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    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    9A MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC75

    Abstract: S-71201-Rev SIB414DK-T1-E3
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • TrenchFET Power MOSFET


    Original     		PDF SiB414DK SC-75-6L-Single 08-Apr-05 SC75 S-71201-Rev SIB414DK-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single SiB414DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-75

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • TrenchFET Power MOSFET


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single SiB414DK-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single SiB414DK-T1-GE3 11-Mar-11

    SC-75

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single 18-Jul-08

    SC-75

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free


    Original     		PDF SiB414DK SC-75 SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    STP9NM60N

    Abstract: STF9NM60 F9NM60N STD9NM60N STX9
    Text: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N


    Original     		PDF STD9NM60N STD9NM60N-1 STP9NM60N STF9NM60N O-220 STF9NM60N STP9NM60N O-220 STF9NM60 F9NM60N STX9

    Untitled

    Abstract: No abstract text available
    Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP

    irf630

    Abstract: 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220
    Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP irf630 200V AUTOMOTIVE MOSFET irf630 datasheet irf630 equivalent IRF630FP JESD97 irf630 to-220

    STD9NM60N

    Abstract: STF9NM60N JESD97 STD9NM60N-1 STP9NM60N F9NM60N P9NM60N
    Text: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features VDSS @Tjmax Type RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N


    Original     		PDF STD9NM60N STD9NM60N-1 STP9NM60N STF9NM60N O-220 STD9NM60N STP9NM60N O-220 STF9NM60N JESD97 STD9NM60N-1 F9NM60N P9NM60N

    IRF630

    Abstract: mosfet irf630fp IRF630FP JESD97
    Text: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP O-220 IRF630 mosfet irf630fp IRF630FP JESD97

    TO-220 morocco st 0148

    Abstract: STB120NH03L STP120NH03L
    Text: STB120NH03L STP120NH03L N-Channel 30V - 0.005Ω - 9A - TO-220/D2PAK STripFET III Power MOSFET for DC-DC Conversion General features Type VDSS RDS on ID STB120NH03L STP120NH03L 30V 30V <0.0055Ω <0.0055Ω 9A Note 1 9A Note 1 3 • Typical RDS(on) = 0.005Ω @ 10V


    Original     		PDF STB120NH03L STP120NH03L O-220/D2PAK O-220 TO-220 morocco st 0148 STP120NH03L

    IRF630MFP

    Abstract: st irf630m IRF630M JESD97 irf630mf
    Text: IRF630M IRF630MFP N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF630M 200 V < 0.40 Ω 9A IRF630MFP 200 V < 0.40 Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances


    Original     		PDF IRF630M IRF630MFP O-220 /TO-220FP O-220FP O-220 IRF630MFP st irf630m IRF630M JESD97 irf630mf

    STW6N95K5

    Abstract: STP6N95K5 6N95K5 STD6N95K5 STF6N95K5 6N95K
    Text: STD6N95K5, STF6N95K5 STP6N95K5, STW6N95K5 N-channel 950 V, 1 Ω, 9 A TO-220, TO-220FP, TO-247, DPAK Zener-protected SuperMESH5 Power MOSFET Features Type VDSS RDS on max. STD6N95K5 STF6N95K5 STP6N95K5 950 V < 1.25 Ω STW6N95K5 ID PW 9A 90 W 9A (1) 9A


    Original     		PDF STD6N95K5, STF6N95K5 STP6N95K5, STW6N95K5 O-220, O-220FP, O-247, STP6N95K5 STW6N95K5 STP6N95K5 6N95K5 STD6N95K5 STF6N95K5 6N95K

    D9N10

    Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
    Text: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD9N10 STD9N10-1 O-251) O-252) O-251 O-252 D9N10 STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions

    IRF630MFP

    Abstract: st irf630m IRF630M st 393 JESD97 irf630mf
    Text: IRF630M IRF630MFP N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF630M 200 V < 0.40 Ω 9A IRF630MFP 200 V < 0.40 Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances


    Original     		PDF IRF630M IRF630MFP O-220 /TO-220FP O-220 O-220FP IRF630MFP st irf630m IRF630M st 393 JESD97 irf630mf

    SiB412DK

    Abstract: SC75 SiB412DK-T1-E3
    Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB412DK SC-75-6L-Single SiB412DK-T1-E3 08-Apr-05 SC75

    Untitled

    Abstract: No abstract text available
    Text: SiB417AEDK Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. ID (A) 0.032 at VGS = - 4.5 V - 9a 0.045 at VGS = - 2.5 V - 9a 0.063 at VGS = - 1.8 V 0.120 at VGS = - 1.5 V - 9a - 8.8 0.230 at VGS = - 1.2 V - 6.4


    Original     		PDF SiB417AEDK SC-75-6L-Single SC-75 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    D9N10

    Abstract: STD9N10 STD9N10-1 STD9N10T4 T432 airbag
    Text: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD9N10 STD9N10-1 O-251) O-252) O-251 D9N10 STD9N10 STD9N10-1 STD9N10T4 T432 airbag

    SiB411DK

    Abstract: SC75 SiB411DK-T1-E3
    Text: SiB411DK Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V - 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB411DK SC-75-6L-Single SiB411DK-T1-E3 08-Apr-05 SC75

    Untitled

    Abstract: No abstract text available
    Text: SiB457EDK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.079 at VGS = - 1.8 V - 9a 0.157 at VGS = - 1.5 V -2 Qg (Typ.) 13 nC PowerPAK SC-75-6L-Single


    Original     		PDF SiB457EDK SC-75-6L-Single SC-75 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12