)


    Original     		PDF M6MGD967W33ATP 296-BIT 456-WORD 16-BIT) 432-BIT 152-WORD M6MGD967W33ATP 96M-bit 32M-bit

    BA239

    Abstract: No abstract text available
    Text: Rev. 1.0, Jun. 2010 K8P5616UZB 256Mb B-die Page NOR FLASH 256M Bit 16M x16, 32M x8 , Page Mode datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8P5616UZB 256Mb 54TSOP 50TYP 64FBGA 60Solder BA239

    Untitled

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8P5615UQA 256Mb A-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8P5615UQA 256Mb 500000h-51FFFFh 4E0000h-4FFFFFh 4C0000h-4DFFFFh 4A0000h-4BFFFFh 480000h-49FFFFh 460000h-47FFFFh 440000h-45FFFFh 420000h-43FFFFh

    sck 103 capacitor

    Abstract: TMS380C30 TI380C60A SINTEN SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A TI380FPA TMS380
    Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method


    Original     		PDF TI380C30A SPWS034 TI380FPA sck 103 capacitor TMS380C30 TI380C60A SINTEN SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A TMS380

    LRS1815

    Abstract: sharp LRS1331 sharp LRS1360 LRS1397 LRS1B03 LRS1B04 LRS1B06 LRS1B07 LRS1826 16M SRAM
    Text: NEW PRODUCT INFORMATION LRS1397 96-Mbit Flash Memory + 4-Mbit SRAM Combination Memory * Under development < Outline > LRS1397, consisting of a 96-Mbit flash memory and a 4-Mbit SRAM, is a composite memory chip that is being developed by applying stacked CSP technology to integrate the constituent memories into a large-capacity, packaged memory.


    Original     		PDF LRS1397 96-Mbit LRS1397, 96-Mbit IC-E090 LRS1815 sharp LRS1331 sharp LRS1360 LRS1397 LRS1B03 LRS1B04 LRS1B06 LRS1B07 LRS1826 16M SRAM

    TI380C30APGF

    Abstract: sck 103 capacitor SINTEN TI380C60A relay srd SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A TI380FPA
    Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method


    Original     		PDF TI380C30A SPWS034 TI380FPA TI380C30APGF sck 103 capacitor SINTEN TI380C60A relay srd SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A

    Untitled

    Abstract: No abstract text available
    Text: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics March 18, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 Low Power 1M x 16 Synchronous Dynamic Random Access Memory Chips in one MCM


    Original     		PDF ACT-D1M96S 50-MHz SCD3369-1

    Untitled

    Abstract: No abstract text available
    Text: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics May 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 1M x 16 synchronous dynamic random access memory chips in one MCM


    Original     		PDF ACT-D1M96S 50-MHz SCD3369-1

    SA204

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20900-1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed in-system


    Original     		PDF DS05-20900-1E MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball MBM29QM96DF F0306 SA204

    TI380C60A

    Abstract: No abstract text available
    Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method


    Original     		PDF TI380C30A SPWS034 TI380FPA TI380C60A

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX67L12816J3/MX67L9632J3 32M-BIT [4Mb x 8 or 2Mb x 16] Flash Plus 96M-BIT [12Mb x 8 or 6Mb x 16] MTP CMOS, 16M-BIT [2Mb x 8 or 1Mb x 16] Flash Plus 128M-BIT [16Mb x 8 or 8Mb x 16] MTP CMOS Flash Plus MTP MonoChip FEATURES • 2.7V to 3.6V operation voltage Output power supply


    Original     		PDF MX67L12816J3/MX67L9632J3 32M-BIT 96M-BIT 16M-BIT 128M-BIT MX67L9632J3: x8/x16) MX67L12816J3:

    sck 103 capacitor

    Abstract: TI380C60A SINTEN PC -1025 datasheet srd relay TMS380 TI380C25 TI380C30A TI380FPA TMS380SRA
    Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method


    Original     		PDF TI380C30A SPWS034 TI380FPA sck 103 capacitor TI380C60A SINTEN PC -1025 datasheet srd relay TMS380 TI380C25 TI380C30A TMS380SRA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYF2144V 144-Mbit Programmable Multi-Queue FIFOs 144-Mbit Programmable Multi-Queue FIFOs Features Functional Description • Memory organization ❐ Industry’s largest first in first out FIFO memory densities: 144-Mbit ❐ Selectable memory organization: x 9, × 12, × 16, × 18, × 20,


    Original     		PDF CYF2144V 144-Mbit

    SA158

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


    Original     		PDF MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball SA158

    TI380C60A

    Abstract: No abstract text available
    Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method


    Original     		PDF TI380C30A SPWS034 TI380FPA TI380C60A

    Untitled

    Abstract: No abstract text available
    Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Micron 1M x 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K x 48 x 2 Banks


    Original     		PDF ACT-D1M96S 50-MHz MIL-PRF-38534 MIL-STD-883 SCD3369-1

    DQ85

    Abstract: No abstract text available
    Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module - H eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL


    OCR Scan     		PDF ACT-D1M96S 50-MHz IL-PRF-38534 MIL-STD-883 SCD3369-1 DQ85

    str W 6553

    Abstract: No abstract text available
    Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWSQ34 - MARCH 1998 Single-Chip Token-Ring Solution IBM Token-Ring Network™ Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method and Physical-Layer Specifications


    OCR Scan     		PDF TI380C30A SPWSQ34 TI380FPA str W 6553