Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BF994S Search Results

    SF Impression Pixel

    BF994S Price and Stock

    NXP Semiconductors BF994S,215

    RF MOSFET 15V SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF994S,215 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Bristol Electronics BF994S,215 1,192
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components BF994S,215 953
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $0.875
    • 10000 $0.875
    		Buy Now
    BF994S,215 953
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $0.875
    • 10000 $0.875
    		Buy Now

    NXP Semiconductors BF994S

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BF994S 50,322
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components BF994S 40,257
    • 1 $2.05
    • 10 $2.05
    • 100 $2.05
    • 1000 $0.7175
    • 10000 $0.615
    		Buy Now
    BF994S 78
    • 1 $0.54
    • 10 $0.45
    • 100 $0.36
    • 1000 $0.36
    • 10000 $0.36
    		Buy Now

    Philips Semiconductors BF994S

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange BF994S 1,292
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    BF994S Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BF 994 S Infineon Technologies TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF994S International Rectifier N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF994S NXP Semiconductors BF994S - N-channel dual-gate MOS-FET - CIS TYP: 2.5 pF; COS: 1 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 1 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 2 V; VDSmax: 20 V; YFS min.: 15 mS Original PDF
    BF994S Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF
    BF994S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF994S Siemens Cross Reference Guide 1998 Original PDF
    BF994S Siemens Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) Original PDF
    BF994S Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF994S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF994S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF994S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF994S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF994S Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF994S Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF994S Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF994S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Scan PDF
    BF994S,215 NXP Semiconductors BF994 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, 4 PIN, FET RF Small Signal Original PDF
    BF994S,215 NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 2.5 pF; COS: 1 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 1 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 2 V; VDSmax: 20 V; YFS min.: 15 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF994SA Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF994SB Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF

    BF994S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF994

    Abstract: BF994S BF994SA BF994SB sot-143 vishay telefunken
    Text: BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		PDF BF994S BF994 D-74025 20-Jan-99 BF994S BF994SA BF994SB sot-143 vishay telefunken

    gl 1117 B

    Abstract: Bf 994 BF994S
    Text: BF994S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages especially for VHF TV-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original     		PDF BF994S BF994S D-74025 03-Mar-97 gl 1117 B Bf 994

    BF994S

    Abstract: No abstract text available
    Text: BF994S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF994S 2002/95/EC 2002/96/EC OT-143 08-Apr-05 BF994S

    Untitled

    Abstract: No abstract text available
    Text: BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		PDF BF994S BF994 D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF994S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF994S OT-143 D-74025 20-Aug-04

    BF994S

    Abstract: dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		PDF BF994S OT143 R77/02/pp8 BF994S dual-gate

    gl 1117 B

    Abstract: BF994S
    Text: BF994S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages especially for VHF TV-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original     		PDF BF994S BF994S D-74025 16-Apr-96 gl 1117 B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		PDF BF994S OT143 R77/02/pp8

    Untitled

    Abstract: No abstract text available
    Text: BF994S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF994S 2002/95/EC 2002/96/EC OT-143 D-74025 02-Mar-05

    BF994S

    Abstract: voltage transducer
    Text: BF994S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF994S OT-143 D-74025 20-Aug-04 BF994S voltage transducer

    BF994

    Abstract: BF994S BF994SA BF994SB
    Text: BF994S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		PDF BF994S BF994 D-74025 20-Jan-99 BF994S BF994SA BF994SB

    BF994S marking code

    Abstract: FET MARKING CODE Marking G2 BF994S sot143 marking code G2 Dual-Gate Mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF994S OT143 BF994S marking code FET MARKING CODE Marking G2 BF994S sot143 marking code G2 Dual-Gate Mosfet dual-gate

    gl 1117 ax

    Abstract: BF994
    Text: Tem ic BF994S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. M Applications Input and m ixer stages especially for V H F TV-tuners. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF994S BF994S 03-Mar-97 gl 1117 ax BF994

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    BF994S marking code

    Abstract: BF994S MOSFET Tetrode
    Text: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and


    OCR Scan     		PDF BF994S 711002b 00341117b OT143 BF994S marking code BF994S MOSFET Tetrode

    BF994S

    Abstract: Marking G2 sot143 code marking MS mosfet marking code gg
    Text: 7110SEL G D b 7 5 ti4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 143 microminiature envelope w ith source and substrate interconnected and intended fo r V H F applications in television tuners.


    OCR Scan     		PDF BF994S OT143 BF994S Marking G2 sot143 code marking MS mosfet marking code gg

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code


    OCR Scan     		PDF flS3b32Q BF994S Q62702-F963 Q62702-F1020 T-31-25 23b320

    BF994S

    Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
    Text: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.


    OCR Scan     		PDF bbS3T31 BF994S OT143 BF994S L7E transistor n Power mosfet depletion free transistor bs 200

    BF994S marking code

    Abstract: BF994S
    Text: I I t.3E D • 1,1^3^24 G Ü 7 4 3 1 0 «SIC3 BF994S A napc/philips sehicond FO R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE O F H A N D B O O K SC07 O R D A T A S H E E T SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope with source and


    OCR Scan     		PDF 7M310 BF994S OT143 BF994S marking code BF994S

    Untitled

    Abstract: No abstract text available
    Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and


    OCR Scan     		PDF BF994S 711002b 003407b OT143

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.


    OCR Scan     		PDF bbS3T31 QQ23ti2S BF994S OT143

    Untitled

    Abstract: No abstract text available
    Text: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.


    OCR Scan     		PDF 711002b BF994S OT143

    BF994S

    Abstract: No abstract text available
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF994S APPLICATIONS • VHF applications in television tuners. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT 143


    OCR Scan     		PDF BF994S BF994S

    s525

    Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
    Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52


    OCR Scan     		PDF BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T