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Nisshinbo Micro Devices RP509Z001D-E2-F IC REG BUCK ADJ 1A 6WLCSP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RP509Z001D-E2-F	Cut Tape			1	1 $0.72 10 $0.51 100 $0.4006 1000 $0.34342 10000 $0.32915	Buy Now
	RP509Z001D-E2-F	Digi-Reel			1	1 $0.72 10 $0.51 100 $0.4006 1000 $0.34342 10000 $0.32915	Buy Now
	RP509Z001D-E2-F	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.31348	Buy Now
Mouser Electronics	RP509Z001D-E2-F					1 $0.71 10 $0.577 100 $0.499 1000 $0.415 10000 $0.287	Get Quote
Nisshinbo Micro Devices RP509Z001C-E2-F IC REG BUCK ADJ 1A 6WLCSP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RP509Z001C-E2-F	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.31348	Buy Now
Mouser Electronics	RP509Z001C-E2-F					1 - 10 - 100 - 1000 - 10000 $0.301	Get Quote
Sensitron Semiconductors 1DB48-109Z-001 GRP B SAMPLES - Virtual or Non-Physical Inventory (Software & Literature) (Alt: 1DB48-109Z-001 GR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	1DB48-109Z-001 GRP B SAMPLES	No Container			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sensitron Semiconductors 1DB48-109Z-001 GROUP A TEST - Virtual or Non-Physical Inventory (Software & Literature) (Alt: 1DB48-109Z-001 GR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	1DB48-109Z-001 GROUP A TEST	No Container			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sensitron Semiconductors 1DB48-109Z-001 REV M - Bulk (Alt: 1DB48-109Z-001 REV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	1DB48-109Z-001 REV M	Bulk		26 Weeks	20	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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9Z001 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2052-5636-02 100pf Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION	Original	PDF	NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS
NE5520379A Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A
silicon power gmbh Abstract: NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A
12c5a Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.	Original	PDF	NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
NE5520379A Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A
LM50 sot23-5 Abstract: LMS48 FPD87370 USBN9604 lmx2324 SSOP-EIAJ28 7I SOT23-3 STT150 DS92LV1021A fpd8737 Text: 2005^ 4 ^ 1 m m jim m m t t * * * « it m * * m m m m m z m m m m z * . u tm u m h * * * » » \|t f c g « M 2 -7 n ^ fts a » a « * ' Ä lttlÄ Ä B te ir a f e >m ' « « f t * X \|I » J : TO m » • REID M U M ttA ' K ä U M U M ß U l Mtklrm •	OCR Scan	PDF	LM6181 Narrow-16, LM7171 CERPACK-10, LM7372 LMC6035 LM50 sot23-5 LMS48 FPD87370 USBN9604 lmx2324 SSOP-EIAJ28 7I SOT23-3 STT150 DS92LV1021A fpd8737