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    FLL120 Price and Stock

    SUMITOMO ELECTRIC Interconnect Products FLL120MK

    MESFET Transistor, N-CHAN, SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL120MK 1
    • 1 $76.05
    • 10 $76.05
    • 100 $76.05
    • 1000 $76.05
    • 10000 $76.05
    		Buy Now

    FUJITSU Semiconductor Limited FLL120MK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL120MK 300
    • 1 $557.1429
    • 10 $557.1429
    • 100 $557.1429
    • 1000 $557.1429
    • 10000 $557.1429
    		Buy Now

    FLL120 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL1200IU-2 Eudyna Devices TRANS JFET 15V 5IU Original PDF
    FLL1200IU-2 Fujitsu FET, P Channel, ID 72 A Original PDF
    FLL1200IU-2-E1 Fujitsu FET: P Channel: ID 72 A Original PDF
    FLL1200IU-3 Eudyna Devices L-Band High Power GaAs FET Original PDF
    FLL1200IU-3-E1 Fujitsu FET: P Channel: ID 48 A Original PDF
    FLL120MK Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL120MK-E1 Fujitsu FET: P Channel: ID 6 A Original PDF

    FLL120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLL120

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL120MK FLL120MK FCSI0598M200 FLL120

    FLL1200IU-2

    Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-2 FLL1200IU-2 FCSI0598M200 Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet

    FLL1200IU-3

    Abstract: No abstract text available
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 Powe4888

    FLL1200IU-2

    Abstract: fujitsu gaas fet L-band Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier fujitsu gaas fet
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-2 FLL1200IU-2 FCSI0598M200 fujitsu gaas fet L-band Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier fujitsu gaas fet

    L-Band

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL120MK FLL120MK L-Band

    fujitsu gaas fet

    Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-2 FLL1200IU-2 FCSI0598M200 fujitsu gaas fet Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier

    fll120mk

    Abstract: FLL120
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL120MK FLL120MK FLL120

    fll120mk

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL120MK FLL120MK FCSI0598M200

    FLL120MK

    Abstract: Eudyna Devices
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL120MK FLL120MK Eudyna Devices

    FLL1200IU-2

    Abstract: No abstract text available
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-2 FLL1200IU-2 t4888

    Eudyna Devices power amplifiers

    Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-2 FLL1200IU-2 t4888 Eudyna Devices power amplifiers eudyna GaAs FET Amplifier Eudyna high power

    FLL120

    Abstract: 288a FLL1200IU-2
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-2 FLL1200IU-2 the44 12-R0 FLL120 288a

    FLL120MK

    Abstract: FLL120 fujitsu gaas fet
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL120MK FLL120MK FCSI0598M200 FLL120 fujitsu gaas fet

    FLL120

    Abstract: No abstract text available
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200 FLL120

    Fujitsu GaAs FET Amplifier design

    Abstract: Fujitsu GaAs FET Amplifier FLL1200IU-3
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier

    FLL1200IU-3

    Abstract: fll120
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 Powe4888 fll120

    fujitsu power amplifier GHz

    Abstract: FLL1200IU-3
    Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200 fujitsu power amplifier GHz

    Untitled

    Abstract: No abstract text available
    Text: FLL1200IU-3 - L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation.


    OCR Scan     		PDF FLL1200IU-3 FLL1200IU-3 FCSI0299M200

    FLL120mk

    Abstract: No abstract text available
    Text: FLL120MK L-Bcuid Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING A m bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 37.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		PDF FLL120MK Volt939 FLL120mk

    FLL120MK

    Abstract: 100OB FLL120 fujitsu gaas fet
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 40.0dBm Typ. High Gain: = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120M K is a Power G aAs FET that is specifically designed to


    OCR Scan     		PDF FLL120MK FLL120MK FCSI0598M200 100OB FLL120 fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FI FLL12001U-2 *" L-Band Medium & High Power GaAs FETs . ^ FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. High PAE: 44%. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		PDF FLL12001U-2 FLL1200IU-2 FLL1200IU-2

    Untitled

    Abstract: No abstract text available
    Text: FLL1200IU-2A L-Band Medium & High Power GaAs FETs f u j Ît s u FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2A is a 120 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		PDF FLL1200IU-2A FLL1200IU-2A IMT-2000

    Untitled

    Abstract: No abstract text available
    Text: F L L120M K fU ÎIT S U L-Band Medium & High Power GaAs FETs * FEATURES • • • • • High Output Power: P-idg = 40.0dBm Typ. High Gain: G-j^B = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    OCR Scan     		PDF L120M FLL120MK 2200mA LL120M

    FLL1200IU-2

    Abstract: No abstract text available
    Text: FLL1200IU-2 - L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation.


    OCR Scan     		PDF FLL1200IU-2 FLL1200IU-2 FCSI0598M200