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NXP Semiconductors BF998,235 RF MOSFET 8V SOT143B
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NXP Semiconductors BF998,215 RF MOSFET 8V SOT143B
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NXP Semiconductors BF998R,215 RF MOSFET 8V SOT143R
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NXP Semiconductors BF998R,235 RF MOSFET 8V SOT143R
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NXP Semiconductors BF998WR,115 RF MOSFET 8V CMPAK-4
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BF998 Datasheets (80)

Part	Manufacturer	Description	Datasheet Type	PDF
BF998	Infineon Technologies	Single Non Biased; Package: PG-SOT143-4; I_D (max): 30.0 mA; P_tot (max): 200.0 mW; g_fs (typ): 24.0 mS; G_p (typ): 20.0 dB; F (typ): 1.8 dB;	Original	PDF
BF998	Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF
BF998	Infineon Technologies	Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz.	Original	PDF
BF 998	Infineon Technologies	TRANS MOSFET N-CH 12V 0.03A 4SOT-143	Original	PDF
BF998	NXP Semiconductors	BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS	Original	PDF
BF998	Philips Semiconductors	Silicon N-Channel MOSFET Tetrode	Original	PDF
BF998	Philips Semiconductors	Silicon N-Channel Dual Gate MOS-FET	Original	PDF
BF998	Siemens	Cross Reference Guide 1998	Original	PDF
BF998	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BF998	Siemens	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)	Original	PDF
BF998	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF
BF998	Vishay Telefunken	TRANS MOSFET N-CH 12V 0.03A 4SOT-143	Original	PDF
BF998	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BF998	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

BF998	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF998	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BF998	Philips Semiconductors	Silicon n-channel dual gate MOS-FET	Scan	PDF
BF998	Philips Semiconductors	Silicon N-Channel Dual Gate MOS-FET	Scan	PDF
BF998,215	NXP Semiconductors	BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal	Original	PDF
BF998,215	NXP Semiconductors	Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I_D: 30 mA; I_DSS: 2 to 18 mA; I_DSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V_DSmax: 12 V; Y_FS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd	Original	PDF

BF998 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bf998rb Abstract: BF998 BF998R BF998RAW BF998RW application BF998 Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance	Original	BF998/BF998R/BF998RW BF998R BF998 BF998RW D-74025 23-Jun-99 bf998rb BF998RAW application BF998	PDF
application BF998 Abstract: BF998R 800MHz BF998 Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance	Original	BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 application BF998 BF998R 800MHz	PDF
BF998RAW-GS08 Abstract: No abstract text available Text: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure	Original	BF998/BF998R/BF998RW 2002/95/EC 2002/96/EC OT143 OT143R OT343R BF998 OT143 18-Jul-08 BF998RAW-GS08	PDF
BF998R 800MHz Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998 Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance	Original	BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 BF998R 800MHz BF998 VISHAY BF998RAW BF998 depletion application BF998	PDF
BF998 vishay Abstract: application BF998 12864 Text: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance	Original	BF998 BF998R BF998RW OT-143 OT-143R OT-343R OT-143 OT-143R BF998 vishay application BF998 12864	PDF
BF998B-GS08 Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08 Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance	Original	BF998 BF998R BF998RW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343R OT-143 BF998B-GS08 NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08	PDF
BB405 Abstract: BF998WR 4814 mosfet dual-gate MGC480 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR	Original	BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480	PDF
SOT-343 Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF998 Q62702-F1586 OT-343 Jul-30-1996 SOT-343 G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note	PDF
bf998 Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration	Original	BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R	PDF
Untitled Abstract: No abstract text available Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance	Original	BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R	PDF
BF998R Abstract: BF998 MGA002 MGE802 application BF998 dual-gate Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer	Original	BF998; BF998R MAM039 R77/02/pp15 BF998R BF998 MGA002 MGE802 application BF998 dual-gate	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance	Original	BF998WR R77/02/pp13	PDF
BF 998 Abstract: BF998 BF998R 4551 Text: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R	Original	BF998/BF998R BF998 BF998R D-74025 07-Mar-97 BF 998 4551	PDF
BF998RW Abstract: BF998 BF998R BF998RAW application BF998 Text: BF998/BF998R/BF998RW Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance	Original	BF998/BF998R/BF998RW BF998R BF998 BF998RWmprove D-74025 23-Jun-99 BF998RW BF998RAW application BF998	PDF

bf998 Abstract: bf998 mosfet tetrode application note VPS05178 Text: BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178	PDF
Untitled Abstract: No abstract text available Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!	Original	BF998. BF998 OT143 BF998R OT143R	PDF
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T	PDF
BF998 depletion Abstract: BF988 bf988 sot 143 BF998 Text: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features	OCR Scan	BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143	PDF
BF998 Abstract: No abstract text available Text: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes	OCR Scan	BF998/BF998R/BF998RW BF998 BF998R 23-Jun-99 BF998RW	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	BF998 Q62702-F1586 OT-343 fl235bG5	PDF
MAM184 Abstract: MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF998 FEATURES APPLICATIONS • Short channel transistor with high ratio I YfSl / Cis • VHF and UHF applications such as television tuners with 12 V supply voltage and professional	OCR Scan	OT143 BF998 MAM184 MAM184 OT143) MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking	PDF
TRANSISTOR mosfet BF998 Abstract: BF998 SIEMENS BF998 marking code Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	BF998 Q62702-F1586 OT-343 TRANSISTOR mosfet BF998 BF998 SIEMENS BF998 marking code	PDF
G2S 076 AA Abstract: No abstract text available Text: Tem ic BF998RW S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • • •	OCR Scan	BF998RW BL998RW 07-Nov-97 G2S 076 AA	PDF
Untitled Abstract: No abstract text available Text: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.	OCR Scan	BF998WR OT343R	PDF

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BF998 Datasheets (80)

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SOT-343

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BF 998

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S852T

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MAM184

TRANSISTOR mosfet BF998

G2S 076 AA

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