P-DIP18P

Abstract: VQ300IP v020 AN0130NA ANO120 VQ2004P VQ2006J VQ2006P VQ3001J VQ7254P
Contextual Info: - ft X t m VQ2004P VQ2006J VQ2006P VG3001J VQ3001P VQ7254J VQ7254P AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA AP0116NA AP0120NA AP0130NA AP0132NA AP014QNA TC0604WG TN0102N2 TNQ102N3 TM0102ND TN0mK2 TN0104N3 TN0104ND TN0106N2 TNQ1Q6N3 TN0106ND TN0110N2 TN0110N3

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

EIGHT MOSFET ARRAY

Abstract: Piezoelectric 1Mhz AN0130 "high voltage Piezoelectric transducer" 100 Volt mosfet schematic circuit AN0130NA p channel mosfet 100v AN0116 AN0116NA AN0120
Contextual Info: AN0116 AN0132 AN0120 AN0140 AN0130 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information * * † Order Number / Package BVDSS/ BVDGS min RDS(ON) (max) ID(ON) (min) IDSS* @ VDS = 100V Max IDSS* @ VDS = 250V Max 18-Lead Plastic DIP

EIGHT MOSFET ARRAY DIP-18

Abstract: AN0116NA AN0116NB AN0116ND AN0116WG AN0120NA AN0120NB AN0130NA AN0130NB SOW-20
Contextual Info: SUPERTEX INC Dl D Ì 07735^5 DDQ17SÖ 0 f * AN01 8 Channel Power M O SFET Array Monolithic N-channel Enchancement Mode Ordering Information b v dss/ ^D SfO N ) min) 160V 200V 300V 320V 400V (max) 350Q 3000 300n 350n 350Q JI b v dqs <3>V’ d s. = 100V Max

AN0140N

Contextual Info: 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package B VDSS/ = 18-Lead Plastic Plastic DIP SOW-20* — AN0116NA AN0116WG — — AN0120NA — AN0120ND 25mA — — AN0130NA — AN0130ND 350ft 25mA — 350ÌÌ

8 Channel Power Mosfet Array

Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
Contextual Info: SUPERTEX INC Dl dÌ J 07735*15 DDQ17SÖ Q 7 ~ V ^ ^ 5 ~ AN01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information Order Number / Package b v dss/ 1 * V DS = BVd0S min ^D S {O N ) ' d (ON) (max) (min) 100V Max 1nA 'D SS

Teledyne Semiconductor

Abstract: AN0110N AN0110NA AN0120N AN0120NA AN0130N AN0130NA AN0140N AN0140NA AN01-10
Contextual Info: 2ÖE D TELEDYNE COMPONENTS • öTlTbOE QQQtabT 7 WÊ î î S ' S ü * îg j“ H AN0130N, AN0140N SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS ORDERING INFORMATION AN0110NA 100V,100Q 18 Pin Plastic DIP Description each channel AN0120NA

Contextual Info: TELEDYNE 2ÖE D C O MP O N E NT S • aT17t.02 QQQbaLT 7 _ ■ ANOllON, AN0120N AN0130N, AN0140N tÏT ,IC3H=üÆ\ 5 Z SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS 7 ORDERING INFORMATION 18 Pin Plastic DIP DtscriptIon each channel AN0110NA

DIODE G7

Abstract: AN0116 10MVA AN0116NA AN0116ND AN0116WG AN0120 AN0120NA AN0140ND AN0130
Contextual Info: AN0116 AN0132 fi Supertexinc. AN0140 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package BVdss/ Plastic SOW-20* 25mA 1nA — AN0116NA AN0116WG AN0116ND 3000 25mA — —