DIODE Z1 04 833 motorola
Abstract: MW4IC2020 SOT c5 87 MWIC930 david maurin ibsg AN1987 BC857ALT1 MHVIC915 MW4IC2230
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN1987/D SEMICONDUCTOR APPLICATION NOTE AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family INTRODUCTION THERMAL TRACKING CIRCUIT This application note introduces a bias control circuit that
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AN1987/D
AN1987
MHVIC915
MW4IC915,
MWIC930,
MW4IC2020,
MW4IC2230
MW5IC2030.
DIODE Z1 04 833 motorola
MW4IC2020
SOT c5 87
MWIC930
david maurin
ibsg
AN1987
BC857ALT1
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AN1987
Abstract: ibsg BC857ALT1 MHVIC915 MW4IC2020 MW4IC2230 MW4IC915 MWIC930 cdma study
Text: Freescale Semiconductor Application Note AN1987 Rev. 1, 5/2004 Quiescent Current Control for the RF Integrated Circuit Device Family By: James Seto INTRODUCTION THERMAL TRACKING CIRCUIT This application note introduces a bias control circuit that can be used with the Freescale family of RF integrated
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AN1987
MHVIC915
MW4IC915,
MWIC930,
MW4IC2020,
MW4IC2230
MW5IC2030.
AN1987
ibsg
BC857ALT1
MW4IC2020
MW4IC915
MWIC930
cdma study
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR
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MRFE6VP5300N
MRFE6VP5300NR1
MRFE6VP5300GNR1
MRFE6VP5300NR1
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ATC 1084
Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage
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MW7IC18100N
MW7IC18100N
MW7IC18100NR1
MW7IC18100GNR1
MW7IC18100NBR1
ATC 1084
MA3531
A114
A115
AN1977
AN1987
JESD22
MW7IC18100NBR1
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Rogers 4350B
Abstract: GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987
Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of
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MW5IC970NBR1
Rogers 4350B
GPS2020
ECJ4YF1H106Z
surface mounted fuse, moisture sensitivity level
4350B
A113
A114
A115
AN1955
AN1987
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Untitled
Abstract: No abstract text available
Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION
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MW4IC915
MW4IC915NBR1
MW4IC915MB/GMB
MW4IC915MBR1
MW4IC915GMBR1
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Untitled
Abstract: No abstract text available
Text: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage
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MW5IC2030N
MW5IC2030N
MW5IC2030NBR1
MW5IC2030GNBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage
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MW7IC2040N
MW7IC2040N
MW7IC2040NR1
MW7IC2040GNR1
MW7IC2040NBR1
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Untitled
Abstract: No abstract text available
Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-
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MW7IC915N
MW7IC915NT1
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage
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MD7IC2251N
MD7IC2251N
MD7IC2251NR1
MD7IC2251GNR1
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100B0R5BW
Abstract: MW4IC2020NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage
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MW4IC2020NBR1
MW4IC2020GNBR1
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MW4IC2020GMBR1
MW4IC2020
100B0R5BW
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage
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MW7IC2220N
MW7IC2220NR1
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MW7IC2220NBR1
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Murata grm40
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
MHVIC915R2
Murata grm40
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MW4IC2230NB
Abstract: j631 marking j130 J242
Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts
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MW4IC2230NBR1
MW4IC2230GNBR1
MW4IC2230MBR1
MW4IC2230GMBR1
MW4IC2230
MW4IC2230NB
j631
marking j130
J242
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MMG3014N
Abstract: No abstract text available
Text: Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking Freescale Semiconductor Technical Data Rev. 0, 5/2010 RF Reference Design Library MMG3014N Driving MW7IC2240N W- CDMA RF Power Amplifier Lineup
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MMG3014N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
28cers,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 0, 5/2005 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC
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MHV5IC2215NR2
MHV5IC2215N
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AN1977
Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
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MW6IC1940N--1
MW6IC1940GNB
MW6IC1940GNBR1
AN1977
AN1987
AN3263
J1213
MW6IC1940NBR1
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600S3R9BT
Abstract: GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 1, 5/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of
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600S3R9BT
GPS2020
4350B
A113
A114
A115
AN1955
AN1987
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage
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MW4IC915GMBR1
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MW4IC2020NBR1
Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR
Text: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MW4IC2020
MW4IC2020NBR1
MW4IC2020
MW4IC2020MBR1
MW4IC2020GMBR1
Marking Z7 Gate Driver
A113
AN1955
AN1977
AN1987
MW4IC2020GMBR1
MW4IC2020MBR
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A114
Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9160H
MRF6S9160HR3/HSR3
MRFE6S9160HR3/HSR3.
PCN12895
MRF6S9160HR3
MRF6S9160HSR3
A114
AN1955
JESD22
MRF6S9160H
MRF6S9160HSR3
atc100b220j
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CRCW08054701FKEA
Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage
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MWE6IC9100N
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MWE6IC9100GNR1
MWE6IC9100NBR1
CRCW08054701FKEA
ZO 607 MA
MWE6IC9100NBR1
A114
A115
AN1977
AN1987
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AN1977
Abstract: AN1987 GRM40 MHVIC915R2 020C Circuit Diagram Panasonic Model DIM 74
Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 4, 12/2004 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
MHVIC915R2
AN1977
AN1987
GRM40
020C
Circuit Diagram Panasonic Model DIM 74
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