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    96N15P Search Results

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    96N15P Price and Stock

    Littelfuse Inc IXTT96N15P

    MOSFET N-CH 150V 96A TO268
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    DigiKey IXTT96N15P Tube 397 1
    • 1 $8.69
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    • 100 $5.42567
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    Newark IXTT96N15P Bulk 300
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    Littelfuse Inc IXTQ96N15P

    MOSFET N-CH 150V 96A TO3P
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    DigiKey IXTQ96N15P Tube 300
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    Newark IXTQ96N15P Bulk 300
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    • 100 $4.99
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    IXYS Corporation IXFC96N15P

    MOSFET N-CH 150V 42A ISOPLUS220
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    DigiKey IXFC96N15P Box 50
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    New Advantage Corporation IXFC96N15P 242 1
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    • 100 $12.12
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    IXYS Corporation IXFV96N15P

    MOSFET N-CH 150V 96A PLUS220
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    DigiKey IXFV96N15P Box
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    Littelfuse Inc IXFH96N15P

    MOSFET N-CH 150V 96A TO247AD
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    DigiKey IXFH96N15P Tube 300
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    Newark IXFH96N15P Bulk 300
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    RS IXFH96N15P Bulk 8 Weeks 30
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    CoreStaff Co Ltd IXFH96N15P 30
    • 1 $5.817
    • 10 $4.944
    • 100 $4.188
    • 1000 $4.043
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    96N15P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    96N15

    Abstract: 96N15P PLUS220SMD
    Text: PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF 96N15P 96N15PS O-247 96N15P 96N15 PLUS220SMD

    96N15P

    Abstract: IXTQ96N15P
    Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A ≤ 24 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


    Original     		PDF 96N15P 96N15P IXTQ96N15P

    96n15

    Abstract: No abstract text available
    Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


    Original     		PDF 96N15P 96n15

    96N15P

    Abstract: TEm 2411
    Text: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 96N15P 220TM E153432 96N15P TEm 2411

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFC 96N15P RDS on Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated trr = 150 V = 40 A Ω = 26 mΩ < 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF 96N15P ISOPLUS220

    96N15P

    Abstract: No abstract text available
    Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 150


    Original     		PDF 96N15P 96N15P

    96N15P

    Abstract: PLUS220SMD
    Text: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFH 96N15P IXFV 96N15P IXFV 96N15PS = 150 V = 96 A Ω = 24 mΩ < 200 ns RDS on trr N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 96N15P 96N15PS 96N15P PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 96N15P 220TM E153432

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF 96N15P 96N15PS O-247 96N15P

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP