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    AO4407 Search Results

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    AO4407 Price and Stock

    Alpha & Omega Semiconductor AO4407A

    MOSFET P-CH 30V 12A 8SOIC
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    DigiKey AO4407A Cut Tape 59,037 1
    • 1 $1.09
    • 10 $0.679
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    AO4407A Digi-Reel 59,037 1
    • 1 $1.09
    • 10 $0.679
    • 100 $1.09
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    AO4407A Reel 57,000 3,000
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    Bristol Electronics AO4407A 155
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    AO4407A 60
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    Quest Components AO4407A 48
    • 1 $0.84
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    • 100 $0.378
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    TME AO4407A 5,433 1
    • 1 $0.723
    • 10 $0.258
    • 100 $0.186
    • 1000 $0.177
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    ComSIT USA AO4407A 3,895
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    Win Source Electronics AO4407A 150,300
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    Alpha & Omega Semiconductor AO4407

    MOSFET P-CH 30V 12A 8SOIC
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    DigiKey AO4407 Reel
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    Quest Components AO4407 2,738
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.84
    • 10000 $0.72
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    ComSIT USA AO4407 1,975
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    Alpha & Omega Semiconductor AO4407L

    MOSFET P-CH 30V 12A 8SO
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    Alpha & Omega Semiconductor AO4407B

    MOSFET P-CH 30V 12A 8SOIC
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    Alpha & Omega Semiconductor AO4407AL

    MOSFET P-CH 30V 12A 8SOIC
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    AO4407 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO4407 Alpha & Omega Semiconductor FET Transistor, P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4407 Alpha & Omega Semiconductor P-channel Enhancement Mode Field Effect Transistor Original PDF
    AO4407 Alpha & Omega Semiconductor Load Switch - 30V P-Channel MOSFET (Replacement AO4407A) Original PDF
    AO4407A Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4407A Alpha & Omega Semiconductor Load Switch - 30V P-Channel MOSFET Original PDF
    AO4407A_102 Alpha & Omega Semiconductor MOSFET P-CH 30V 12A 8SOIC Original PDF
    AO4407L Alpha & Omega Semiconductor MOSFET, P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4407L Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO4407 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM


    Original     		AO4407 AO4407/L AO4407 AO4407L -AO4407L PDF

    AO4407AL

    Abstract: No abstract text available
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A/L AO4407A AO4407AL -AO4407AL PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A/L AO4407A AO4407AL -AO4407AL PDF

    AO4407

    Abstract: mosfet ao4407
    Text: AO4407 30V P-Channel MOSFET General Description Product Summary The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		AO4407 AO4407 mosfet ao4407 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A PDF

    AO4407A

    Abstract: No abstract text available
    Text: AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A PDF

    AO4407

    Abstract: 13M60 AO4407L
    Text: Rev 3:Nov 2004 AO4407, AO4407L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable


    Original     		AO4407, AO4407L AO4407 AO4407L 13M60 PDF

    ao4407

    Abstract: No abstract text available
    Text: AO4407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM


    Original     		AO4407 AO4407/L AO4407 AO4407L -AO4407L PDF

    AO4407A

    Abstract: No abstract text available
    Text: AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407 AO4407 PDF

    AO4407

    Abstract: No abstract text available
    Text: AO4407 30V P-Channel MOSFET General Description Product Summary The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		AO4407 AO4407 PDF

    AO4407

    Abstract: TA 2076 AF AO4407L
    Text: AO4407 30V P-Channel MOSFET General Description Features The AO4407/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.AO4407 and AO4407L are electrically


    Original     		AO4407 AO4407/L AO4407 AO4407L -AO4407L TA 2076 AF PDF

    4407

    Abstract: TRANSISTOR 4407 4407 soic ALPHA SEMICONDUCTOR 4407 AO4407 AO4407L 4407 so8 AOS AO4407 4407 4407 so-8 4407 so 8
    Text: Rev 0:June 2002 Rev 1: Feb 2004 AO4407, AO4407L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable


    Original     		AO4407, AO4407L AO4407 AO4407L 4407 TRANSISTOR 4407 4407 soic ALPHA SEMICONDUCTOR 4407 4407 so8 AOS AO4407 4407 4407 so-8 4407 so 8 PDF

    AO4407A

    Abstract: AO4407AL AO4407
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A/L AO4407A AO4407AL -AO4407AL AO4407 PDF

    AO4407A

    Abstract: No abstract text available
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product


    Original     		AO4407A AO4407A PDF

    AO4407L

    Abstract: No abstract text available
    Text: AO4407L 30V P-Channel MOSFET General Description Features The AO4407L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407L AO4407L PDF

    AO4407A

    Abstract: AO4407
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product


    Original     		AO4407A AO4407A AO4407 PDF

    AO4407

    Abstract: AO4407L AO440
    Text: AO4407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407 AO4407 AO4407L AO440 PDF

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 PDF

    sk 8050 rf

    Abstract: smd diode 815b C8050 schottky C475 DIODE 2C101 m15 fah 001 8 24VDc R5C592 LTN154X1-L02 W83L950 BGA144F
    Text: SERVICE MANUAL FOR 8050 BY: Grass.Ren Repair Technology Research Department /EDVD Feb.2004 8050 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 1.1 Introduce ……………………………………………………………………………………………….


    Original     		855GME VT6307L IEEE1394 sk 8050 rf smd diode 815b C8050 schottky C475 DIODE 2C101 m15 fah 001 8 24VDc R5C592 LTN154X1-L02 W83L950 BGA144F PDF

    sl8z4

    Abstract: diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412
    Text: A B C D LWG2-D Block Diagram Discrete Mobile CPU CLK GEN. 4 IDT CV125PA Project code: 91.4Q801.001 PCB P/N : 55.4Q801.XXX REVISION : 06210-2 (Hannstar, ACCL) G792 Yonah 478 1.83G/2G/2.16G 4, 5 3 19 PCB STACKUP TOP TVO HOST BUS 400/533/667MHz LVDS DDR2 533/667MHz


    Original     		TPS51120 CV125PA 83G/2G/2 400/533/667MHz 4Q801 TPS51124 533/667MHz TPS51100 sl8z4 diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412 PDF

    pin configuration NPN transistor c828

    Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		875ule. 1000pF 200mils BCM5705M NO266 pin configuration NPN transistor c828 w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode PDF

    KB910

    Abstract: KB910 B4 edw10 la-2301 IXP150 AOS 3401 RC300ML af7 smd transistor smd transistor MP3 Y8 R833 VL28
    Text: 5 4 3 2 1 D D Compal Confidential C C Fortworth20 EDW10 Schematic Document Intel Protability Processor with ATi RC300ML + IXP150 2004-05-26 B B REV: 1.0 A A Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		Fortworth20 EDW10 RC300ML IXP150 LA-2301 KB910 KB910 B4 edw10 la-2301 IXP150 AOS 3401 RC300ML af7 smd transistor smd transistor MP3 Y8 R833 VL28 PDF

    8a320

    Abstract: TEESVB TEESVB21A VT1631 RM06FTN TEESVA1A 2R5TPE330M9 sanyo TEESVB21 CB1410QF smd transistor A7p
    Text: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : LM7WV 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : D C 4. Net name Description :


    Original     		VN800 VT8237R 8a320 TEESVB TEESVB21A VT1631 RM06FTN TEESVA1A 2R5TPE330M9 sanyo TEESVB21 CB1410QF smd transistor A7p PDF