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Catalog Datasheet	MFG & Type	Document Tags	PDF
FET MARKING QG Abstract: CPH3410 Text: CPH3410 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage	Original	CPH3410 900mm2 990603TM2fXHD FET MARKING QG CPH3410	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

FET MARKING QG

Abstract: CPH3410
Text: CPH3410 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage

Original

CPH3410 900mm2 990603TM2fXHD FET MARKING QG CPH3410

PDF