FET MARKING QG
Abstract: CPH3410
Text: CPH3410 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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CPH3410
900mm2
990603TM2fXHD
FET MARKING QG
CPH3410
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CPH3410
Abstract: No abstract text available
Text: Ordering number : ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3410] 2.9 0.15 0.4 0.6 3 0.2 • 2 1
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ENN6777
CPH3410
CPH3410]
CPH3410
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PDF
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IT0251
Abstract: CPH3410 IT02515
Text: Ordering number : ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3410] 2.9 0.15 0.6 0.4 0.2 • 3 2 1
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Original
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ENN6777
CPH3410
CPH3410]
IT0251
CPH3410
IT02515
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6777 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Package Dimensions unit : mm Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 2152A [CPH3410] Specifications Absolute Maximum Ratings
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OCR Scan
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ENN6777
CPH3410
CPH3410]
900mm2X0
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PDF
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