transistor 9fb
Abstract: 9FC SOT23 marking code 9FB 9fc marking code marking 9fb 9fb transistor bc807 BC808 bc807 marking code transistor BC807
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage
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Original
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BC807/BC808
BC817/BC818
OT-23
BC807
BC808
-100mA
-300mA
transistor 9fb
9FC SOT23
marking code 9FB
9fc marking code
marking 9fb
9fb transistor
bc807
BC808
bc807 marking code
transistor BC807
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KC807 BC807 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain.
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Original
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KC807
BC807)
OT-23
300mA
KC807-16
KC807-25
KC807-40
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PDF
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smd 9FB
Abstract: marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40
Text: Transistors SMD Type PNP Silicon AF Transistors KC807 BC807 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1
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Original
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KC807
BC807)
OT-23
300mA
KC807-16
KC807-25
KC807-40
smd 9FB
marking 9fb
SMD MARKING 9fB
marking AF
BC807
KC807-25
KC807-40
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PDF
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BC808
Abstract: 9fb transistor bc807 BC817 BC818 026 pnp
Text: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted
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Original
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BC807/BC808
BC817
BC818
OT-23
BC807
BC808
-500mA,
-50mA
BC808
9fb transistor
bc807
BC818
026 pnp
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PDF
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UTC marking
Abstract: No abstract text available
Text: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted
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Original
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BC807/BC808
BC817
BC818
OT-23
BC807
BC808
QW-R206-026
UTC marking
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PDF
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BC807
Abstract: BC808 BC817 BC818 9FC marking sot-323 9FC SOT23
Text: UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 Lead-free: BC807L/BC808L Halogen-free: BC807G/BC808G
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Original
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BC807/BC808
BC817
BC818
BC807L/BC808L
BC807G/BC808G
BC807-x-AE3-R
BC808-x-AE3-R
BC807-x-AL3-R
BC808-x-AL3-R
BC807L-x-AE3-R
BC807
BC808
BC818
9FC marking sot-323
9FC SOT23
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PDF
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HBC807
Abstract: marking 9fb 9FC SOT23
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
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Original
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HE6830
HBC807
HBC807
OT-23
marking 9fb
9FC SOT23
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PDF
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9FC SOT23
Abstract: No abstract text available
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage
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Original
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BC807/BC808
BC817/BC818
OT-23
BC807
BC808
BC808
9FC SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 Lead-free: BC807L/BC808L Halogen-free:BC807G/BC808G
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Original
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BC807/BC808
BC817
BC818
BC807L/BC808L
BC807G/BC808G
BC807-x-AE3-R
BC808-x-AE3-R
BC807-x-AL3-R
BC808-x-AL3-R
BC807L-x-AE3-R
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PDF
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HBC807
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
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Original
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HE6830
HBC807
HBC807
OT-23
200oC
183oC
217oC
260oC
245oC
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PDF
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BC807
Abstract: marking code 9FB marking 9fb BC808 9FC SOT23
Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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Original
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BC807/BC808
BC817/BC818
OT-23
BC807
BC808
BC807
marking code 9FB
marking 9fb
BC808
9FC SOT23
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PDF
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9FC SOT23
Abstract: BC807 BC808
Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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Original
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BC807/BC808
BC817/BC818
OT-23
BC807
BC808
9FC SOT23
BC807
BC808
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PDF
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marking CODE "25M" SOT23 -3
Abstract: BC80725MTF fairchild sot-23 Device Marking pc MARKING 25M SOT23 BC80840MTF
Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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Original
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BC807/BC808
BC817/BC818
OT-23
BC807
BC808
BC803
OT-23
marking CODE "25M" SOT23 -3
BC80725MTF
fairchild sot-23 Device Marking pc
MARKING 25M SOT23
BC80840MTF
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PDF
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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Original
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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PDF
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9FC SOT23
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Collector Emitter Voltage
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OCR Scan
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BC807/BC808
OT-23
BC817/BC818
BC807
BC808
9FC SOT23
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PDF
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marking code va transistors
Abstract: BC807 BC808 sot-23 Marking sj
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • SUITABLE FO R A F D R IV E R S T A G E S AN D LOW PO W ER O U TPU T S TA G E S • Com plem en t to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra c te r is tic
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OCR Scan
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BC807/BC808
BC817/BC818
BC807
BC808
OT-23
BC807
002S0bli
marking code va transistors
BC808
sot-23 Marking sj
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PDF
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smd code 9fc
Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Text: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti fier utilize advanced processing techniques to
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OCR Scan
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S6702
OT-23.
BA-481
EIA-541.
smd code 9fc
smd 2d 1002 -reel
smd diode 2d
mosfet ir 840
SOT-23 marking 2f p-Channel
sot-23 MARKING CODE nm
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PDF
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