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    96N2 Search Results

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    96N2 Price and Stock

    Littelfuse Inc IXTQ96N20P

    MOSFET N-CH 200V 96A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ96N20P Tube 271 1
    • 1 $6.17
    • 10 $6.17
    • 100 $4.70867
    • 1000 $4.70867
    • 10000 $4.70867
    		Buy Now
    Newark IXTQ96N20P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.94
    • 10000 $4.94
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    Littelfuse Inc IXFT96N20P

    MOSFET N-CH 200V 96A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT96N20P Tube 260 1
    • 1 $7.65
    • 10 $7.65
    • 100 $6.18267
    • 1000 $6.18267
    • 10000 $6.18267
    		Buy Now
    Newark IXFT96N20P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.48
    • 10000 $6.48
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    Littelfuse Inc IXFH96N20P

    MOSFET N-CH 200V 96A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH96N20P Tube 29 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.0065
    • 10000 $5.0065
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    RS IXFH96N20P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $7.74
    • 1000 $7.74
    • 10000 $7.74
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    TT electronics / BI Technologies P096N-2EA20CR2K

    PANEL POTENTIOMETER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P096N-2EA20CR2K Tray 2,080
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.15322
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    Sager P096N-2EA20CR2K 1,040
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.35
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    TT electronics / BI Technologies P096N-2EC15DR5K

    PANEL POTENTIOMETER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P096N-2EC15DR5K Tray 2,080
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.15322
    		Buy Now
    Sager P096N-2EC15DR5K 1,040
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.35
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    Find more 96N2 price and stock on Findchips.com

    96N2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ TO-3P (IXTQ) Maximum Ratings


    Original     		PDF 96N20P O-268 065B1 728B1 123B1 728B1

    96N20

    Abstract: 96N20P IXFT96N20P
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 96N20P 96N20P 96N20 IXFT96N20P

    96N20

    Abstract: 96N20P 96N2
    Text: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 96N20P O-247 96N20P 96N20 96N2

    Untitled

    Abstract: No abstract text available
    Text: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 96N20P O-247 96N20P

    96N20P

    Abstract: PLUS220SMD
    Text: IXFH 96N20P IXFV 96N20P IXFV 96N20PS PolarHTTM Power MOSFET VDSS ID25 = 200 = 96 = 24 < 200 RDS on trr V A Ω mΩ ns N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 96N20P 96N20PS O-247 96N20P PLUS220SMD

    96N20P

    Abstract: 96N20
    Text: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200 V VGSS VGSM Continous


    Original     		PDF 96N20P O-247 96N20P 96N20

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200


    Original     		PDF 96N20P 10ing 96N20P

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP