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NXP Semiconductors MWE6IC9100NR1 IC RF AMP GSM 960MHZ TO270
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DigiKey	MWE6IC9100NR1	Reel			500	1 - 10 - 100 - 1000 $49.53312 10000 $49.53312	Buy Now
Rochester Electronics LLC MWE6IC9100NR1 IC AMP GSM 869MHZ-960MHZ TO270
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DigiKey	MWE6IC9100NR1	Bulk			5	1 - 10 $66.04 100 $66.04 1000 $66.04 10000 $66.04	Buy Now
Freescale Semiconductor MWE6IC9100NR1 Narrow Band High Power Amplifier, 869MHz Min, 960MHz Max
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Rochester Electronics	MWE6IC9100NR1		39		1	1 $63.5 10 $63.5 100 $59.69 1000 $53.98 10000 $53.98	Buy Now

MWE6IC9100NR1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MWE6IC9100NR1		Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers		Original	PDF

MWE6IC9100NR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CRCW08054701FKEA Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987 Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage	Original	PDF	MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987
J1220 Abstract: 100WpEp MWE6IC9100N Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 5, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage	Original	PDF	MWE6IC9100N--2 MWE6IC9100N MWE6IC9100GNR1 MWE6IC9100NBR1 J1220 100WpEp
Avago 9886 Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8	Original	PDF	com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 ARCHIVE INFORMATION The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base	Original	PDF	MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original	PDF
ATC100B331 Abstract: MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22 MWE6IC9100GNR1 MWE6IC9100N Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 2, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage	Original	PDF	MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 ATC100B331 MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22
ATC100B331JT200XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base	Original	PDF	MWE6IC9100N--1 MWE6IC9100N 40tors MWE6IC9100NR1 MWE6IC9100N--1 ATC100B331JT200XT
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 6, 10/2011 RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage	Original	PDF	MWE6IC9100N--2 MWE6IC9100N MWE6IC9100NBR1 MWE6IC9100N--2
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 0, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage	Original	PDF	MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
MWE6IC9100N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base	Original	PDF	MWE6IC9100N--1 MWE6IC9100N MWE6IC9100NR1 MWE6IC9100N--1