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    998 TRANSISTOR Search Results

    998 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    998 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking code g1s

    Abstract: Q62702-F1129 D 998 TRANSISTOR
    Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO


    Original     		Q62702-F1129 OT-143 marking code g1s Q62702-F1129 D 998 TRANSISTOR PDF

    BF998

    Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
    Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129


    Original     		Q62702-F1129 OT-143 BF998 marking code GL Q62702-F1129 d 998 transistor circuit PDF

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998 PDF

    CMX998Q1

    Abstract: CMX998 tetra modulation block diagram cmx998 cmx981 d998
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/9 February 2009 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		CMX998 D/998/9 CMX981 CMX980A 100MHz 148dBc/Hz CMX998Q1 CMX998Q1 CMX998 tetra modulation block diagram cmx998 cmx981 d998 PDF

    CMX998

    Abstract: 4 QAM modem CMX998Q1 d 998 CMx7164 PLC circuit with OFDM CMX998 Calibration
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/12 February 2013 Features • Frequency Range 30MHz to 1GHz  Wide Band Noise –148dBc/Hz  C-BUS SPI compatible Serial Interface  Gain Control  Error Amplifier


    Original     		CMX998 D/998/12 CMX981, CMX980A CMX7163/CMX7164 30MHz 148dBc/Hz CMX998Q1 CMX998 4 QAM modem CMX998Q1 d 998 CMx7164 PLC circuit with OFDM CMX998 Calibration PDF

    Untitled

    Abstract: No abstract text available
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS D/998/6 July 2007 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier • Up Converter Forward Path


    Original     		CMX998 D/998/6 100MHz 148dBc/Hz CMX998Q1 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/11 September 2010 Features • Frequency Range 30MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		CMX998 D/998/11 30MHz 148dBc/Hz CMX998Q1 PDF

    CMX998

    Abstract: 2D998
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/7 October 2007 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		CMX998 D/998/7 100MHz 148dBc/Hz CMX998Q1 CMX998 2D998 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/8 January 2008 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier


    Original     		CMX998 D/998/8 100MHz 148dBc/Hz CMX998Q1 PDF

    d 998 transistor circuit

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998


    OCR Scan     		Q62702-F1129 T-143 M27ol BB5151 J8B515 d 998 transistor circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998


    OCR Scan     		62702-F1129 TheT07304 fi235bQ5 D1E174E Q1517M3 PDF

    transistor Bs 998

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129


    OCR Scan     		BB515 p270k2 transistor Bs 998 PDF

    "Piezo Buzzer" 5v

    Abstract: ic melody generator 5V piezo buzzer SD998 38khz+piezo+buzzer buzzer 5V DC piezobuzzer melody melody generator IC piezo buzzer
    Text: Super Device SD 998 SD998 Level Hold and One Shot 128 Notes Dual Tone Melody Generator Features . Piezo-buzzer or speaker output driven by external transistor. . Level hold or one-shot function can be re-triggerable. . 1.3V to 3.3V power supply . Built in oscillator.


    OCR Scan     		SD998 SD998 PME0003 "Piezo Buzzer" 5v ic melody generator 5V piezo buzzer 38khz+piezo+buzzer buzzer 5V DC piezobuzzer melody melody generator IC piezo buzzer PDF

    bh 27701

    Abstract: BH 27.701 A
    Text: ' 998 ‘ CHOPPER-STABILIZED, PRECISION HALL-EFFECT LATCHES The A3280- and A 3281—Hall-effect latches are extremely temperature-stable and stress-resistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature


    OCR Scan     		A3280-- 3281--Hall-effect bh 27701 BH 27.701 A PDF

    ERICSSON BML

    Abstract: No abstract text available
    Text: ER IC S SO N $ Octoberl 998 PBL 3766, PBL 3766/6 Subscriber Line Interface Circuit Description Key Features The PBL 3766 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3766 SLIC facilitates the


    OCR Scan     		1522-PBL S-164 ERICSSON BML PDF

    1734D

    Abstract: RCA-TIP120
    Text: G E SOLID STATE 3875081 G E DÏ SOLID m T | 3 A 7S DA 1 D017336 Ô |~~ 01É STATE 1733 " ' 'V' 1 3 D Darlington Power Transistors_ TIP120, TIP121, TIP122 File Number 998 8-Ampere N-P-N Darlington Power Transistors * 60, 80, and 100 Volts, 65 Watts


    OCR Scan     		D017336 TIP120, TIP121, TIP122 TQ-220AB RCA-TIP120, TIP121 TIP122 1734D RCA-TIP120 PDF

    74hct266

    Abstract: 6264LP 27C64 ROM 6264LP-15 6264l 74HC74 mte maxim 300BD 74HC373 GP Batteries 1604A
    Text: M A X I 90 Evaluation Kit Ordering Information PART_TEMP. MAX190EVKIT-DIP* * RANGE BOARD TYPE 0‘C to +70‘C Through-Hole C ontact factory for availability To evaluate the MAX191, order a free sample of the MAX191BCNG by calling toll free 1-800-998-8800 or


    OCR Scan     		MAX190 80C32-based 12-bit RS-232 MAX191 MAX190, 74hct266 6264LP 27C64 ROM 6264LP-15 6264l 74HC74 mte maxim 300BD 74HC373 GP Batteries 1604A PDF

    Untitled

    Abstract: No abstract text available
    Text: 33E D • Ô23b350 001bô30 1 M S I P Silicon N-Channel MOSFET Tetrode BF 998 SIEMENS/ SPCL-, SEMICONDS • Short-channel transistor w ith high S /C quality factor • For low-noise, gain-controlled input stages up to 1 GHz T -3 I-2 S ' Type M arkin g O rd erin g coda


    OCR Scan     		23b350 62702-F1129 E3b32Q PDF

    IMB Film Capacitors

    Abstract: PBL3764A Ericsson GM 22 Ericsson TN R4 CT PBL 405
    Text: ERICSSON ^ Octoberl 998 PBL 3764A/4, PBL 3764A/6 Subscriber Line Interface Circuit Description Key Features Note: A ll data is also valid for PBL 3764A/6, except maximum ratings for battery' voltage. See next page The PBL 3764A/4 Subscriber Line Interface Circuit (SLIC) is a bipolar integrated


    OCR Scan     		764A/4, 764A/6 764A/6, 764A/4 PBL3764/4N PBL3764A/4N) PBL3764/4QN PBL3764A/4QN) IMB Film Capacitors PBL3764A Ericsson GM 22 Ericsson TN R4 CT PBL 405 PDF

    494 ic

    Abstract: altera board
    Text: Operating Requirements for Altera Devices J a n u a r y 1 998, ver. introduction D a ta S h e e t Altera devices combine unique programmable logic architectures with advanced CMOS processes to provide exceptional performance and reliability. To maintain the highest possible performance and reliability of


    OCR Scan     		PDF

    TRANSISTOR BH RW

    Abstract: No abstract text available
    Text: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape


    OCR Scan     		62702-F1129 1200MÍ 900MHz 800MHz /400MHz 300MH 00MHz -921s TRANSISTOR BH RW PDF

    VOLTAGE LEVEL RELAY SM 125 230

    Abstract: No abstract text available
    Text: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSJ9160D, FSJ9160R -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; VOLTAGE LEVEL RELAY SM 125 230 PDF

    TIPI20

    Abstract: No abstract text available
    Text: File Number TIP120, TIP121, TIP122 998 8-Ampere N-P-N Darlington Power Transistors 60, 80, and 100 Volts, 65 Watts Gain of 1000 at 0.5 A Gain of 1000 at 3 A T E R M IN A L D E S IG N A T IO N S o Features: • Operates from 1C without predriver ■ Low leakage at high temperature


    OCR Scan     		TIP120, TIP121, TIP122 -220A TIP121 TIP122 driven121. 92CS-2I9T« T/P122. TIPI20 PDF

    2SC998

    Abstract: 2sc998 transistor 10N40 0F34 Toshiba 2SC998
    Text: 5; ' J D y N P N I t i 5 > * = y J , U 7 L s - ï B h 5 y S ; Z 5 > SILICON NPN EPITAXIAL PLANAR TRANSISTOR O 1 5 0 ~ 1 7 5MHz * 2 s c 998 ) o VHF Power Amplifier Application (Low Supply a f i l i é INDUSTRIAL APPLICATIONS Vo 11age Use) ° Un it: mm Land-Mobile Power Amplifier and Frequency


    OCR Scan     		2SC998 0t-10( 0f-34( 2SC998 2sc998 transistor 10N40 0F34 Toshiba 2SC998 PDF