CB417
Abstract: AN1471 CB429 F126
Text: AN1471 APPLICATION NOTE AXIAL PLASTIC DIODES: PRECAUTIONS FOR LEAD BENDING AND CUTTING C. LEBRERE INTRODUCTION The use of inappropriate techniques or unsuitable tools for lead bending or cutting can affect the long-term reliability of the device, or even damage it. This can be caused by mechanical stress inflicted on the die, if
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AN1471
Abstract: M24XXX
Text: AN1471 Application note What happens to the M24xxx I²C EEPROM if the I²C bus communication is stopped? This Application note describes what can be attempted to set an M24xxx memory back to a known state if it has been suddenly stopped before completion of the current I²C instruction.
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AN1471
Abstract: IC MASTER 2001
Text: AN1471 APPLICATION NOTE What Happens to the M24xxx I²C EEPROM If the I²C Bus Communication is Stopped? This document describes what needs to be done to set an M24xxx device back to a known state if it has been suddenly stopped before completion of the current I²C instruction, for example due to a power failure
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IC MASTER 2001
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AN1471
Abstract: ic eeprom conclusion of can bus application in automotive n
Text: AN1471 Application note What happens to the M24xxx I²C EEPROM if the I²C bus communication is stopped? This application note describes what can be attempted to set an M24xxx memory back to a known state if it has been suddenly stopped before completion of the current I²C instruction.
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AN1471
M24xxx
AN1471
ic eeprom
conclusion of can bus application in automotive n
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AN1471
Abstract: ic eeprom
Text: AN1471 APPLICATION NOTE What Happens to the M24xxx I²C EEPROM If the I²C Bus Communication is Stopped? This document describes what can be attempted to set an M24xxx device back to a known state if it has been suddenly stopped before completion of the current I²C instruction, for example due to a power failure
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AN1471
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ic eeprom
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STTH3L06U
Abstract: S06 rectifier STTH3L06B smb marking stmicroelectronics JESD97 STTH3L06 STTH3L06B-TR STTH3L06RL STTH3L06-RL STTH3L06S
Text: STTH3L06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 0.85 V trr (typ) 60 ns A K K A NC FEATURES AND BENEFITS • ■ ■ ■ DO-201AD STTH3L06 Ultrafast switching
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STTH3L06B
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S06 rectifier
STTH3L06B
smb marking stmicroelectronics
JESD97
STTH3L06
STTH3L06B-TR
STTH3L06RL
STTH3L06-RL
STTH3L06S
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Untitled
Abstract: No abstract text available
Text: STTH108 High voltage ultrafast rectifier Features • Low forward voltage drop ■ High reliability ■ High surge current capability ■ Soft switching for reduced EMI disturbances ■ Planar technology K Description The STTH108, which is using ST ultrafast high
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M25PE16
Abstract: M25PXX SO8 Wide Package SO8W STMicroelectronics date code PDIP8 TSSOP8 Package 160 SPI STM pdip8 SO8 package SO8 WIDE
Text: Serial EEPROM, Serial Flash and Application Specific Serial Non-Volatile Memories www.st.com/eeprom www.st.com/serialflash Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Serial Serial EEPROM, EEPROM, Serial Serial Flash Flash and
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SGEEFLASH/0902
M25PE16
M25PXX
SO8 Wide Package
SO8W
STMicroelectronics date code PDIP8
TSSOP8 Package
160 SPI STM
pdip8
SO8 package
SO8 WIDE
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MLP8 2x3mm
Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Text: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties
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SGEEFLASH/1204
MLP8 2x3mm
MLP8 m25p64
MARKING code mf stmicroelectronics
AN2043
SO8 NARROW
Part Marking STMicroelectronics flash memory
EEPROM 16Mb
M25P
stmicroelectronics eeprom
M25P16
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marking L6A
Abstract: AN1471 STTH2L06 STTH2L06A STTH2L06RL STTH2L06U
Text: STTH2L06 High efficiency ultrafast diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K Description DO-41 STTH2L06 The STTH2L06 is using ST Turbo 2 600 V planar
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STTH1L06
Abstract: AN1471 STTH1L06A STTH1L06RL STTH1L06U marking 8321
Text: STTH1L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Reduces switching and conduction losses ■ Low thermal resistance The STTH1L06/U/A, which is using ST Turbo 2 600 V technology, is specially suited as boost
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marking 8321
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AN1471
Abstract: STTH2R06 STTH2R06A STTH2R06RL STTH2R06S STTH2R06U Diode SMB marking code 14
Text: STTH2R06 High efficiency ultrafast diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K Description The STTH2R06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for
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Diode SMB marking code 14
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AN3057
Abstract: m24lr64 M24LR64-R schematic diagram of active rfid tag M24LR64R 8 channel RF Control Circuit RF basics AN1471 15693 rfid M24LR-64-R
Text: AN3057 Application note How to manage simultaneous I²C and RF data transfers with the M24LR64-R 1 Introduction The M24LR64-R is an EEPROM device designed to be accessed via two different interfaces: a wired I²C interface and a standard contactless ISO 15693 RFID interface.
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schematic diagram of active rfid tag
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8 channel RF Control Circuit
RF basics
AN1471
15693 rfid
M24LR-64-R
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AN1471
Abstract: STTH3L06 STTH3L06RL
Text: STTH3L06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V IR (max) 100 µA Tj (max) 175 °C VF (max) 1.05 V trr (max) 85 ns FEATURES AND BENEFITS • ■ ■ ■ Ultrafast switching Low reverse recovery current
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BYT01-400
Abstract: No abstract text available
Text: BYT01-400 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 400 V Tj (max) 150°C VF (max) 1.4 V trr (max) 25 ns ) s ( ct u d o r P e t e l o FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward & reverse recovery times
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Abstract: No abstract text available
Text: STTH4L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low forward voltage drop ■ Low leakage current platinum doping ■ High operating junction temperature A K A A K Description K The STTH4L06, which uses ST Turbo 2 600 V
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Abstract: No abstract text available
Text: STTH2L06 High efficiency ultrafast diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K Description DO-41 STTH2L06 The STTH2L06 is using ST Turbo 2 600 V planar
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Abstract: No abstract text available
Text: BYT01-400 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 400 V Tj (max) 150°C VF (max) 1.4 V trr (max) 25 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward & reverse recovery times
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BYT03-400
Abstract: No abstract text available
Text: BYT03-400 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 400 V Tj (max) 150°C VF (max) 1.4 V trr (max) 25 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward & reverse recovery times
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lm3489
Abstract: No abstract text available
Text: User's Guide SNVA160A – May 2006 – Revised April 2013 AN-1471 LM3489 Demonstration Board 1 Introduction The LM3489 is a high efficiency PFET switching regulator controller that can be used to quickly and easily develop a small, cost effective, switching buck regulator for a wide range of applications. The hysteretic
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AN2014
Abstract: stmicroelectronics eeprom AI-117 QNEE9801 stmicroelectronics serial eeproms
Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Introduction Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data.
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AN1471
Abstract: BYT01-400 BYT01-400RL
Text: BYT01-400 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 400 V Tj (max) 150°C VF (max) 1.4 V trr (max) 25 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward & reverse recovery times
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Abstract: STTH110 STTH110A STTH110RL STMicroelectronics H10 marking
Text: STTH110 High voltage ultrafast rectifier Features • Low forward voltage drop ■ High reliability ■ High surge current capability A ■ Soft switching for reduced EMI disturbances ■ Planar technology A K K Description The STTH110, which is using ST ultrafast high
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2n3773 power Amplifier circuit diagrams
Abstract: 10000 watt stabilizer transformer winding formula 2N3773 audio amplifier diagram lm380 equivalent LM566 "direct replacement" LM1820 LM1800 schematic diagram audio power amplifier using 2n3055 mc1349 GS 358S
Text: Volume 2 National P R E F A C E The second volum e o f N a tio n a l's Linear A p p lic a tio n s h a n d b o o k picks up w here V o lu m e I le ft o ff. Data sheets, a p p lic a tio n briefs and p e rtin e n t articles published in th e 3 years since V o lu m e I was p rin te d are
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